Munehisa Yanagisawa

Person

Gunma, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for growth of a nitrogen-doped gallium phosphide epitaxial l...
- Patent number 5,985,023
- Issue date Nov 16, 1999
- Shin-Etsu Handotai Co., Ltd.
- Susumu Higuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a gap type semiconductor substrate of red li...
- Patent number 5,851,850
- Issue date Dec 22, 1998
- Shin-Etsu Handotai Co., Ltd.
- Munehisa Yanagisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Liquid phase epitaxial
- Patent number 5,759,267
- Issue date Jun 2, 1998
- Shin-Etsu Handotai Co., Ltd.
- Munehisa Yanagisawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for the determination of nitrogen concentration in compound...
- Patent number 5,731,209
- Issue date Mar 24, 1998
- Shin-Etsu Handotai Co., Ltd.
- Masato Yamada
- G01 - MEASURING TESTING
Information Patent Grant
GaP light emitting substrate and a method of manufacturing it
- Patent number 5,643,827
- Issue date Jul 1, 1997
- Shin-Etsu Handotai Kabushiki Kaisha
- Toshio Ootaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for measuring surface shape
- Patent number 5,636,023
- Issue date Jun 3, 1997
- Shin-Etsu Handotai Co.
- Munehisa Yanagisawa
- G01 - MEASURING TESTING
Information Patent Grant
Liquid phase epitaxial growth method for carrying out the same
- Patent number 5,603,761
- Issue date Feb 18, 1997
- Shin-Etsu Handotai Co., Ltd.
- Munehisa Yanagisawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a gallium phosphide epitaxial wafer
- Patent number 5,571,321
- Issue date Nov 5, 1996
- Shin-Etsu Handotai Co., Ltd.
- Munehisa Yanagisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gap light emitting device having a low carbon content in the substrate
- Patent number 5,514,881
- Issue date May 7, 1996
- Shin-Etsu Handotai Co., Ltd.
- Munehisa Yanagisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for control of Si concentration in gallium phosphide single...
- Patent number 5,500,390
- Issue date Mar 19, 1996
- Shin-Etsu Handatoi Co., Ltd.
- Munehisa Yanagisawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making gap red light emitting element substrate by LPE
- Patent number 5,407,858
- Issue date Apr 18, 1995
- Shin-Etsu Handotai Co. Ltd.
- Munehisa Yanagisawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaP light emitting element substrate with oxygen doped buffer
- Patent number 5,349,208
- Issue date Sep 20, 1994
- Shin-Etsu Handotai Kabushiki Kaisha
- Munehisa Yanagisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gap red light emitting diode
- Patent number 5,300,792
- Issue date Apr 5, 1994
- Shin-Etsu Handotai Co., Ltd.
- Munehisa Yanagisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Liquid-phase growth process of compound semiconductor
- Patent number 5,234,534
- Issue date Aug 10, 1993
- Shin-Etsu Handotai Co., Ltd.
- Munehisa Yanagisawa
- C30 - CRYSTAL GROWTH

Munehisa Yanagisawa

Person

Patents Grantslast 30 patents

Method for growth of a nitrogen-doped gallium phosphide epitaxial l...

Method for fabricating a gap type semiconductor substrate of red li...

Liquid phase epitaxial

Method for the determination of nitrogen concentration in compound...

GaP light emitting substrate and a method of manufacturing it

Apparatus for measuring surface shape

Liquid phase epitaxial growth method for carrying out the same

Method for producing a gallium phosphide epitaxial wafer

Gap light emitting device having a low carbon content in the substrate

Method for control of Si concentration in gallium phosphide single...

Method of making gap red light emitting element substrate by LPE

GaP light emitting element substrate with oxygen doped buffer

Gap red light emitting diode

Liquid-phase growth process of compound semiconductor