Nabil G. Mistkawi

Person

Keizer, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit devices with non-collapsed fins and methods of t...
- Patent number 11,515,304
- Issue date Nov 29, 2022
- Tahoe Research, LTD.
- Nabil G. Mistkawi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Geometry tuning of fin based transistor
- Patent number 10,944,006
- Issue date Mar 9, 2021
- Intel Corporation
- Glenn A. Glass
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Integrated circuit devices with non-collapsed fins and methods of t...
- Patent number 10,833,076
- Issue date Nov 10, 2020
- Intel Corporation
- Nabil G. Mistkawi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement channel etch for high quality interface
- Patent number 10,755,984
- Issue date Aug 25, 2020
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for integration of Ge-rich p-MOS source/drain
- Patent number 10,541,334
- Issue date Jan 21, 2020
- Intel Corporation
- Glenn A. Glass
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Techniques for integration of Ge-rich p-MOS source/drain
- Patent number 10,147,817
- Issue date Dec 4, 2018
- Intel Corporation
- Glenn A. Glass
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Techniques for integration of Ge-rich p-MOS source/drain contacts
- Patent number 9,859,424
- Issue date Jan 2, 2018
- Intel Corporation
- Glenn A. Glass
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Technology for selectively etching titanium and titanium nitride in...
- Patent number 9,472,456
- Issue date Oct 18, 2016
- Intel Corporation
- Erica J. Thompson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composition for etching a metal hard mask material in semiconductor...
- Patent number 8,426,319
- Issue date Apr 23, 2013
- Intel Corporation
- Nabil G. Mistkawi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Composition for etching a metal hard mask material in semiconductor...
- Patent number 8,025,811
- Issue date Sep 27, 2011
- Intel Corporation
- Nabil G. Mistkawi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT DEVICES WITH NON-COLLAPSED FINS AND METHODS OF T...
- Publication number 20230098459
- Publication date Mar 30, 2023
- Tahoe Research, Ltd.
- Nabil G. MISTKAWI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES WITH NON-COLLAPSED FINS AND METHODS OF T...
- Publication number 20210020632
- Publication date Jan 21, 2021
- Intel Corporation
- Nabil G. Mistkawi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES WITH NON-COLLAPSED FINS AND METHODS OF T...
- Publication number 20210013199
- Publication date Jan 14, 2021
- Intel Corporation
- Nabil G. Mistkawi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES WITH NON-COLLAPSED FINS AND METHODS OF T...
- Publication number 20200119003
- Publication date Apr 16, 2020
- Intel Corporation
- Nabil G. Mistkawi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE TRANSISTORS EMPLOYING CARBON-BASED LAYERS
- Publication number 20190221641
- Publication date Jul 18, 2019
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING NANOWIRE TRANSISTORS USING DIRECTIONAL SELECTIVE ETCHING
- Publication number 20190214460
- Publication date Jul 11, 2019
- Intel Corporation
- Nabil G. Mistkawi
- B82 - NANO-TECHNOLOGY
Information Patent Application
TECHNIQUES FOR INTEGRATION OF GE-RICH P-MOS SOURCE/DRAIN
- Publication number 20190109234
- Publication date Apr 11, 2019
- Intel Corporation
- GLENN A. GLASS
- B82 - NANO-TECHNOLOGY
Information Patent Application
GEOMETRY TUNING OF FIN BASED TRANSISTOR
- Publication number 20190019891
- Publication date Jan 17, 2019
- Intel Corporation
- Glenn A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT CHANNEL ETCH FOR HIGH QUALITY INTERFACE
- Publication number 20180197789
- Publication date Jul 12, 2018
- Intel Corporation
- GLENN A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR INTEGRATION OF GE-RICH P-MOS SOURCE/DRAIN
- Publication number 20180145174
- Publication date May 24, 2018
- Intel Corporation
- GLENN A. GLASS
- B82 - NANO-TECHNOLOGY
Information Patent Application
TECHNIQUES FOR INTEGRATION OF GE-RICH P-MOS SOURCE/DRAIN CONTACTS
- Publication number 20170012124
- Publication date Jan 12, 2017
- Intel Corporation
- GLENN A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGY FOR SELECTIVELY ETCHING TITANIUM AND TITANIUM NITRIDE IN...
- Publication number 20150179510
- Publication date Jun 25, 2015
- ERICA J. THOMPSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composition for etching a metal hard mask material in semiconductor...
- Publication number 20080318435
- Publication date Dec 25, 2008
- Nabil G. Mistkawi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Composition for etching a metal hard mask material in semiconductor...
- Publication number 20070235684
- Publication date Oct 11, 2007
- Nabil G. Mistkawi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Selective etching silicon nitride
- Publication number 20050159011
- Publication date Jul 21, 2005
- Vani K. Thirumala
- H01 - BASIC ELECTRIC ELEMENTS

Nabil G. Mistkawi

Person

Patents Grantslast 30 patents

Integrated circuit devices with non-collapsed fins and methods of t...

Geometry tuning of fin based transistor

Integrated circuit devices with non-collapsed fins and methods of t...

Replacement channel etch for high quality interface

Techniques for integration of Ge-rich p-MOS source/drain

Techniques for integration of Ge-rich p-MOS source/drain

Techniques for integration of Ge-rich p-MOS source/drain contacts

Technology for selectively etching titanium and titanium nitride in...

Composition for etching a metal hard mask material in semiconductor...

Composition for etching a metal hard mask material in semiconductor...

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT DEVICES WITH NON-COLLAPSED FINS AND METHODS OF T...

INTEGRATED CIRCUIT DEVICES WITH NON-COLLAPSED FINS AND METHODS OF T...

INTEGRATED CIRCUIT DEVICES WITH NON-COLLAPSED FINS AND METHODS OF T...

INTEGRATED CIRCUIT DEVICES WITH NON-COLLAPSED FINS AND METHODS OF T...

NANOWIRE TRANSISTORS EMPLOYING CARBON-BASED LAYERS

FABRICATING NANOWIRE TRANSISTORS USING DIRECTIONAL SELECTIVE ETCHING

TECHNIQUES FOR INTEGRATION OF GE-RICH P-MOS SOURCE/DRAIN

GEOMETRY TUNING OF FIN BASED TRANSISTOR

REPLACEMENT CHANNEL ETCH FOR HIGH QUALITY INTERFACE

TECHNIQUES FOR INTEGRATION OF GE-RICH P-MOS SOURCE/DRAIN

TECHNIQUES FOR INTEGRATION OF GE-RICH P-MOS SOURCE/DRAIN CONTACTS

TECHNOLOGY FOR SELECTIVELY ETCHING TITANIUM AND TITANIUM NITRIDE IN...

Composition for etching a metal hard mask material in semiconductor...

Composition for etching a metal hard mask material in semiconductor...

Selective etching silicon nitride