Nak-jin Son

Person

Suwon-si, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit device and method of manufacturing the same
- Patent number 11,715,786
- Issue date Aug 1, 2023
- Samsung Electronics Co., Ltd.
- Nak-jin Son
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Integrated circuit device and method of manufacturing the same
- Patent number 11,094,800
- Issue date Aug 17, 2021
- Samsung Electronics Co., Ltd.
- Nak-jin Son
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 9,564,340
- Issue date Feb 7, 2017
- Samsung Electronics Co., Ltd.
- Gi-bong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including conductive plug
- Patent number 9,548,260
- Issue date Jan 17, 2017
- Samsung Electronics Co., Ltd.
- Je-min Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 9,466,703
- Issue date Oct 11, 2016
- Samsung Electronics Co., Ltd.
- Seung-Hyun Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating a semiconductor device
- Patent number 9,159,730
- Issue date Oct 13, 2015
- Samsung Electronics Co., Ltd.
- Dae-Ik Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices using air spaces to separate conductive struc...
- Patent number 9,123,550
- Issue date Sep 1, 2015
- Samsung Electronics Co., Ltd.
- Nak-jin Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 9,012,321
- Issue date Apr 21, 2015
- Samsung Electronics Co., Ltd.
- Dae-ik Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of doping polysilicon layer that utilizes gate insulation la...
- Patent number 7,833,864
- Issue date Nov 16, 2010
- Samsung Electronics Co., Ltd.
- Yong-Chul Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric source/drain transistor employing selective epitaxial gr...
- Patent number 7,524,733
- Issue date Apr 28, 2009
- Samsung Electronics Co., Ltd.
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,268,043
- Issue date Sep 11, 2007
- Samsung Electronics Co., Ltd.
- Nak-Jin Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,259,069
- Issue date Aug 21, 2007
- Samsung Electronics Co., Ltd.
- Nak-Jin Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating transistor of DRAM semiconductor device
- Patent number 7,223,649
- Issue date May 29, 2007
- Samsung Electronics Co., Ltd.
- Yong-Chul Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric source/drain transistor employing selective epitaxial gr...
- Patent number 7,221,023
- Issue date May 22, 2007
- Samsung Electronics Co., Ltd.
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having punch-through structure off-setting the...
- Patent number 7,009,255
- Issue date Mar 7, 2006
- Samsung Electronics Co., Ltd.
- Nak-Jin Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having groove and method of fabricating the same
- Patent number 6,869,891
- Issue date Mar 22, 2005
- Samsung Electronics, Co., Ltd.
- Nak-jin Son
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20210343859
- Publication date Nov 4, 2021
- Samsung Electronics Co., Ltd.
- Nak-jin Son
- B82 - NANO-TECHNOLOGY
Information Patent Application
INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20200303521
- Publication date Sep 24, 2020
- Samsung Electronics Co., Ltd.
- Nak-jin Son
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20160225635
- Publication date Aug 4, 2016
- Samsung Electronics Co., Ltd.
- Gi-bong LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE IMPROVING THE PROCESS S...
- Publication number 20160056268
- Publication date Feb 25, 2016
- Samsung Electronics Co., Ltd.
- Hock-Chun CHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20150349094
- Publication date Dec 3, 2015
- Samsung Electronics Co., Ltd.
- Seung-Hyun SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20150099344
- Publication date Apr 9, 2015
- Dae-ik KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING CONDUCTIVE PLUG
- Publication number 20140252440
- Publication date Sep 11, 2014
- Samsung Electronics Co., Ltd.
- Je-min PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20140154882
- Publication date Jun 5, 2014
- Samsung Electronics Co., Ltd.
- Dae-Ik KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES USING AIR SPACES TO SEPARATE CONDUCTIVE STRUC...
- Publication number 20140077333
- Publication date Mar 20, 2014
- Nak-jin Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING TRANSISTOR OF DRAM SEMICONDUCTOR DEVICE
- Publication number 20070190723
- Publication date Aug 16, 2007
- Samsung Electronics Co., Ltd.
- Yong-Chul OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC SOURCE/DRAIN TRANSISTOR EMPLOYING SELECTIVE EPITAXIAL GR...
- Publication number 20070190734
- Publication date Aug 16, 2007
- Samsung Electronics Co., Ltd.
- Hyeoung-Won SEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20070087500
- Publication date Apr 19, 2007
- Samsung Electronics Co., Ltd.
- Nak-Jin Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20060008994
- Publication date Jan 12, 2006
- Samsung Electronics Co., Ltd.
- Nak-Jin Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Asymmetric source/drain transistor employing selective epitaxial gr...
- Publication number 20050191813
- Publication date Sep 1, 2005
- Hyeoung-Won Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating transistor of DRAM semiconductor device
- Publication number 20050042832
- Publication date Feb 24, 2005
- Yong-Chul Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20040004264
- Publication date Jan 8, 2004
- Samsung Electronics Co., Ltd.
- Nak-Jin Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having groove and method of fabricating the same
- Publication number 20030068875
- Publication date Apr 10, 2003
- SAMSUNG ELECTRONICS CO., LTD.
- Nak-Jin Son
- H01 - BASIC ELECTRIC ELEMENTS

Nak-jin Son

Person

Patents Grantslast 30 patents

Integrated circuit device and method of manufacturing the same

Integrated circuit device and method of manufacturing the same

Method of manufacturing semiconductor device

Semiconductor devices including conductive plug

Method for fabricating semiconductor device

Methods for fabricating a semiconductor device

Semiconductor devices using air spaces to separate conductive struc...

Method of manufacturing semiconductor device

Method of doping polysilicon layer that utilizes gate insulation la...

Asymmetric source/drain transistor employing selective epitaxial gr...

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Method of fabricating transistor of DRAM semiconductor device

Asymmetric source/drain transistor employing selective epitaxial gr...

Semiconductor device having punch-through structure off-setting the...

Semiconductor device having groove and method of fabricating the same

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME

INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE IMPROVING THE PROCESS S...

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES INCLUDING CONDUCTIVE PLUG

METHODS FOR FABRICATING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES USING AIR SPACES TO SEPARATE CONDUCTIVE STRUC...

METHOD OF FABRICATING TRANSISTOR OF DRAM SEMICONDUCTOR DEVICE

ASYMMETRIC SOURCE/DRAIN TRANSISTOR EMPLOYING SELECTIVE EPITAXIAL GR...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Semiconductor device and method of manufacturing the same

Asymmetric source/drain transistor employing selective epitaxial gr...

Method of fabricating transistor of DRAM semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor device having groove and method of fabricating the same