Mohammad Hasanuzzaman

Follow

Person

Beacon, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gate stack for integrated circuit structure and method of forming same
- Patent number 9,748,235
- Issue date Aug 29, 2017
- GLOBALFOUNDRIES Inc.
- Aritra Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor fin with carbon dopant for diffusi...
- Patent number 9,685,334
- Issue date Jun 20, 2017
- GLOBALFOUNDRIES Inc.
- Yue Ke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of finFET junction
- Patent number 9,431,485
- Issue date Aug 30, 2016
- GLOBALFOUNDRIES, INC.
- Shafaat Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET extension regions
- Patent number 9,196,712
- Issue date Nov 24, 2015
- GLOBALFOUNDRIES Inc.
- Mohammad Hasanuzzaman
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
COALESCED FIN TO REDUCE FIN BENDING
- Publication number 20190019862
- Publication date Jan 17, 2019
- GLOBALFOUNDRIES INC.
- A K M Zahidur Rahim CHOWDHURY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK FOR INTEGRATED CIRCUIT STRUCTURE AND METHOD OF FORMING SAME
- Publication number 20170221889
- Publication date Aug 3, 2017
- GLOBALFOUNDRIES INC.
- Aritra Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF FINFET JUNCTION
- Publication number 20160181367
- Publication date Jun 23, 2016
- International Business Machines Corporation
- Shafaat Ahmed
- H01 - BASIC ELECTRIC ELEMENTS