Mousumi Bhat

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Singapore, SG

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Patents Grantslast 30 patents

Information Patent Grant
Dual step source/drain extension junction anneal to reduce the junc...
- Patent number 7,112,499
- Issue date Sep 26, 2006
- Chartered Semiconductor Manufacturing Ltd.
- Chyiu Hyia Poon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to lower work function of gate electrode through Ge implanta...
- Patent number 7,101,746
- Issue date Sep 5, 2006
- Chartered Semiconductor Manufacturing Ltd.
- Tze Ho Simon Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of multiple pulse laser annealing to activate ultra-shallow...
- Patent number 6,897,118
- Issue date May 24, 2005
- Chartered Semiconductor Manufacturing Ltd.
- Chyiu-Hyia Poon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to selectively form poly SiGe P type electrode and polysilic...
- Patent number 6,872,608
- Issue date Mar 29, 2005
- Chartered Semiconductor Manufacturing Ltd.
- Tze Ho Chan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method to selectively form SiGe P type electrode and polysilicon N...
- Publication number 20060205138
- Publication date Sep 14, 2006
- Chartered Semiconductor Manufacturing Ltd.
- Tze Ho Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual step source/drain extension junction anneal to reduce the junc...
- Publication number 20050158956
- Publication date Jul 21, 2005
- Chartered Semiconductor Manufacturing Ltd.
- Chyiu Hyia Poon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to lower work function of gate electrode through Ge implanta...
- Publication number 20050095773
- Publication date May 5, 2005
- Chartered Semiconductor Manufacturing Ltd.
- Tze Ho Simon Chan
- H01 - BASIC ELECTRIC ELEMENTS