Motohisa Kado

Person

Susono, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for producing semiconductor element
- Patent number 11,152,225
- Issue date Oct 19, 2021
- Toyota Jidosha Kabushiki Kaisha
- Toshimasa Hara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC single crystal production method and production apparatus
- Patent number 10,968,535
- Issue date Apr 6, 2021
- Toyota Jidosha Kabushiki Kaisha
- Masayoshi Doi
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal production method and production apparatus
- Patent number 10,640,885
- Issue date May 5, 2020
- Toyota Jidosha Kabushiki Kaisha
- Masayoshi Doi
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal and method for producing same
- Patent number 10,450,671
- Issue date Oct 22, 2019
- Toyota Jidosha Kabushiki Kaisha
- Hironori Daikoku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for producing SiC single crystal and method for producing...
- Patent number 10,100,432
- Issue date Oct 16, 2018
- Toyota Jidosha Kabushiki Kaisha
- Nobuhiro Okada
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal production method and production apparatus
- Patent number 10,081,883
- Issue date Sep 25, 2018
- Toyota Jidosha Kabushiki Kaisha
- Motohisa Kado
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for producing SiC single crystals and method of producing...
- Patent number 9,896,778
- Issue date Feb 20, 2018
- Toyota Jidosha Kabushiki Kaisha
- Kazuhito Kamei
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for producing SiC single crystal by solution growth metho...
- Patent number 9,783,911
- Issue date Oct 10, 2017
- Toyota Jidosha Kabushiki Kaisha
- Nobuyoshi Yashiro
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production apparatus and production method of SiC single crystal
- Patent number 9,732,441
- Issue date Aug 15, 2017
- Nippon Steel & Sumitomo Metal Corporation
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a SiC single crystal in the presence of a magn...
- Patent number 9,708,734
- Issue date Jul 18, 2017
- Toyota Jidosha Kabushiki Kaisha
- Hironori Daikoku
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production apparatus of SiC single crystal by solution growth metho...
- Patent number 9,702,056
- Issue date Jul 11, 2017
- Nippon Steel & Sumitomo Metal Corporation
- Kazuhito Kamei
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal manufacturing method using alternating states of...
- Patent number 9,624,599
- Issue date Apr 18, 2017
- Toyota Jidosha Kabushiki Kaisha
- Motohisa Kado
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing apparatus of SiC single crystal and method for manufa...
- Patent number 9,617,655
- Issue date Apr 11, 2017
- Nippon Steel & Sumitomo Metal Corporation
- Nobuhiro Okada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing SiC single crystal
- Patent number 9,530,642
- Issue date Dec 27, 2016
- Toyota Jidosha Kabushiki Kaisha
- Motohisa Kado
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal ingot and production method therefor
- Patent number 9,523,156
- Issue date Dec 20, 2016
- Toyota Jidosha Kabushiki Kaisha
- Motohisa Kado
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing apparatus of SiC single crystal, jig for use in the m...
- Patent number 9,388,508
- Issue date Jul 12, 2016
- Toyota Jidosha Kabushiki Kaisha
- Kazuhito Kamei
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
EXHAUST GAS PURIFICATION CATALYST
- Publication number 20240024816
- Publication date Jan 25, 2024
- Toyota Jidosha Kabushiki Kaisha
- Toshimasa Hara
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
- Publication number 20210327722
- Publication date Oct 21, 2021
- Toyota Jidosha Kabushiki Kaisha
- Toshimasa HARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRODUCTION APPARATUS FOR GALLIUM OXIDE CRYSTAL, PRODUCTION METHOD F...
- Publication number 20200115817
- Publication date Apr 16, 2020
- Shinshu University
- Keigo HOSHIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL PRODUCTION METHOD AND PRODUCTION APPARATUS
- Publication number 20180312996
- Publication date Nov 1, 2018
- Toyota Jidosha Kabushiki Kaisha
- Masayoshi DOI
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL PRODUCTION METHOD AND PRODUCTION APPARATUS
- Publication number 20170198408
- Publication date Jul 13, 2017
- Toyota Jidosha Kabushiki Kaisha
- Motohisa KADO
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
- Publication number 20160237590
- Publication date Aug 18, 2016
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Hironori DAIKOKU
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR PRODUCING SiC SINGLE CRYSTALS AND METHOD OF PRODUCING...
- Publication number 20160122900
- Publication date May 5, 2016
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Kazuhito KAMEI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
- Publication number 20160053402
- Publication date Feb 25, 2016
- Kazuhiko KUSUNOKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SIC SINGLE CRYSTAL
- Publication number 20150299900
- Publication date Oct 22, 2015
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Hironori DAIKOKU
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL PRODUCTION APPARATUS, CRUCIBLE FOR USE THEREIN, AND...
- Publication number 20150225872
- Publication date Aug 13, 2015
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuhito Kamei
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC SINGLE CRYSTAL PRODUCTION APPARATUS AND METHOD OF PRODUCING SiC...
- Publication number 20150225871
- Publication date Aug 13, 2015
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SIC SINGLE CRYSTAL
- Publication number 20150221511
- Publication date Aug 6, 2015
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Motohisa Kado
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR PRODUCING SIC SINGLE CRYSTAL BY SOLUTION GROWTH METHO...
- Publication number 20150191848
- Publication date Jul 9, 2015
- Toyota Jidosha Kabushiki Kaisha
- Nobuyoshi Yashiro
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL INGOT AND PRODUCTION METHOD THEREFOR
- Publication number 20150167196
- Publication date Jun 18, 2015
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Motohisa Kado
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
- Publication number 20150075419
- Publication date Mar 19, 2015
- Toyota Jidosha Kabushiki Kaisha
- Motohisa Kado
- C30 - CRYSTAL GROWTH
Information Patent Application
SEED CRYSTAL HOLDING SHAFT FOR USE IN SINGLE CRYSTAL PRODUCTION DEV...
- Publication number 20150013590
- Publication date Jan 15, 2015
- Toyota Jidosha Kabushiki Kaisha
- Motohisa Kado
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL MANUFACTURING METHOD
- Publication number 20140245945
- Publication date Sep 4, 2014
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Motohisa Kado
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION APPARATUS AND PRODUCTION METHOD OF SiC SINGLE CRYSTAL
- Publication number 20140116324
- Publication date May 1, 2014
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION APPARATUS OF SiC SINGLE CRYSTAL BY SOLUTION GROWTH METHO...
- Publication number 20140116325
- Publication date May 1, 2014
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuhito Kamei
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING APPARATUS OF SiC SINGLE CRYSTAL, JIG FOR USE IN THE M...
- Publication number 20130305981
- Publication date Nov 21, 2013
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuhito Kamei
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING APPARATUS OF SiC SINGLE CRYSTAL AND METHOD FOR MANUFA...
- Publication number 20130284083
- Publication date Oct 31, 2013
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Nobuhiro Okada
- C30 - CRYSTAL GROWTH

Motohisa Kado

Person

Patents Grantslast 30 patents

Method for producing semiconductor element

SiC single crystal production method and production apparatus

SiC single crystal production method and production apparatus

SiC single crystal and method for producing same

Apparatus for producing SiC single crystal and method for producing...

SiC single crystal production method and production apparatus

Apparatus for producing SiC single crystals and method of producing...

Apparatus for producing SiC single crystal by solution growth metho...

Production apparatus and production method of SiC single crystal

Method for producing a SiC single crystal in the presence of a magn...

Production apparatus of SiC single crystal by solution growth metho...

SiC single crystal manufacturing method using alternating states of...

Manufacturing apparatus of SiC single crystal and method for manufa...

Method for producing SiC single crystal

SiC single crystal ingot and production method therefor

Manufacturing apparatus of SiC single crystal, jig for use in the m...

Patents Applicationslast 30 patents

EXHAUST GAS PURIFICATION CATALYST

METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT

PRODUCTION APPARATUS FOR GALLIUM OXIDE CRYSTAL, PRODUCTION METHOD F...

SIC SINGLE CRYSTAL PRODUCTION METHOD AND PRODUCTION APPARATUS

SIC SINGLE CRYSTAL PRODUCTION METHOD AND PRODUCTION APPARATUS

SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME

APPARATUS FOR PRODUCING SiC SINGLE CRYSTALS AND METHOD OF PRODUCING...

METHOD FOR PRODUCING SiC SINGLE CRYSTAL

METHOD FOR PRODUCING SIC SINGLE CRYSTAL

SINGLE CRYSTAL PRODUCTION APPARATUS, CRUCIBLE FOR USE THEREIN, AND...

SiC SINGLE CRYSTAL PRODUCTION APPARATUS AND METHOD OF PRODUCING SiC...

METHOD FOR PRODUCING SIC SINGLE CRYSTAL

APPARATUS FOR PRODUCING SIC SINGLE CRYSTAL BY SOLUTION GROWTH METHO...

SIC SINGLE CRYSTAL INGOT AND PRODUCTION METHOD THEREFOR

METHOD FOR PRODUCING SiC SINGLE CRYSTAL

SEED CRYSTAL HOLDING SHAFT FOR USE IN SINGLE CRYSTAL PRODUCTION DEV...

SIC SINGLE CRYSTAL MANUFACTURING METHOD

PRODUCTION APPARATUS AND PRODUCTION METHOD OF SiC SINGLE CRYSTAL

PRODUCTION APPARATUS OF SiC SINGLE CRYSTAL BY SOLUTION GROWTH METHO...

MANUFACTURING APPARATUS OF SiC SINGLE CRYSTAL, JIG FOR USE IN THE M...

MANUFACTURING APPARATUS OF SiC SINGLE CRYSTAL AND METHOD FOR MANUFA...