Myung YANG

Person

Niskayuna, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor stacks having insulating spacers, and related fabricatio...
- Patent number 12,356,689
- Issue date Jul 8, 2025
- Samsung Electronics Co., Ltd.
- Myung Yang

Patents Applicationslast 30 patents

Information Patent Application
STACKED TRANSISTOR DEVICE HAVING CAPPING LAYER ON UPPER GATE MATERI...
- Publication number 20250151389
- Publication date May 8, 2025
- Samsung Electronics Co., Ltd.
- SEUNGCHAN YUN
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING DUAL CONTACT STRUCTURES ON SOURCE/DR...
- Publication number 20250142871
- Publication date May 1, 2025
- Samsung Electronics Co., Ltd.
- Jaehong LEE
Information Patent Application
TRANSISTOR STACKS HAVING INSULATING SPACERS, AND RELATED FABRICATIO...
- Publication number 20250133801
- Publication date Apr 24, 2025
- Samsung Electronics Co., Ltd.
- MYUNG YANG
Information Patent Application
INTEGRATED CIRCUIT DEVICE INCLUDING A PFET WITH A SILICON GERMANIUM...
- Publication number 20250120127
- Publication date Apr 10, 2025
- Samsung Electronics Co., Ltd.
- Myung Yang
Information Patent Application
MACRO DEVICE-UNDER-TEST STRUCTURE FOR MEASURING CONTACT RESISTANCE...
- Publication number 20240387555
- Publication date Nov 21, 2024
- Samsung Electronics Co., Ltd.
- Jaehong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE INCLUDING STACKED TRANSISTORS AND METHODS...
- Publication number 20240363633
- Publication date Oct 31, 2024
- Samsung Electronics Co., Ltd.
- MYUNG YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3DSFET DEVICE INCLUDING RESTRUCTURED LOWER SOURCE/DRAIN REGION HAVI...
- Publication number 20240304669
- Publication date Sep 12, 2024
- Samsung Electronics Co., Ltd.
- Keumseok Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING 3D-STACKED FIELD-EFFECT TRANSISTORS...
- Publication number 20240282855
- Publication date Aug 22, 2024
- Samsung Electronics Co., Ltd.
- Myunghoon JUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SELF-ALIGNED BACKSIDE CONTACT STRUCT...
- Publication number 20240282670
- Publication date Aug 22, 2024
- Samsung Electronics Co., Ltd.
- Myung Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3DSFET DEVICE INCLUDING SELF-ALIGNED SOURCE/DRAIN CONTACT STRUCTURE...
- Publication number 20240162309
- Publication date May 16, 2024
- Samsung Electronics Co., Ltd.
- Myung YANG
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Transistor stacks having insulating spacers, and related fabricatio...

Patents Applicationslast 30 patents

STACKED TRANSISTOR DEVICE HAVING CAPPING LAYER ON UPPER GATE MATERI...

SEMICONDUCTOR DEVICE INCLUDING DUAL CONTACT STRUCTURES ON SOURCE/DR...

TRANSISTOR STACKS HAVING INSULATING SPACERS, AND RELATED FABRICATIO...

INTEGRATED CIRCUIT DEVICE INCLUDING A PFET WITH A SILICON GERMANIUM...

MACRO DEVICE-UNDER-TEST STRUCTURE FOR MEASURING CONTACT RESISTANCE...

INTEGRATED CIRCUIT DEVICE INCLUDING STACKED TRANSISTORS AND METHODS...

3DSFET DEVICE INCLUDING RESTRUCTURED LOWER SOURCE/DRAIN REGION HAVI...

SEMICONDUCTOR DEVICE INCLUDING 3D-STACKED FIELD-EFFECT TRANSISTORS...

SEMICONDUCTOR DEVICE INCLUDING SELF-ALIGNED BACKSIDE CONTACT STRUCT...

3DSFET DEVICE INCLUDING SELF-ALIGNED SOURCE/DRAIN CONTACT STRUCTURE...