Moritaka Nakamura

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Yokohama-shi, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating semiconductor device having low dielectric co...
- Patent number 6,790,766
- Issue date Sep 14, 2004
- Sanyo Electric Co., LTD
- Yoshikazu Yamaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for stripping a photo resist on an aluminum alloy
- Patent number 6,486,073
- Issue date Nov 26, 2002
- Fujitsu Limited
- Moritaka Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for stripping a photo resist on an aluminum alloy
- Patent number 6,184,148
- Issue date Feb 6, 2001
- Fujitsu Limited
- Moritaka Nakamura
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method of dry etching with hydrogen bromide or bromide
- Patent number 5,472,564
- Issue date Dec 5, 1995
- Fujitsu Limited
- Moritaka Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charged particle beam exposure apparatus and method of cleaning the...
- Patent number 5,401,974
- Issue date Mar 28, 1995
- Fujitsu Limited
- Yoshihisa Oae
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Dry etching with hydrogen bromide or bromine
- Patent number 5,316,616
- Issue date May 31, 1994
- Fujitsu Limited
- Moritaka Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of dry etching aluminum
- Patent number 4,798,650
- Issue date Jan 17, 1989
- Fujitsu Limited
- Moritaka Nakamura
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of fabricating semiconductor device having low dielectric co...
- Publication number 20030181067
- Publication date Sep 25, 2003
- SANYO ELECTRIC CO., LTD.
- Yoshikazu Yamaoka
- H01 - BASIC ELECTRIC ELEMENTS