Na REN

Person

Hangzhou, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Trench-gate power MOSFET with optimized layout
- Patent number 11,658,237
- Issue date May 23, 2023
- ZJU-Hangzhou Global Scientific and Technological Innovation Center
- Na Ren
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Fast-Turn-On Floating Island Device and Method for Manufacturing Th...
- Publication number 20230268448
- Publication date Aug 24, 2023
- Zhejiang University
- Kuang SHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Trench Gate MOSFET and Method for Manufacturing The...
- Publication number 20230130726
- Publication date Apr 27, 2023
- ZJU-Hangzhou Global Scientific and Technological Innovation Center
- Kuang SHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-GATE POWER MOSFET WITH OPTIMIZED LAYOUT
- Publication number 20230078222
- Publication date Mar 16, 2023
- ZJU-Hangzhou Global Scientific and Technological Innovation Center
- Na REN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH GATE SILICON CARBIDE MOSFET WITH HIGH RELIABILITY
- Publication number 20230072827
- Publication date Mar 9, 2023
- ZJU-Hangzhou Global Scientific and Technological Innovation Center
- Kuang SHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-GATE MOSFET WITH ELECTRIC FIELD SHIELDING REGION
- Publication number 20230039141
- Publication date Feb 9, 2023
- ZJU-Hangzhou Global Scientific and Technological Innovation Center
- Na REN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILLICON CARBIDE POWER MOSFET WITH ENHANCED BODY DIODE
- Publication number 20210305422
- Publication date Sep 30, 2021
- Zhejiang University
- Kuang SHENG
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Trench-gate power MOSFET with optimized layout

Patents Applicationslast 30 patents

Fast-Turn-On Floating Island Device and Method for Manufacturing Th...

Silicon Carbide Trench Gate MOSFET and Method for Manufacturing The...

TRENCH-GATE POWER MOSFET WITH OPTIMIZED LAYOUT

TRENCH GATE SILICON CARBIDE MOSFET WITH HIGH RELIABILITY

TRENCH-GATE MOSFET WITH ELECTRIC FIELD SHIELDING REGION

SILLICON CARBIDE POWER MOSFET WITH ENHANCED BODY DIODE