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Motoichi Murakami
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Akita-shi, JP
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last 30 patents
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Patent Grant
Method of producing GaAs single crystal and GaAs single crystal wafer
Patent number
9,469,916
Issue date
Oct 18, 2016
Dowa Electronics Materials Co., Ltd.
Ryoichi Nakamura
C30 - CRYSTAL GROWTH
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METHOD OF PRODUCING GAAS SINGLE CRYSTAL AND GAAS SINGLE CRYSTAL WAFER
Publication number
20140205527
Publication date
Jul 24, 2014
DOWA ELECTRONICS MATERIALS CO., LTD.
Ryoichi Nakamura
C30 - CRYSTAL GROWTH