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Nadeemmullah A. Mahadik
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Springfield, VA, US
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Patents Grants
last 30 patents
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Patent Grant
Reduction of basal plane dislocations in epitaxial SiC using an in-...
Patent number
10,256,094
Issue date
Apr 9, 2019
The Government of the United States of America, as represented by the Secreta...
Rachael L. Myers-Ward
C30 - CRYSTAL GROWTH
Information
Patent Grant
Reduction of basal plane dislocations in epitaxial SiC using an in-...
Patent number
10,256,090
Issue date
Apr 9, 2019
The United States of America, as represented by the Secretary of the Navy
Rachael L. Myers-Ward
C30 - CRYSTAL GROWTH
Information
Patent Grant
Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN and...
Patent number
9,773,666
Issue date
Sep 26, 2017
The United States of America, as represented by the Secretary of the Navy
Neeraj Nepal
C30 - CRYSTAL GROWTH
Patents Applications
last 30 patents
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Patent Application
Epitaxial Growth of Cubic and Hexagonal InN Films and Their Alloys...
Publication number
20150140789
Publication date
May 21, 2015
THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
Neeraj Nepal
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SiC USING AN IN-...
Publication number
20140190399
Publication date
Jul 10, 2014
THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
Rachael L. Myers-Ward
C30 - CRYSTAL GROWTH
Information
Patent Application
REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SiC USING AN IN-...
Publication number
20140193965
Publication date
Jul 10, 2014
THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETA...
Rachael L. Myers-Ward
C30 - CRYSTAL GROWTH
Information
Patent Application
Plasma-Assisted Atomic Layer Epitaxy of Cubic and Hexagonal InN and...
Publication number
20130334666
Publication date
Dec 19, 2013
The Government of the United Stated of America, as represented by the Secreta...
Neeraj Nepal
H01 - BASIC ELECTRIC ELEMENTS