Nam-Ho Jeon

Person

Hwaseong-si, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having a gate electrode in a trench
- Patent number 11,469,306
- Issue date Oct 11, 2022
- Samsung Electronics Co., Ltd.
- Jee-Sun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including structures for reduced leakage curr...
- Patent number 10,770,463
- Issue date Sep 8, 2020
- Samsung Electronics Co., Ltd.
- Min Hee Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including structures for reduced leakage curr...
- Patent number 10,361,205
- Issue date Jul 23, 2019
- Samsung Electronics Co., Ltd.
- Min Hee Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,035,394
- Issue date May 19, 2015
- Samsung Electronics Co. Ltd.
- Seung-Uk Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitorless memory device
- Patent number 8,941,173
- Issue date Jan 27, 2015
- Samsung Electronics Co., Ltd.
- Seung-Uk Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having lightly doped channel impurity regions
- Patent number 8,742,473
- Issue date Jun 3, 2014
- Samsung Electronics Co., Ltd.
- Seung-Uk Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device using deuterium annealing
- Patent number 8,669,165
- Issue date Mar 11, 2014
- Samsung Electronics Co., Ltd.
- Seung-Uk Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,648,402
- Issue date Feb 11, 2014
- Samsung Electronics, Co., Ltd.
- Seung-Uk Han
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210126098
- Publication date Apr 29, 2021
- Samsung Electronics Co., Ltd.
- Jee-Sun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING STRUCTURES FOR REDUCED LEAKAGE CURR...
- Publication number 20190296017
- Publication date Sep 26, 2019
- Samsung Electronics Co., Ltd.
- Min Hee Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING STRUCTURES FOR REDUCED LEAKAGE CURR...
- Publication number 20180301456
- Publication date Oct 18, 2018
- Samsung Electronics Co., Ltd.
- Min Hee Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING THE SAME
- Publication number 20140264568
- Publication date Sep 18, 2014
- Samsung Electronics Co., Ltd.
- Jun-Soo KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20140117460
- Publication date May 1, 2014
- SEUNG-UK HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITORLESS MEMORY DEVICE
- Publication number 20130248980
- Publication date Sep 26, 2013
- Samsung Electronics Co., Ltd.
- Seung-Uk HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20130037888
- Publication date Feb 14, 2013
- Samsung Electronics Co., Ltd.
- SEUNG-UK HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING DEUTERIUM ANNEALING
- Publication number 20120142160
- Publication date Jun 7, 2012
- Samsung Electronics Co., Ltd.
- Seung-Uk Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices Having Lightly Doped Channel Impurity Regions
- Publication number 20120098072
- Publication date Apr 26, 2012
- Seung-Uk Han
- H01 - BASIC ELECTRIC ELEMENTS

Nam-Ho Jeon

Person

Patents Grantslast 30 patents

Semiconductor device having a gate electrode in a trench

Semiconductor devices including structures for reduced leakage curr...

Semiconductor devices including structures for reduced leakage curr...

Semiconductor device

Capacitorless memory device

Semiconductor devices having lightly doped channel impurity regions

Method of fabricating semiconductor device using deuterium annealing

Semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES INCLUDING STRUCTURES FOR REDUCED LEAKAGE CURR...

SEMICONDUCTOR DEVICES INCLUDING STRUCTURES FOR REDUCED LEAKAGE CURR...

SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

CAPACITORLESS MEMORY DEVICE

SEMICONDUCTOR DEVICE

METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING DEUTERIUM ANNEALING

Semiconductor Devices Having Lightly Doped Channel Impurity Regions