Muhammad Masuduzzaman

Person

Milpitas, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Low power multi-level cell (MLC) programming in non-volatile memory...
- Patent number 12,142,315
- Issue date Nov 12, 2024
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
High speed multi-level cell (MLC) programming in non-volatile memor...
- Patent number 12,112,800
- Issue date Oct 8, 2024
- SanDisk Technologies LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Bundle multiple timing parameters for fast SLC programming
- Patent number 12,079,496
- Issue date Sep 3, 2024
- SanDisk Technologies LLC
- Chin-Yi Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Neighbor aware multi-bias programming in scaled BICS
- Patent number 12,057,168
- Issue date Aug 6, 2024
- SanDisk Techn ologies LLC
- Muhammad Masuduzzaman
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory apparatus and method of operation using state dependent stro...
- Patent number 12,057,175
- Issue date Aug 6, 2024
- SanDisk Technologies LLC
- Chin-Yi Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Quick pass write programming techniques in a memory device
- Patent number 11,887,677
- Issue date Jan 30, 2024
- SanDisk Technologies LLC
- Muhammad Masuduzzaman
- G11 - INFORMATION STORAGE
Information Patent Grant
Bias for data retention in fuse ROM and flash memory
- Patent number 11,830,555
- Issue date Nov 28, 2023
- Western Digital Technologies, Inc.
- Muhammad Masuduzzaman
- G11 - INFORMATION STORAGE
Information Patent Grant
Pulsed bias for power-up or read recovery
- Patent number 11,776,634
- Issue date Oct 3, 2023
- Western Digital Technologies, Inc.
- Muhammad Masuduzzaman
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory apparatus and method of operation using periodic normal eras...
- Patent number 11,574,693
- Issue date Feb 7, 2023
- SanDisk Technologies LLC
- Chin-Yi Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Modified verify in a memory device
- Patent number 11,475,967
- Issue date Oct 18, 2022
- SanDisk Technologies LLC
- Xue Pitner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bi-directional sensing in a memory
- Patent number 11,423,993
- Issue date Aug 23, 2022
- SanDisk Technologies LLC
- Zhiping Zhang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Two-stage programming using variable step voltage (DVPGM) for non-v...
- Patent number 11,417,393
- Issue date Aug 16, 2022
- SanDisk Technologies LLC
- Sujjatul Islam
- G11 - INFORMATION STORAGE
Information Patent Grant
Enhanced multistate verify techniques in a memory device
- Patent number 11,322,213
- Issue date May 3, 2022
- SanDisk Technologies LLC
- Muhammad Masuduzzaman
- G11 - INFORMATION STORAGE
Information Patent Grant
Neighboring or logical minus word line dependent verify with sense...
- Patent number 11,139,038
- Issue date Oct 5, 2021
- SanDisk Technologies LLC
- Muhammad Masuduzzaman
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of concurrent multi-state programming of non-volatile memory...
- Patent number 11,081,184
- Issue date Aug 3, 2021
- SanDisk Technologies LLC
- Zhiping Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Temperature based programming in memory
- Patent number 10,984,876
- Issue date Apr 20, 2021
- SanDiskTechnologies LLC.
- Piyush Dak
- G11 - INFORMATION STORAGE
Information Patent Grant
Pulsed control line biasing in memory
- Patent number 10,217,520
- Issue date Feb 26, 2019
- SanDisk Technologies LLC
- Muhammad Masuduzzaman
- G11 - INFORMATION STORAGE
Information Patent Grant
Smart skip verify mode for programming a memory device
- Patent number 10,014,063
- Issue date Jul 3, 2018
- SanDisk Technologies LLC
- Huai-Yuan Tseng
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-state program using controlled weak boosting for non-volatile...
- Patent number 9,842,657
- Issue date Dec 12, 2017
- SanDisk Technologies LLC
- Deepanshu Dutta
- G11 - INFORMATION STORAGE
Information Patent Grant
Pulsed control line biasing in memory
- Patent number 9,779,832
- Issue date Oct 3, 2017
- SanDisk Technologies LLC
- Muhammad Masuduzzaman
- G11 - INFORMATION STORAGE
Information Patent Grant
Dynamic threshold voltage compaction for non-volatile memory
- Patent number 9,711,211
- Issue date Jul 18, 2017
- SanDisk Technologies LLC
- Muhammad Masuduzzaman
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
ACTIVE CURRENT CONSUMPTION SAVE MODE FOR NON-VOLATILE MEMORY USING...
- Publication number 20240296877
- Publication date Sep 5, 2024
- Western Digital Technologies, Inc.
- Ke Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
SINGLE-LEVEL CELL PUMP SKIP PROGRAM OPERATION PRELIMINARY PERIOD TI...
- Publication number 20240274200
- Publication date Aug 15, 2024
- SANDISK TECHNOLOGIES LLC
- Chin-Yi Chen
- G11 - INFORMATION STORAGE
Information Patent Application
BUNDLE MULTIPLE TIMING PARAMETERS FOR FAST SLC PROGRAMMING
- Publication number 20240078028
- Publication date Mar 7, 2024
- SANDISK TECHNOLOGIES LLC
- Chin-Yi Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
HYBRID SMART VERIFY FOR QLC/TLC DIE
- Publication number 20240071524
- Publication date Feb 29, 2024
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
LOW POWER MULTI-LEVEL CELL (MLC) PROGRAMMING IN NON-VOLATILE MEMORY...
- Publication number 20230386569
- Publication date Nov 30, 2023
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH SPEED MULTI-LEVEL CELL (MLC) PROGRAMMING IN NON-VOLATILE MEMOR...
- Publication number 20230386568
- Publication date Nov 30, 2023
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY APPARATUS AND METHOD OF OPERATION USING STATE DEPENDENT STRO...
- Publication number 20230326530
- Publication date Oct 12, 2023
- SANDISK TECHNOLOGIES LLC
- Chin-Yi Chen
- G11 - INFORMATION STORAGE
Information Patent Application
QUICK PASS WRITE PROGRAMMING TECHNIQUES IN A MEMORY DEVICE
- Publication number 20230307072
- Publication date Sep 28, 2023
- SANDISK TECHNOLOGIES LLC
- Muhammad Masuduzzaman
- G11 - INFORMATION STORAGE
Information Patent Application
Data Retention-Specific Refresh Read
- Publication number 20220413761
- Publication date Dec 29, 2022
- Western Digital Technologies, Inc.
- Muhammad MASUDUZZAMAN
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Bias for Data Retention in Fuse ROM and Flash Memory
- Publication number 20220415402
- Publication date Dec 29, 2022
- Western Digital Technologies, Inc.
- Muhammad MASUDUZZAMAN
- G11 - INFORMATION STORAGE
Information Patent Application
Pulsed Bias for Power-Up or Read Recovery
- Publication number 20220415406
- Publication date Dec 29, 2022
- Western Digital Technologies, Inc.
- Muhammad MASUDUZZAMAN
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY APPARATUS AND METHOD OF OPERATION USING PERIODIC NORMAL ERAS...
- Publication number 20220399066
- Publication date Dec 15, 2022
- SANDISK TECHNOLOGIES LLC
- Chin-Yi Chen
- G11 - INFORMATION STORAGE
Information Patent Application
MODIFIED VERIFY IN A MEMORY DEVICE
- Publication number 20220359024
- Publication date Nov 10, 2022
- SANDISK TECHNOLOGIES LLC
- Xue Pitner
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-STAGE PROGRAMMING USING VARIABLE STEP VOLTAGE (DVPGM) FOR NON-V...
- Publication number 20220215873
- Publication date Jul 7, 2022
- SANDISK TECHNOLOGIES LLC
- Sujjatul Islam
- G11 - INFORMATION STORAGE
Information Patent Application
NEIGHBOR AWARE MULTI-BIAS PROGRAMMING IN SCALED BICS
- Publication number 20210391012
- Publication date Dec 16, 2021
- SANDISK TECHNOLOGIES LLC
- Muhammad Masuduzzaman
- G11 - INFORMATION STORAGE
Information Patent Application
ENHANCED MULTISTATE VERIFY TECHNIQUES IN A MEMORY DEVICE
- Publication number 20210391025
- Publication date Dec 16, 2021
- San Disk Technologies LLC
- Muhammad Masuduzzaman
- G11 - INFORMATION STORAGE
Information Patent Application
BI-DIRECTIONAL SENSING IN A MEMORY
- Publication number 20210134372
- Publication date May 6, 2021
- SANDISK TECHNOLOGIES LLC
- Zhiping Zhang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD OF CONCURRENT MULTI-STATE PROGRAMMING OF NON-VOLATILE MEMORY...
- Publication number 20210134370
- Publication date May 6, 2021
- SANDISK TECHNOLOGIES LLC
- Zhiping Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR CONCURRENT PROGRAMMING
- Publication number 20210134369
- Publication date May 6, 2021
- SANDISK TECHNOLOGIES LLC
- Zhiping Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
TEMPERATURE BASED PROGRAMMING IN MEMORY
- Publication number 20200402594
- Publication date Dec 24, 2020
- SANDISK TECHNOLOGIES LLC
- Piyush Dak
- G11 - INFORMATION STORAGE
Information Patent Application
Pulsed Control Line Biasing In Memory
- Publication number 20180158531
- Publication date Jun 7, 2018
- SanDisk Technologies LLC
- Muhammad Masuduzzaman
- G11 - INFORMATION STORAGE
Information Patent Application
Smart Skip Verify Mode For Programming A Memory Device
- Publication number 20170125117
- Publication date May 4, 2017
- SANDISK TECHNOLOGIES INC.
- Huai-Yuan Tseng
- G11 - INFORMATION STORAGE
Information Patent Application
DYNAMIC THRESHOLD VOLTAGE COMPACTION FOR NON-VOLATILE MEMORY
- Publication number 20170125087
- Publication date May 4, 2017
- SANDISK TECHNOLOGIES INC.
- Muhammad Masuduzzaman
- G11 - INFORMATION STORAGE

Muhammad Masuduzzaman

Person

Patents Grantslast 30 patents

Low power multi-level cell (MLC) programming in non-volatile memory...

High speed multi-level cell (MLC) programming in non-volatile memor...

Bundle multiple timing parameters for fast SLC programming

Neighbor aware multi-bias programming in scaled BICS

Memory apparatus and method of operation using state dependent stro...

Quick pass write programming techniques in a memory device

Bias for data retention in fuse ROM and flash memory

Pulsed bias for power-up or read recovery

Memory apparatus and method of operation using periodic normal eras...

Modified verify in a memory device

Bi-directional sensing in a memory

Two-stage programming using variable step voltage (DVPGM) for non-v...

Enhanced multistate verify techniques in a memory device

Neighboring or logical minus word line dependent verify with sense...

Method of concurrent multi-state programming of non-volatile memory...

Temperature based programming in memory

Pulsed control line biasing in memory

Smart skip verify mode for programming a memory device

Multi-state program using controlled weak boosting for non-volatile...

Pulsed control line biasing in memory

Dynamic threshold voltage compaction for non-volatile memory

Patents Applicationslast 30 patents

ACTIVE CURRENT CONSUMPTION SAVE MODE FOR NON-VOLATILE MEMORY USING...

SINGLE-LEVEL CELL PUMP SKIP PROGRAM OPERATION PRELIMINARY PERIOD TI...

BUNDLE MULTIPLE TIMING PARAMETERS FOR FAST SLC PROGRAMMING

HYBRID SMART VERIFY FOR QLC/TLC DIE

LOW POWER MULTI-LEVEL CELL (MLC) PROGRAMMING IN NON-VOLATILE MEMORY...

HIGH SPEED MULTI-LEVEL CELL (MLC) PROGRAMMING IN NON-VOLATILE MEMOR...

MEMORY APPARATUS AND METHOD OF OPERATION USING STATE DEPENDENT STRO...

QUICK PASS WRITE PROGRAMMING TECHNIQUES IN A MEMORY DEVICE

Data Retention-Specific Refresh Read

Bias for Data Retention in Fuse ROM and Flash Memory

Pulsed Bias for Power-Up or Read Recovery

MEMORY APPARATUS AND METHOD OF OPERATION USING PERIODIC NORMAL ERAS...

MODIFIED VERIFY IN A MEMORY DEVICE

TWO-STAGE PROGRAMMING USING VARIABLE STEP VOLTAGE (DVPGM) FOR NON-V...

NEIGHBOR AWARE MULTI-BIAS PROGRAMMING IN SCALED BICS

ENHANCED MULTISTATE VERIFY TECHNIQUES IN A MEMORY DEVICE

BI-DIRECTIONAL SENSING IN A MEMORY

METHOD OF CONCURRENT MULTI-STATE PROGRAMMING OF NON-VOLATILE MEMORY...

METHOD FOR CONCURRENT PROGRAMMING

TEMPERATURE BASED PROGRAMMING IN MEMORY

Pulsed Control Line Biasing In Memory

Smart Skip Verify Mode For Programming A Memory Device

DYNAMIC THRESHOLD VOLTAGE COMPACTION FOR NON-VOLATILE MEMORY