Moriya Nakahara

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Kawasaki, JP

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Patents Grantslast 30 patents

Information Patent Grant
Manufacturing a wiring formed inside a semiconductor device
- Patent number 5,110,762
- Issue date May 5, 1992
- Kabushiki Kaisha Toshiba
- Moriya Nakahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing CMOS semiconductor device having decreased...
- Patent number 5,075,242
- Issue date Dec 24, 1991
- Kabushiki Kaisha Toshiba
- Moriya Nakahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional CMOS inverter
- Patent number 4,916,504
- Issue date Apr 10, 1990
- Kabushiki Kaisha Toshiba
- Moriya Nakahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device using amorphous sili...
- Patent number 4,697,333
- Issue date Oct 6, 1987
- Kabushiki Kaisha Toshiba
- Moriya Nakahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a field effect transistor
- Patent number 4,663,827
- Issue date May 12, 1987
- Kabushiki Kaisha Toshiba
- Moriya Nakahara
- H01 - BASIC ELECTRIC ELEMENTS