Muthumanickam Sankarapandian

Person

Yorktown Heights, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Maskless alignment scheme for BEOL memory array manufacturing
- Patent number 12,107,008
- Issue date Oct 1, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inner spacer formation for nanosheet transistors
- Patent number 12,046,680
- Issue date Jul 23, 2024
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Confined bridge cell phase change memory
- Patent number 11,980,111
- Issue date May 7, 2024
- International Business Machines Corporation
- Injo Ok
Information Patent Grant
Phase change memory cell spacer
- Patent number 11,930,724
- Issue date Mar 12, 2024
- International Business Machines Corporation
- Injo Ok
Information Patent Grant
Metal via structure
- Patent number 11,784,120
- Issue date Oct 10, 2023
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enabling residue free gap fill between nanosheets
- Patent number 11,515,431
- Issue date Nov 29, 2022
- International Business Machines Corporation
- Indira Seshadri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory cell with a wrap around and ring type of electr...
- Patent number 11,456,415
- Issue date Sep 27, 2022
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Approach to bottom dielectric isolation for vertical transport fin...
- Patent number 11,302,797
- Issue date Apr 12, 2022
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory device
- Patent number 11,264,569
- Issue date Mar 1, 2022
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts and liners having multi-segmented protective caps
- Patent number 11,171,051
- Issue date Nov 9, 2021
- International Business Machines Corporation
- Jennifer Fullam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal via structure
- Patent number 11,152,298
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform work function metal recess for vertical transistor compleme...
- Patent number 11,133,308
- Issue date Sep 28, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate and junction for VTFET
- Patent number 11,075,280
- Issue date Jul 27, 2021
- International Business Machines Corporation
- Zuoguang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Svia using a single damascene interconnect
- Patent number 11,037,822
- Issue date Jun 15, 2021
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Removal of trilayer resist without damage to underlying structure
- Patent number 10,957,536
- Issue date Mar 23, 2021
- ELPIS TECHNOLOGIES INC.
- Muthumanickam Sankarapandian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having straight bottom spacers
- Patent number 10,943,992
- Issue date Mar 9, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet eDRAM
- Patent number 10,937,789
- Issue date Mar 2, 2021
- International Business Machines Corporation
- Alexander Reznicek
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Silicon residue removal in nanosheet transistors
- Patent number 10,896,816
- Issue date Jan 19, 2021
- International Business Machines Corporation
- Zhenxing Bi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Controlling via critical dimension with a titanium nitride hard mask
- Patent number 10,886,197
- Issue date Jan 5, 2021
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Approach to bottom dielectric isolation for vertical transport fin...
- Patent number 10,840,354
- Issue date Nov 17, 2020
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single trench damascene interconnect using TiN HMO
- Patent number 10,825,720
- Issue date Nov 3, 2020
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crossbar reinforced semiconductor fins having reduced wiggling
- Patent number 10,755,963
- Issue date Aug 25, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly selective dry etch process for vertical FET STI recess
- Patent number 10,734,245
- Issue date Aug 4, 2020
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field-effect-transistors having a silicon oxide layer with...
- Patent number 10,707,326
- Issue date Jul 7, 2020
- International Business Machines Corporation
- Chi-Chun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to recess cobalt for gate metal application
- Patent number 10,707,132
- Issue date Jul 7, 2020
- International Business Machines Corporation
- Georges Jacobi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection of high-K dielectric during reliability anneal on nanosh...
- Patent number 10,692,985
- Issue date Jun 23, 2020
- International Business Machines Corporation
- Nicolas J. Loubet
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vertical transistors with improved top source/drain junctions
- Patent number 10,680,081
- Issue date Jun 9, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enabling residue free gap fill between nanosheets
- Patent number 10,658,521
- Issue date May 19, 2020
- International Business Machines Corporation
- Indira Seshadri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Approach to bottom dielectric isolation for vertical transport fin...
- Patent number 10,629,702
- Issue date Apr 21, 2020
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to recess cobalt for gate metal application
- Patent number 10,615,078
- Issue date Apr 7, 2020
- International Business Machines Corporation
- Georges Jacobi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Epitaxy Everywhere Based Self-Aligned Direct Backside Contact
- Publication number 20240105799
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER WORK FUNCTION METAL IN NANOSHEET STACKS USING A SACRIFIC...
- Publication number 20230187495
- Publication date Jun 15, 2023
- International Business Machines Corporation
- RUQIANG BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORMLY PATTERNED TWO-TERMINAL DEVICES
- Publication number 20230180485
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MASKLESS ALIGNMENT SCHEME FOR BEOL MEMORY ARRAY MANUFACTURING
- Publication number 20230145961
- Publication date May 11, 2023
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INNER SPACER FORMATION FOR NANOSHEET TRANSISTORS
- Publication number 20230114163
- Publication date Apr 13, 2023
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICALLY INSULATED PROJECTION LINER FOR AI DEVICE
- Publication number 20230085288
- Publication date Mar 16, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFINED BRIDGE CELL PHASE CHANGE MEMORY
- Publication number 20230075622
- Publication date Mar 9, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL SPACER
- Publication number 20230058218
- Publication date Feb 23, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL WITH A WRAP AROUND AND RING TYPE OF ELECTR...
- Publication number 20220181546
- Publication date Jun 9, 2022
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL VIA STRUCTURE
- Publication number 20220005762
- Publication date Jan 6, 2022
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACTS AND LINERS HAVING MULTI-SEGMENTED PROTECTIVE CAPS
- Publication number 20210351073
- Publication date Nov 11, 2021
- International Business Machines Corporation
- Jennifer Fullam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE
- Publication number 20210135104
- Publication date May 6, 2021
- International Business Machines Corporation
- Injo Ok
- G11 - INFORMATION STORAGE
Information Patent Application
METAL VIA STRUCTURE
- Publication number 20200388567
- Publication date Dec 10, 2020
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SVIA USING A SINGLE DAMASCENE INTERCONNECT
- Publication number 20200357692
- Publication date Nov 12, 2020
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING STRAIGHT BOTTOM SPACERS
- Publication number 20200357894
- Publication date Nov 12, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM WORK FUNCTION METAL RECESS FOR VERTICAL TRANSISTOR COMPLEME...
- Publication number 20200350313
- Publication date Nov 5, 2020
- International Business Machines Corporation
- RUILONG XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Gate and Junction for VTFET
- Publication number 20200335601
- Publication date Oct 22, 2020
- International Business Machines Corporation
- Zuoguang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENABLING RESIDUE FREE GAP FILL BETWEEN NANOSHEETS
- Publication number 20200279956
- Publication date Sep 3, 2020
- International Business Machines Corporation
- Indira SESHADRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPROACH TO BOTTOM DIELECTRIC ISOLATION FOR VERTICAL TRANSPORT FIN...
- Publication number 20200212202
- Publication date Jul 2, 2020
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLING VIA CRITICAL DIMENSION WITH A TITANIUM NITRIDE HARD MASK
- Publication number 20200194343
- Publication date Jun 18, 2020
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSSBAR REINFORCED SEMICONDUCTOR FINS HAVING REDUCED WIGGLING
- Publication number 20200135539
- Publication date Apr 30, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Highly Selective Dry Etch Process for Vertical FET STI Recess
- Publication number 20200126805
- Publication date Apr 23, 2020
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REMOVAL OF TRILAYER RESIST WITHOUT DAMAGE TO UNDERLYING STRUCTURE
- Publication number 20200066519
- Publication date Feb 27, 2020
- International Business Machines Corporation
- Muthumanickam Sankarapandian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single Trench Damascene Interconnect Using TiN HMO
- Publication number 20200066575
- Publication date Feb 27, 2020
- International Business Machines Corporation
- Yann Mignot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO RECESS COBALT FOR GATE METAL APPLICATION
- Publication number 20190385913
- Publication date Dec 19, 2019
- International Business Machines Corporation
- Georges Jacobi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO RECESS COBALT FOR GATE METAL APPLICATION
- Publication number 20190385912
- Publication date Dec 19, 2019
- International Business Machines Corporation
- Georges Jacobi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET eDRAM
- Publication number 20190378842
- Publication date Dec 12, 2019
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENABLING RESIDUE FREE GAP FILL BETWEEN NANOSHEETS
- Publication number 20190355851
- Publication date Nov 21, 2019
- International Business Machines Corporation
- Indira SESHADRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING MERGED SOURCE/DRAIN REGIONS ON INTEGRATED CIRCUI...
- Publication number 20190214484
- Publication date Jul 11, 2019
- GLOBALFOUNDRIES INC.
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTION OF HIGH-K DIELECTRIC DURING RELIABILITY ANNEAL ON NANOSH...
- Publication number 20190189766
- Publication date Jun 20, 2019
- International Business Machines Corporation
- Nicolas J. Loubet
- H01 - BASIC ELECTRIC ELEMENTS

Muthumanickam Sankarapandian

Person

Patents Grantslast 30 patents

Maskless alignment scheme for BEOL memory array manufacturing

Inner spacer formation for nanosheet transistors

Confined bridge cell phase change memory

Phase change memory cell spacer

Metal via structure

Enabling residue free gap fill between nanosheets

Phase change memory cell with a wrap around and ring type of electr...

Approach to bottom dielectric isolation for vertical transport fin...

Phase change memory device

Contacts and liners having multi-segmented protective caps

Metal via structure

Uniform work function metal recess for vertical transistor compleme...

Self-aligned gate and junction for VTFET

Svia using a single damascene interconnect

Removal of trilayer resist without damage to underlying structure

Transistor having straight bottom spacers

Nanosheet eDRAM

Silicon residue removal in nanosheet transistors

Controlling via critical dimension with a titanium nitride hard mask

Approach to bottom dielectric isolation for vertical transport fin...

Single trench damascene interconnect using TiN HMO

Crossbar reinforced semiconductor fins having reduced wiggling

Highly selective dry etch process for vertical FET STI recess

Vertical field-effect-transistors having a silicon oxide layer with...

Method to recess cobalt for gate metal application

Protection of high-K dielectric during reliability anneal on nanosh...

Vertical transistors with improved top source/drain junctions

Enabling residue free gap fill between nanosheets

Approach to bottom dielectric isolation for vertical transport fin...

Method to recess cobalt for gate metal application

Patents Applicationslast 30 patents

Epitaxy Everywhere Based Self-Aligned Direct Backside Contact

MULTILAYER WORK FUNCTION METAL IN NANOSHEET STACKS USING A SACRIFIC...

UNIFORMLY PATTERNED TWO-TERMINAL DEVICES

MASKLESS ALIGNMENT SCHEME FOR BEOL MEMORY ARRAY MANUFACTURING

INNER SPACER FORMATION FOR NANOSHEET TRANSISTORS

ELECTRICALLY INSULATED PROJECTION LINER FOR AI DEVICE

CONFINED BRIDGE CELL PHASE CHANGE MEMORY

PHASE CHANGE MEMORY CELL SPACER

PHASE CHANGE MEMORY CELL WITH A WRAP AROUND AND RING TYPE OF ELECTR...

METAL VIA STRUCTURE

CONTACTS AND LINERS HAVING MULTI-SEGMENTED PROTECTIVE CAPS

PHASE CHANGE MEMORY DEVICE

METAL VIA STRUCTURE

SVIA USING A SINGLE DAMASCENE INTERCONNECT

TRANSISTOR HAVING STRAIGHT BOTTOM SPACERS

UNIFORM WORK FUNCTION METAL RECESS FOR VERTICAL TRANSISTOR COMPLEME...

Self-Aligned Gate and Junction for VTFET

ENABLING RESIDUE FREE GAP FILL BETWEEN NANOSHEETS

APPROACH TO BOTTOM DIELECTRIC ISOLATION FOR VERTICAL TRANSPORT FIN...

CONTROLLING VIA CRITICAL DIMENSION WITH A TITANIUM NITRIDE HARD MASK

CROSSBAR REINFORCED SEMICONDUCTOR FINS HAVING REDUCED WIGGLING

Highly Selective Dry Etch Process for Vertical FET STI Recess

REMOVAL OF TRILAYER RESIST WITHOUT DAMAGE TO UNDERLYING STRUCTURE

Single Trench Damascene Interconnect Using TiN HMO

METHOD TO RECESS COBALT FOR GATE METAL APPLICATION

METHOD TO RECESS COBALT FOR GATE METAL APPLICATION

NANOSHEET eDRAM

ENABLING RESIDUE FREE GAP FILL BETWEEN NANOSHEETS

METHODS OF FORMING MERGED SOURCE/DRAIN REGIONS ON INTEGRATED CIRCUI...

PROTECTION OF HIGH-K DIELECTRIC DURING RELIABILITY ANNEAL ON NANOSH...