Murshed M. Chowdhury

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional memory device having on-pitch drain select gate e...
- Patent number 11,552,094
- Issue date Jan 10, 2023
- SanDisk Technologies LLC
- James Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonded three-dimensional memory devices and methods of making the s...
- Patent number 11,195,857
- Issue date Dec 7, 2021
- SanDisk Technologies LLC
- James Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for removing a bulk substrate from a bonded assembly of wafers
- Patent number 11,127,729
- Issue date Sep 21, 2021
- SanDisk Technologies LLC
- James Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing alternating stack of sou...
- Patent number 11,018,153
- Issue date May 25, 2021
- SanDisk Technologies LLC
- James Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional device with bonded structures including a support...
- Patent number 10,985,169
- Issue date Apr 20, 2021
- SanDisk Technologies LLC
- James Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing alternating stack of sou...
- Patent number 10,950,626
- Issue date Mar 16, 2021
- SanDisk Technologies LLC
- James Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through-array conductive via structures for a three-dimensional mem...
- Patent number 10,840,260
- Issue date Nov 17, 2020
- SanDisk Technologies LLC
- James Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-tier three-dimensional memory devices containing annular diel...
- Patent number 10,777,570
- Issue date Sep 15, 2020
- SanDisk Technologies LLC
- Tadashi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing bond pad-based power sup...
- Patent number 10,748,894
- Issue date Aug 18, 2020
- SanDisk Technologies LLC
- Murshed Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for removing a bulk substrate from a bonded assembly of wafers
- Patent number 10,727,216
- Issue date Jul 28, 2020
- SanDisk Technologies LLC
- James Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel region dopant control in fin field effect transistor
- Patent number 10,672,907
- Issue date Jun 2, 2020
- International Business Machines Corporation
- Murshed M. Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonded three-dimensional memory devices and methods of making the s...
- Patent number 10,629,616
- Issue date Apr 21, 2020
- SanDisk Technologies LLC
- James Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing hydrogen diffusion block...
- Patent number 10,515,897
- Issue date Dec 24, 2019
- SanDisk Technologies LLC
- Masatoshi Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device and method of making the same using...
- Patent number 10,490,569
- Issue date Nov 26, 2019
- SanDisk Technologies LLC
- Mitsuteru Mushiga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with self-aligned drain side select...
- Patent number 10,490,568
- Issue date Nov 26, 2019
- SanDisk Technologies LLC
- James Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with thickened word lines in terrac...
- Patent number 10,461,163
- Issue date Oct 29, 2019
- SanDisk Technologies LLC
- Senaka Krishna Kanakamedala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with thickened word lines in terrac...
- Patent number 10,453,854
- Issue date Oct 22, 2019
- SanDisk Technologies LLC
- Yoshihiro Kanno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Concurrent formation of memory openings and contact openings for a...
- Patent number 10,388,666
- Issue date Aug 20, 2019
- SanDisk Technologies LLC
- James Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Concurrent formation of memory openings and contact openings for a...
- Patent number 10,355,009
- Issue date Jul 16, 2019
- SanDisk Technologies LLC
- James Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional array device having a metal containing barrier an...
- Patent number 10,262,945
- Issue date Apr 16, 2019
- SanDisk Technologies LLC
- Raghuveer S. Makala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage field effect transistor with laterally extended gate d...
- Patent number 10,224,407
- Issue date Mar 5, 2019
- SanDisk Technologies LLC
- Murshed Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional NAND memory device with common bit line for multi...
- Patent number 10,224,104
- Issue date Mar 5, 2019
- SanDisk Technologies LLC
- Murshed Chowdhury
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device having epitaxial germanium-containi...
- Patent number 10,121,794
- Issue date Nov 6, 2018
- SanDisk Technologies LLC
- Marika Gunji-Yoneoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and IC structure for increasing pitch between gates
- Patent number 9,991,167
- Issue date Jun 5, 2018
- GLOBALFOUNDRIES Inc.
- Arvind Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-tier three-dimensional memory devices containing annular diel...
- Patent number 9,991,280
- Issue date Jun 5, 2018
- SanDisk Technologies LLC
- Tadashi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with self-aligned drain side select...
- Patent number 9,972,640
- Issue date May 15, 2018
- SanDisk Technologies LLC
- James Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device having a multilevel drain select ga...
- Patent number 9,972,641
- Issue date May 15, 2018
- SanDisk Technologies LLC
- Yanli Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack for integrated circuit structure and method of forming same
- Patent number 9,748,235
- Issue date Aug 29, 2017
- GLOBALFOUNDRIES Inc.
- Aritra Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical NAND and method of making thereof using sequential stack e...
- Patent number 9,698,153
- Issue date Jul 4, 2017
- SanDisk Technologies LLC
- Jin Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic three-dimensional NAND strings and methods of fabricatio...
- Patent number 9,576,975
- Issue date Feb 21, 2017
- SanDisk Technologies LLC
- Yanli Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ALTERNATING STACK OF SOU...
- Publication number 20210050360
- Publication date Feb 18, 2021
- SANDISK TECHNOLOGIES LLC
- James KAI
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ALTERNATING STACK OF SOU...
- Publication number 20210050359
- Publication date Feb 18, 2021
- SANDISK TECHNOLOGIES LLC
- James KAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE HAVING ON-PITCH DRAIN SELECT GATE E...
- Publication number 20210005617
- Publication date Jan 7, 2021
- SANDISK TECHNOLOGIES LLC
- James KAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REMOVING A BULK SUBSTRATE FROM A BONDED ASSEMBLY OF WAFERS
- Publication number 20200357783
- Publication date Nov 12, 2020
- SANDISK TECHNOLOGIES LLC
- James KAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL DEVICE WITH BONDED STRUCTURES INCLUDING A SUPPORT...
- Publication number 20200286905
- Publication date Sep 10, 2020
- SANDISK TECHNOLOGIES LLC
- James KAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDED THREE-DIMENSIONAL MEMORY DEVICES AND METHODS OF MAKING THE S...
- Publication number 20200258904
- Publication date Aug 13, 2020
- SANDISK TECHNOLOGIES LLC
- James KAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH-ARRAY CONDUCTIVE VIA STRUCTURES FOR A THREE-DIMENSIONAL MEM...
- Publication number 20200235120
- Publication date Jul 23, 2020
- SANDISK TECHNOLOGIES LLC
- James KAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING BOND PAD-BASED POWER SUP...
- Publication number 20200235090
- Publication date Jul 23, 2020
- SANDISK TECHNOLOGIES LLC
- Murshed CHOWDHURY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING HYDROGEN DIFFUSION BLOCK...
- Publication number 20190355663
- Publication date Nov 21, 2019
- SanDisk Technologies LLC
- Masatoshi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THE SAME USING...
- Publication number 20190280003
- Publication date Sep 12, 2019
- SANDISK TECHNOLOGIES LLC
- Mitsuteru Mushiga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONCURRENT FORMATION OF MEMORY OPENINGS AND CONTACT OPENINGS FOR A...
- Publication number 20190280002
- Publication date Sep 12, 2019
- SANDISK TECHNOLOGIES LLC
- James Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH THICKENED WORD LINES IN TERRAC...
- Publication number 20190148506
- Publication date May 16, 2019
- SanDisk Technologies LLC
- Senaka Krishna KANAKAMEDALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH THICKENED WORD LINES IN TERRAC...
- Publication number 20190148392
- Publication date May 16, 2019
- SanDisk Technologies LLC
- Yoshihiro KANNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-TIER THREE-DIMENSIONAL MEMORY DEVICES CONTAINING ANNULAR DIEL...
- Publication number 20180277567
- Publication date Sep 27, 2018
- SANDISK TECHNOLOGIES LLC
- Tadashi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTOR WITH LATERALLY EXTENDED GATE D...
- Publication number 20180248013
- Publication date Aug 30, 2018
- SanDisk Technologies LLC
- Murshed CHOWDHURY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED DRAIN SIDE SELECT...
- Publication number 20180211970
- Publication date Jul 26, 2018
- SanDisk Technologies LLC
- James KAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL ARRAY DEVICE HAVING A METAL CONTAINING BARRIER AN...
- Publication number 20180151497
- Publication date May 31, 2018
- SanDisk Technologies LLC
- Raghuveer S. MAKALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE HAVING A MULTILEVEL DRAIN SELECT GA...
- Publication number 20180138193
- Publication date May 17, 2018
- SanDisk Technologies LLC
- Yanli Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED DRAIN SIDE SELECT...
- Publication number 20180138189
- Publication date May 17, 2018
- SanDisk Technologies LLC
- James KAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE HAVING EPITAXIAL GERMANIUM-CONTAINI...
- Publication number 20170365613
- Publication date Dec 21, 2017
- SanDisk Technologies LLC
- Marika GUNJI-YONEOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND IC STRUCTURE FOR INCREASING PITCH BETWEEN GATES
- Publication number 20170287829
- Publication date Oct 5, 2017
- GLOBALFOUNDRIES INC.
- Arvind Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL NAND MEMORY DEVICE WITH COMMON BIT LINE FOR MULTI...
- Publication number 20170278571
- Publication date Sep 28, 2017
- SANDISK TECHNOLOGIES INC.
- Murshed Chowdhury
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-TIER THREE-DIMENSIONAL MEMORY DEVICES CONTAINING ANNULAR DIEL...
- Publication number 20170236835
- Publication date Aug 17, 2017
- SanDisk Technologies LLC
- Tadashi NAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK FOR INTEGRATED CIRCUIT STRUCTURE AND METHOD OF FORMING SAME
- Publication number 20170221889
- Publication date Aug 3, 2017
- GLOBALFOUNDRIES INC.
- Aritra Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL NAND AND METHOD OF MAKING THEREOF USING SEQUENTIAL STACK E...
- Publication number 20160204117
- Publication date Jul 14, 2016
- SANDISK TECHNOLOGIES INC.
- Jin Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF FINFET JUNCTION
- Publication number 20160181367
- Publication date Jun 23, 2016
- International Business Machines Corporation
- Shafaat Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEUTERIUM ANNEAL OF SEMICONDUCTOR CHANNELS IN A THREE-DIMENSIONAL M...
- Publication number 20160118391
- Publication date Apr 28, 2016
- SanDisk Technologies, Inc.
- Wei ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC THREE-DIMENSIONAL NAND STRINGS AND METHODS OF FABRICATIO...
- Publication number 20160086972
- Publication date Mar 24, 2016
- SanDisk Technologies, Inc.
- Yanli ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL REGION DOPANT CONTROL IN FIN FIELD EFFECT TRANSISTOR
- Publication number 20160035831
- Publication date Feb 4, 2016
- International Business Machines Corporation
- Murshed M. Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL REGION DOPANT CONTROL IN FIN FIELD EFFECT TRANSISTOR
- Publication number 20150311343
- Publication date Oct 29, 2015
- International Business Machines Corporation
- Murshed M. Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS

Murshed M. Chowdhury

Person

Patents Grantslast 30 patents

Three-dimensional memory device having on-pitch drain select gate e...

Bonded three-dimensional memory devices and methods of making the s...

Method for removing a bulk substrate from a bonded assembly of wafers

Three-dimensional memory device containing alternating stack of sou...

Three-dimensional device with bonded structures including a support...

Three-dimensional memory device containing alternating stack of sou...

Through-array conductive via structures for a three-dimensional mem...

Multi-tier three-dimensional memory devices containing annular diel...

Three-dimensional memory device containing bond pad-based power sup...

Method for removing a bulk substrate from a bonded assembly of wafers

Channel region dopant control in fin field effect transistor

Bonded three-dimensional memory devices and methods of making the s...

Three-dimensional memory device containing hydrogen diffusion block...

Three-dimensional memory device and method of making the same using...

Three-dimensional memory device with self-aligned drain side select...

Three-dimensional memory device with thickened word lines in terrac...

Three-dimensional memory device with thickened word lines in terrac...

Concurrent formation of memory openings and contact openings for a...

Concurrent formation of memory openings and contact openings for a...

Three-dimensional array device having a metal containing barrier an...

High voltage field effect transistor with laterally extended gate d...

Three dimensional NAND memory device with common bit line for multi...

Three-dimensional memory device having epitaxial germanium-containi...

Method and IC structure for increasing pitch between gates

Multi-tier three-dimensional memory devices containing annular diel...

Three-dimensional memory device with self-aligned drain side select...

Three-dimensional memory device having a multilevel drain select ga...

Gate stack for integrated circuit structure and method of forming same

Vertical NAND and method of making thereof using sequential stack e...

Monolithic three-dimensional NAND strings and methods of fabricatio...

Patents Applicationslast 30 patents

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ALTERNATING STACK OF SOU...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ALTERNATING STACK OF SOU...

THREE-DIMENSIONAL MEMORY DEVICE HAVING ON-PITCH DRAIN SELECT GATE E...

METHOD FOR REMOVING A BULK SUBSTRATE FROM A BONDED ASSEMBLY OF WAFERS

THREE-DIMENSIONAL DEVICE WITH BONDED STRUCTURES INCLUDING A SUPPORT...

BONDED THREE-DIMENSIONAL MEMORY DEVICES AND METHODS OF MAKING THE S...

THROUGH-ARRAY CONDUCTIVE VIA STRUCTURES FOR A THREE-DIMENSIONAL MEM...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING BOND PAD-BASED POWER SUP...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING HYDROGEN DIFFUSION BLOCK...

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THE SAME USING...

CONCURRENT FORMATION OF MEMORY OPENINGS AND CONTACT OPENINGS FOR A...

THREE-DIMENSIONAL MEMORY DEVICE WITH THICKENED WORD LINES IN TERRAC...

THREE-DIMENSIONAL MEMORY DEVICE WITH THICKENED WORD LINES IN TERRAC...

MULTI-TIER THREE-DIMENSIONAL MEMORY DEVICES CONTAINING ANNULAR DIEL...

HIGH VOLTAGE FIELD EFFECT TRANSISTOR WITH LATERALLY EXTENDED GATE D...

THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED DRAIN SIDE SELECT...

THREE-DIMENSIONAL ARRAY DEVICE HAVING A METAL CONTAINING BARRIER AN...

THREE-DIMENSIONAL MEMORY DEVICE HAVING A MULTILEVEL DRAIN SELECT GA...

THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED DRAIN SIDE SELECT...

THREE-DIMENSIONAL MEMORY DEVICE HAVING EPITAXIAL GERMANIUM-CONTAINI...

METHOD AND IC STRUCTURE FOR INCREASING PITCH BETWEEN GATES

THREE DIMENSIONAL NAND MEMORY DEVICE WITH COMMON BIT LINE FOR MULTI...

MULTI-TIER THREE-DIMENSIONAL MEMORY DEVICES CONTAINING ANNULAR DIEL...

GATE STACK FOR INTEGRATED CIRCUIT STRUCTURE AND METHOD OF FORMING SAME

VERTICAL NAND AND METHOD OF MAKING THEREOF USING SEQUENTIAL STACK E...

FORMATION OF FINFET JUNCTION

DEUTERIUM ANNEAL OF SEMICONDUCTOR CHANNELS IN A THREE-DIMENSIONAL M...

MONOLITHIC THREE-DIMENSIONAL NAND STRINGS AND METHODS OF FABRICATIO...

CHANNEL REGION DOPANT CONTROL IN FIN FIELD EFFECT TRANSISTOR

CHANNEL REGION DOPANT CONTROL IN FIN FIELD EFFECT TRANSISTOR