Myoungho Lim

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Colorado Springs, CO, US

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Patents Grantslast 30 patents

Information Patent Grant
Ferroelectric memory and method of operating same
- Patent number 6,924,997
- Issue date Aug 2, 2005
- Symetrix Corporation
- Zheng Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Low thermal budget fabrication of ferroelectric memory using RTP
- Patent number 6,815,223
- Issue date Nov 9, 2004
- Symetrix Corporation
- Jolanta Celinska
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric field effect transistor, memory utilizing same, and m...
- Patent number 6,441,414
- Issue date Aug 27, 2002
- Symetrix Corporation
- Myoungho Lim
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric device with bismuth tantalate capping layer and metho...
- Patent number 6,437,380
- Issue date Aug 20, 2002
- Symetrix Corporation
- Myoungho Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory and method of operating same
- Patent number 6,373,743
- Issue date Apr 16, 2002
- Symetrix Corporation
- Zheng Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory and method of operating same
- Patent number 6,370,056
- Issue date Apr 9, 2002
- Symetrix Corporation
- Zheng Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric field effect transistor, memory utilizing same, and m...
- Patent number 6,339,238
- Issue date Jan 15, 2002
- Symetrix Corporation
- Myoungho Lim
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Low thermal budget fabrication of ferroelectric memory using RTP
- Publication number 20040101977
- Publication date May 27, 2004
- Symetrix Corporation
- Jolanta Celinska
- C30 - CRYSTAL GROWTH
Information Patent Application
Ferroelectric memory and method of operating same
- Publication number 20040047174
- Publication date Mar 11, 2004
- Zheng Chen
- G11 - INFORMATION STORAGE