Myungsun Kim

Person

Pleasanton, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Selective silicon etch for gate all around transistors
- Patent number 12,062,708
- Issue date Aug 13, 2024
- Applied Materials, Inc.
- Michael Stolfi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective silicon etch for gate all around transistors
- Patent number 11,508,828
- Issue date Nov 22, 2022
- Applied Materials, Inc.
- Michael Stolfi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating junctions and spacers for horizontal gate al...
- Patent number 10,177,227
- Issue date Jan 8, 2019
- Applied Materials, Inc.
- Naomi Yoshida
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TEMPLATE FOR NANOSHEET SOURCE DRAIN FORMATION WITH BOTTOM DIELECTRIC
- Publication number 20230040606
- Publication date Feb 9, 2023
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE SILICON ETCH FOR GATE ALL AROUND TRANSISTORS
- Publication number 20230039074
- Publication date Feb 9, 2023
- Applied Materials, Inc.
- Michael Stolfi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALL AROUND DEVICE WITH FULLY-DEPLETED SILICON-ON-INSULATOR
- Publication number 20220246742
- Publication date Aug 4, 2022
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE MODULATION FOR GATE-ALL-AROUND FET ARCHITECTURE
- Publication number 20220238680
- Publication date Jul 28, 2022
- Applied Materials, Inc.
- Steven C. H. HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF GATE ALL AROUND DEVICE
- Publication number 20220123123
- Publication date Apr 21, 2022
- Applied Materials, Inc.
- Myungsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED FLOWABLE LOW-K GAP-FILL AND PLASMA TREATMENT
- Publication number 20220037147
- Publication date Feb 3, 2022
- Applied Materials, Inc.
- Myungsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFORMAL OXIDATION FOR GATE ALL AROUND NANOSHEET I/O DEVICE
- Publication number 20220037529
- Publication date Feb 3, 2022
- Applied Materials, Inc.
- Myungsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE SILICON ETCH FOR GATE ALL AROUND TRANSISTORS
- Publication number 20220005937
- Publication date Jan 6, 2022
- Applied Materials, Inc.
- Michael Stolfi
- H01 - BASIC ELECTRIC ELEMENTS

Myungsun Kim

Person

Patents Grantslast 30 patents

Selective silicon etch for gate all around transistors

Selective silicon etch for gate all around transistors

Method for fabricating junctions and spacers for horizontal gate al...

Patents Applicationslast 30 patents

TEMPLATE FOR NANOSHEET SOURCE DRAIN FORMATION WITH BOTTOM DIELECTRIC

SELECTIVE SILICON ETCH FOR GATE ALL AROUND TRANSISTORS

GATE ALL AROUND DEVICE WITH FULLY-DEPLETED SILICON-ON-INSULATOR

THRESHOLD VOLTAGE MODULATION FOR GATE-ALL-AROUND FET ARCHITECTURE

FORMATION OF GATE ALL AROUND DEVICE

INTEGRATED FLOWABLE LOW-K GAP-FILL AND PLASMA TREATMENT

CONFORMAL OXIDATION FOR GATE ALL AROUND NANOSHEET I/O DEVICE

SELECTIVE SILICON ETCH FOR GATE ALL AROUND TRANSISTORS