Mona A. Ebrish

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Dielectric retention and method of forming memory pillar
- Patent number 11,569,442
- Issue date Jan 31, 2023
- International Business Machines Corporation
- Saba Zare
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for equal substrate to channel height between...
- Patent number 11,043,494
- Issue date Jun 22, 2021
- International Business Machines Corporation
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures of more uniform thickness
- Patent number 11,031,250
- Issue date Jun 8, 2021
- International Business Machines Corporation
- Mona A. Ebrish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor barrier for electrically isolating the substra...
- Patent number 10,818,751
- Issue date Oct 27, 2020
- International Business Machines Corporation
- Mona A. Ebrish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two step fin etch and reveal for VTFETs and high breakdown LDVTFETs
- Patent number 10,811,528
- Issue date Oct 20, 2020
- International Business Machines Corporation
- Mona Ebrish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High temperature ultra-fast annealed soft mask for semiconductor de...
- Patent number 10,804,106
- Issue date Oct 13, 2020
- International Business Machines Corporation
- Mona Ebrish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet substrate to source/drain isolation
- Patent number 10,734,523
- Issue date Aug 4, 2020
- International Business Machines Corporation
- Fee Li Lie
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Reducing series resistance between source and/or drain regions and...
- Patent number 10,388,789
- Issue date Aug 20, 2019
- International Business Machines Corporation
- Mona A. Ebrish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for equal substrate to channel height between...
- Patent number 10,381,348
- Issue date Aug 13, 2019
- International Business Machines Corporation
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transport FET with two or more gate lengths
- Patent number 10,361,127
- Issue date Jul 23, 2019
- International Business Machines Corporation
- Gauri Karve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High acceptor level doping in silicon germanium
- Patent number 10,361,306
- Issue date Jul 23, 2019
- International Business Machines Corporation
- Mona Abdulkhaleg Ebrish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing series resistance between source and/or drain regions and...
- Patent number 10,319,855
- Issue date Jun 11, 2019
- International Business Machines Corporation
- Mona A. Ebrish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Separate N and P fin etching for reduced CMOS device leakage
- Patent number 10,229,910
- Issue date Mar 12, 2019
- International Business Machines Corporation
- Isabel C. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High acceptor level doping in silicon germanium
- Patent number 9,799,736
- Issue date Oct 24, 2017
- International Business Machines Corporation
- Mona Abdulkhaleg Ebrish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Separate N and P fin etching for reduced CMOS device leakage
- Patent number 9,711,507
- Issue date Jul 18, 2017
- International Business Machines Corporation
- Isabel C. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contained punch through stopper for CMOS structures on a strain rel...
- Patent number 9,666,486
- Issue date May 30, 2017
- International Business Machines Corporation
- Mona A. Ebrish
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DIELECTRIC RETENTION AND METHOD OF FORMING MEMORY PILLAR
- Publication number 20210399212
- Publication date Dec 23, 2021
- International Business Machines Corporation
- Saba Zare
- G11 - INFORMATION STORAGE
Information Patent Application
NANOSHEET TRANSISTOR BARRIER FOR ELECTRICALLY ISOLATING THE SUBSTRA...
- Publication number 20200279913
- Publication date Sep 3, 2020
- International Business Machines Corporation
- Mona A. Ebrish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES OF MORE UNIFORM THICKNESS
- Publication number 20200176263
- Publication date Jun 4, 2020
- International Business Machines Corporation
- Mona A. Ebrish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET SUBSTRATE TO SOURCE/DRAIN ISOLATION
- Publication number 20200052107
- Publication date Feb 13, 2020
- International Business Machines Corporation
- Fee Li Lie
- B82 - NANO-TECHNOLOGY
Information Patent Application
STRUCTURE AND METHOD FOR EQUAL SUBSTRATE TO CHANNEL HEIGHT BETWEEN...
- Publication number 20190326289
- Publication date Oct 24, 2019
- International Business Machines Corporation
- Lawrence A. CLEVENGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Two Step Fin Etch and Reveal for VTFETs and High Breakdown LDVTFETs
- Publication number 20190296142
- Publication date Sep 26, 2019
- International Business Machines Corporation
- Mona Ebrish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH TEMPERATURE ULTRA-FAST ANNEALED SOFT MASK FOR SEMICONDUCTOR DE...
- Publication number 20190259616
- Publication date Aug 22, 2019
- International Business Machines Corporation
- Mona Ebrish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSPORT FET WITH TWO OR MORE GATE LENGTHS
- Publication number 20190206738
- Publication date Jul 4, 2019
- International Business Machines Corporation
- Gauri Karve
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING SERIES RESISTANCE BETWEEN SOURCE AND/OR DRAIN REGIONS AND...
- Publication number 20190097050
- Publication date Mar 28, 2019
- International Business Machines Corporation
- Mona A. Ebrish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING SERIES RESISTANCE BETWEEN SOURCE AND/OR DRAIN REGIONS AND...
- Publication number 20190097049
- Publication date Mar 28, 2019
- International Business Machines Corporation
- Mona A. Ebrish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR EQUAL SUBSTRATE TO CHANNEL HEIGHT BETWEEN...
- Publication number 20180197858
- Publication date Jul 12, 2018
- International Business Machines Corporation
- Lawrence A. CLEVENGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEPARATE N AND P FIN ETCHING FOR REDUCED CMOS DEVICE LEAKAGE
- Publication number 20180097002
- Publication date Apr 5, 2018
- International Business Machines Corporation
- Isabel C. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ACCEPTOR LEVEL DOPING IN SILICON GERMANIUM
- Publication number 20180026128
- Publication date Jan 25, 2018
- International Business Machines Corporation
- Mona Abdulkhaleg Ebrish
- H01 - BASIC ELECTRIC ELEMENTS

Mona A. Ebrish

Person

Patents Grantslast 30 patents

Dielectric retention and method of forming memory pillar

Structure and method for equal substrate to channel height between...

Semiconductor structures of more uniform thickness

Nanosheet transistor barrier for electrically isolating the substra...

Two step fin etch and reveal for VTFETs and high breakdown LDVTFETs

High temperature ultra-fast annealed soft mask for semiconductor de...

Nanosheet substrate to source/drain isolation

Reducing series resistance between source and/or drain regions and...

Structure and method for equal substrate to channel height between...

Vertical transport FET with two or more gate lengths

High acceptor level doping in silicon germanium

Reducing series resistance between source and/or drain regions and...

Separate N and P fin etching for reduced CMOS device leakage

High acceptor level doping in silicon germanium

Separate N and P fin etching for reduced CMOS device leakage

Contained punch through stopper for CMOS structures on a strain rel...

Patents Applicationslast 30 patents

DIELECTRIC RETENTION AND METHOD OF FORMING MEMORY PILLAR

NANOSHEET TRANSISTOR BARRIER FOR ELECTRICALLY ISOLATING THE SUBSTRA...

SEMICONDUCTOR STRUCTURES OF MORE UNIFORM THICKNESS

NANOSHEET SUBSTRATE TO SOURCE/DRAIN ISOLATION

STRUCTURE AND METHOD FOR EQUAL SUBSTRATE TO CHANNEL HEIGHT BETWEEN...

Two Step Fin Etch and Reveal for VTFETs and High Breakdown LDVTFETs

HIGH TEMPERATURE ULTRA-FAST ANNEALED SOFT MASK FOR SEMICONDUCTOR DE...

VERTICAL TRANSPORT FET WITH TWO OR MORE GATE LENGTHS

REDUCING SERIES RESISTANCE BETWEEN SOURCE AND/OR DRAIN REGIONS AND...

REDUCING SERIES RESISTANCE BETWEEN SOURCE AND/OR DRAIN REGIONS AND...

STRUCTURE AND METHOD FOR EQUAL SUBSTRATE TO CHANNEL HEIGHT BETWEEN...

SEPARATE N AND P FIN ETCHING FOR REDUCED CMOS DEVICE LEAKAGE

HIGH ACCEPTOR LEVEL DOPING IN SILICON GERMANIUM