Muhammad I. Chaudhry

Person

Colorado Springs, CO, US

People

Patents Grantslast 30 patents

Information Patent Grant
Low-voltage single-layer polysilicon EEPROM memory cell
- Patent number 7,408,812
- Issue date Aug 5, 2008
- Atmel Corporation
- Muhammad I. Chaudhry
- G11 - INFORMATION STORAGE
Information Patent Grant
Fabrication of an EEPROM cell with emitter-polysilicon source/drain...
- Patent number 7,256,445
- Issue date Aug 14, 2007
- Atmel Corporation
- Muhammad I. Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-cost, low-voltage single-layer polycrystalline EEPROM memory ce...
- Patent number 7,208,795
- Issue date Apr 24, 2007
- Atmel Corporation
- Damian A. Carver
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-voltage single-layer polysilicon eeprom memory cell
- Patent number 7,144,775
- Issue date Dec 5, 2006
- Atmel Corporation
- Muhammad I. Chaudhry
- G11 - INFORMATION STORAGE
Information Patent Grant
Fabrication of an EEPROM cell with SiGe source/drain regions
- Patent number 7,091,075
- Issue date Aug 15, 2006
- Atmel Corporation
- Muhammad I. Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of an EEPROM cell with emitter-polysilicon source/drain...
- Patent number 6,875,648
- Issue date Apr 5, 2005
- Atmel Corporation
- Muhammad I. Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LOW-VOLTAGE SINGLE-LAYER POLYSILICON EEPROM MEMORY CELL
- Publication number 20070133301
- Publication date Jun 14, 2007
- ATMEL CORPORATION
- Muhammad I. Chaudhry
- G11 - INFORMATION STORAGE
Information Patent Application
LOW-VOLTAGE SINGLE-LAYER POLYSILICON EEPROM MEMORY CELL
- Publication number 20070087550
- Publication date Apr 19, 2007
- ATMEL CORPORATION
- Muhammad I. Chaudhry
- G11 - INFORMATION STORAGE
Information Patent Application
Low-cost, low-voltage single-layer polycrystalline EEPROM memory ce...
- Publication number 20060267071
- Publication date Nov 30, 2006
- Damian A. Carver
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF AN EEPROM CELL WITH SiGe SOURCE/DRAIN REGIONS
- Publication number 20060244073
- Publication date Nov 2, 2006
- ATMEL CORPORATION
- Muhammad I. Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of an EEPROM cell with SiGe source/drain regions
- Publication number 20060008960
- Publication date Jan 12, 2006
- Muhammad I. Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of an EEPROM cell with emitter-polysilicon source/drain...
- Publication number 20060006475
- Publication date Jan 12, 2006
- Atmel Corporation
- Muhammad I. Chaudhry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-voltage single-layer polysilicon eeprom memory cell
- Publication number 20050258492
- Publication date Nov 24, 2005
- Muhammad I. Chaudhry
- G11 - INFORMATION STORAGE

Muhammad I. Chaudhry

Person

Patents Grantslast 30 patents

Low-voltage single-layer polysilicon EEPROM memory cell

Fabrication of an EEPROM cell with emitter-polysilicon source/drain...

Low-cost, low-voltage single-layer polycrystalline EEPROM memory ce...

Low-voltage single-layer polysilicon eeprom memory cell

Fabrication of an EEPROM cell with SiGe source/drain regions

Fabrication of an EEPROM cell with emitter-polysilicon source/drain...

Patents Applicationslast 30 patents

LOW-VOLTAGE SINGLE-LAYER POLYSILICON EEPROM MEMORY CELL

LOW-VOLTAGE SINGLE-LAYER POLYSILICON EEPROM MEMORY CELL

Low-cost, low-voltage single-layer polycrystalline EEPROM memory ce...

FABRICATION OF AN EEPROM CELL WITH SiGe SOURCE/DRAIN REGIONS

Fabrication of an EEPROM cell with SiGe source/drain regions

Fabrication of an EEPROM cell with emitter-polysilicon source/drain...

Low-voltage single-layer polysilicon eeprom memory cell