Munir D. Naeem

Person

Poughkeesie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Embedded DRAM memory cell with additional patterning layer for impr...
- Patent number 8,772,850
- Issue date Jul 8, 2014
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced capacitance trench capacitor
- Patent number 8,492,821
- Issue date Jul 23, 2013
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded DRAM memory cell with additional patterning layer for impr...
- Patent number 8,426,268
- Issue date Apr 23, 2013
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming enhanced capacitance trench capacitor
- Patent number 8,227,311
- Issue date Jul 24, 2012
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation structure compatible with SOI embedded DRAM
- Patent number 8,003,488
- Issue date Aug 23, 2011
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for non-selective shallow trench isolation reactive ion etch...
- Patent number 7,871,893
- Issue date Jan 18, 2011
- International Business Machines Corporation
- Gregory Costrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Poly filled substrate contact on SOI structure
- Patent number 7,592,245
- Issue date Sep 22, 2009
- International Business Machines Corporation
- David M. Dobuzinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Subground rule STI fill for hot structure
- Patent number 7,393,738
- Issue date Jul 1, 2008
- International Business Machines Corporation
- Byeong Y Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Poly filled substrate contact on SOI structure
- Patent number 7,358,172
- Issue date Apr 15, 2008
- International Business Machines Corporation
- David M. Dobuzinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
STI formation for vertical and planar transistors
- Patent number 6,893,938
- Issue date May 17, 2005
- Infineon Technologies AG
- Munir D. Naeem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced cap layer erosion for borderless contacts
- Patent number 6,890,815
- Issue date May 10, 2005
- Infineon Technologies AG
- Johnathan Faltermeier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for dry etching deep trenches in a substrate
- Patent number 6,821,900
- Issue date Nov 23, 2004
- Infineon Technologies AG
- Satish Athavale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polycrystalline material with surface features projecting from a su...
- Patent number 6,733,602
- Issue date May 11, 2004
- Internation Business Machines Corporation
- Munir D. Naeem
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Method of forming a self aligned trench in a semiconductor using a...
- Patent number 6,566,219
- Issue date May 20, 2003
- Infineon Technologies AG
- Gerhard Kunkel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preventing bridging between polycrystalline micro-scale f...
- Patent number 6,555,204
- Issue date Apr 29, 2003
- International Business Machines Corporation
- Munir D. Naeem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for etching tungsten stack structures
- Patent number 6,551,942
- Issue date Apr 22, 2003
- International Business Machines Corporation
- Munir D. Naeem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of deep trench formation with improved profile control and s...
- Patent number 6,544,838
- Issue date Apr 8, 2003
- Infineon Technologies AG
- Rajiv Ranade
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming extruded structures from polycrystalline material...
- Patent number 6,464,806
- Issue date Oct 15, 2002
- International Business Machines Corporation
- Munir D. Naeem
- B21 - MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL PUNCHING...
Information Patent Grant
Method of forming nano-scale structures from polycrystalline materi...
- Patent number 6,359,325
- Issue date Mar 19, 2002
- International Business Machines Corporation
- Munir D. Naeem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing RIE lag for deep trench silicon etching
- Patent number 6,284,666
- Issue date Sep 4, 2001
- International Business Machines Corporation
- Munir D. Naeem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microscope specimen holder and grid arrangement for in-situ and ex-...
- Patent number 6,002,136
- Issue date Dec 14, 1999
- International Business Machines Corporation
- Munir D. Naeem
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Low pressure and low power C1.sub.2 /HC1 process for sub-micron met...
- Patent number 5,976,986
- Issue date Nov 2, 1999
- International Business Machines Corp.
- Munir D. Naeem
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for metal etching with reduced sidewall build up during int...
- Patent number 5,846,884
- Issue date Dec 8, 1998
- Siemens Aktiengesellschaft
- Munir D. Naeem
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
EMBEDDED DRAM MEMORY CELL WITH ADDITIONAL PATTERNING LAYER FOR IMPR...
- Publication number 20130228840
- Publication date Sep 5, 2013
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED CAPACITANCE TRENCH CAPACITOR
- Publication number 20120187465
- Publication date Jul 26, 2012
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING ENHANCED CAPACITANCE TRENCH CAPACITOR
- Publication number 20120086064
- Publication date Apr 12, 2012
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED DRAM MEMORY CELL WITH ADDITIONAL PATTERNING LAYER FOR IMPR...
- Publication number 20100193852
- Publication date Aug 5, 2010
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR NON-SELECTIVE SHALLOW TRENCH ISOLATION REACTIVE ION ETCH...
- Publication number 20090189242
- Publication date Jul 30, 2009
- International Business Machines Corporation
- Gregory Costrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING NESTED AND ISOLATED LINES IN SEMICONDUCTOR DEVICES
- Publication number 20090104776
- Publication date Apr 23, 2009
- International Business Machines Corporation
- David M. Dobuzinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION STRUCTURE COMPATIBLE WITH SOI EMBEDDED DRAM
- Publication number 20090079027
- Publication date Mar 26, 2009
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ETCHING METHODS
- Publication number 20090047791
- Publication date Feb 19, 2009
- International Business Machines Corporation
- David M. Dobuzinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBGROUND RULE STI FILL FOR HOT STRUCTURE
- Publication number 20080224255
- Publication date Sep 18, 2008
- International Business Machines Corporation
- Byeong Y. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBGROUND RULE STI FILL FOR HOT STRUCTURE
- Publication number 20080169528
- Publication date Jul 17, 2008
- International Business Machines Corporation
- Byeong Y. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLY FILLED SUBSTRATE CONTACT ON SOI STRUCTURE
- Publication number 20080113507
- Publication date May 15, 2008
- International Business Machines Corporation
- David M. Dobuzinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLY FILLED SUBSTRATE CONTACT ON SOI STRUCTURE
- Publication number 20070196963
- Publication date Aug 23, 2007
- International Business Machines Corporation
- David M. Dobuzinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED CAP LAYER EROSION FOR BORDERLESS CONTACTS
- Publication number 20050051839
- Publication date Mar 10, 2005
- Johnathan Faltermeier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STI formation for vertical and planar transistors
- Publication number 20040209486
- Publication date Oct 21, 2004
- Munir D. Naeem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for etching tungsten stack structures
- Publication number 20020190025
- Publication date Dec 19, 2002
- International Business Machines Corporation
- Munir D. Naeem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming extruded structures from polycrystalline material...
- Publication number 20020179201
- Publication date Dec 5, 2002
- Munir D. Naeem
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
Method of deep trench formation with improved profile control and s...
- Publication number 20020132422
- Publication date Sep 19, 2002
- Infineon Technologies North America Corp.
- Rajiv Ranade
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for dry etching deep trenches in a substrate
- Publication number 20020094690
- Publication date Jul 18, 2002
- Satish Athavale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self aligned trench and method of forming the same
- Publication number 20020068400
- Publication date Jun 6, 2002
- Infineon Technologies North America Corp.
- Gerhard Kunkel
- H01 - BASIC ELECTRIC ELEMENTS

Munir D. Naeem

Person

Patents Grantslast 30 patents

Embedded DRAM memory cell with additional patterning layer for impr...

Enhanced capacitance trench capacitor

Embedded DRAM memory cell with additional patterning layer for impr...

Method of forming enhanced capacitance trench capacitor

Shallow trench isolation structure compatible with SOI embedded DRAM

Method for non-selective shallow trench isolation reactive ion etch...

Poly filled substrate contact on SOI structure

Subground rule STI fill for hot structure

Poly filled substrate contact on SOI structure

STI formation for vertical and planar transistors

Reduced cap layer erosion for borderless contacts

Method for dry etching deep trenches in a substrate

Polycrystalline material with surface features projecting from a su...

Method of forming a self aligned trench in a semiconductor using a...

Method of preventing bridging between polycrystalline micro-scale f...

Methods for etching tungsten stack structures

Method of deep trench formation with improved profile control and s...

Method of forming extruded structures from polycrystalline material...

Method of forming nano-scale structures from polycrystalline materi...

Method of reducing RIE lag for deep trench silicon etching

Microscope specimen holder and grid arrangement for in-situ and ex-...

Low pressure and low power C1.sub.2 /HC1 process for sub-micron met...

Methods for metal etching with reduced sidewall build up during int...

Patents Applicationslast 30 patents

EMBEDDED DRAM MEMORY CELL WITH ADDITIONAL PATTERNING LAYER FOR IMPR...

ENHANCED CAPACITANCE TRENCH CAPACITOR

METHOD OF FORMING ENHANCED CAPACITANCE TRENCH CAPACITOR

EMBEDDED DRAM MEMORY CELL WITH ADDITIONAL PATTERNING LAYER FOR IMPR...

METHOD FOR NON-SELECTIVE SHALLOW TRENCH ISOLATION REACTIVE ION ETCH...

METHODS FOR FORMING NESTED AND ISOLATED LINES IN SEMICONDUCTOR DEVICES

SHALLOW TRENCH ISOLATION STRUCTURE COMPATIBLE WITH SOI EMBEDDED DRAM

SEMICONDUCTOR ETCHING METHODS

SUBGROUND RULE STI FILL FOR HOT STRUCTURE

SUBGROUND RULE STI FILL FOR HOT STRUCTURE

POLY FILLED SUBSTRATE CONTACT ON SOI STRUCTURE

POLY FILLED SUBSTRATE CONTACT ON SOI STRUCTURE

REDUCED CAP LAYER EROSION FOR BORDERLESS CONTACTS

STI formation for vertical and planar transistors

Methods for etching tungsten stack structures

Method of forming extruded structures from polycrystalline material...

Method of deep trench formation with improved profile control and s...

Method for dry etching deep trenches in a substrate

Self aligned trench and method of forming the same