Nam-Hun Kim

Person

Cupertino, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Horizontal gate-all-around device nanowire air gap spacer formation
- Patent number 11,848,369
- Issue date Dec 19, 2023
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around device nanowire air gap spacer formation
- Patent number 11,282,936
- Issue date Mar 22, 2022
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around and FinFET device isolation
- Patent number 11,145,761
- Issue date Oct 12, 2021
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming device isolation for semiconductor applications
- Patent number 11,018,223
- Issue date May 25, 2021
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around device nanowire air gap spacer formation
- Patent number 10,777,650
- Issue date Sep 15, 2020
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around and FinFET device isolation
- Patent number 10,490,666
- Issue date Nov 26, 2019
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating nanowire for semiconductor applications
- Patent number 10,269,571
- Issue date Apr 23, 2019
- Applied Materials, Inc.
- Keith Tatseun Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating junctions and spacers for horizontal gate al...
- Patent number 10,177,227
- Issue date Jan 8, 2019
- Applied Materials, Inc.
- Naomi Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating air-gap spacer for N7/N5 finFET and beyond
- Patent number 9,960,275
- Issue date May 1, 2018
- Applied Materials, Inc.
- Chih-Yang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around and FinFET device isolation
- Patent number 9,865,735
- Issue date Jan 9, 2018
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Treatment and evaluation of a substrate processing chamber
- Patent number 6,783,626
- Issue date Aug 31, 2004
- Nam-Hun Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of etching silicon nitride spacers with high selectivity rel...
- Patent number 6,756,313
- Issue date Jun 29, 2004
- Jinhan Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Construction of built-up structures on the surface of patterned mas...
- Patent number 6,620,575
- Issue date Sep 16, 2003
- Applied Materials, Inc.
- Nam-Hun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma etching of silicon using fluorinated gas mixtures
- Patent number 6,583,063
- Issue date Jun 24, 2003
- Applied Materials, Inc.
- Anisul Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Storage poly process without carbon contamination
- Patent number 6,372,151
- Issue date Apr 16, 2002
- Applied Materials, Inc.
- Taeho Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma etching of polysilicon using fluorinated gas mixtures
- Patent number 6,312,616
- Issue date Nov 6, 2001
- Applied Materials, Inc.
- Jeffrey Chinn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for etching a trench having rounded top and bottom corners i...
- Patent number 6,235,643
- Issue date May 22, 2001
- Applied Materials, Inc.
- David Mui
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HORIZONTAL GATE-ALL-AROUND DEVICE NANOWIRE AIR GAP SPACER FORMATION
- Publication number 20220173220
- Publication date Jun 2, 2022
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORIZONTAL GATE ALL AROUND DEVICE NANOWIRE AIR GAP SPACER FORMATION
- Publication number 20200411656
- Publication date Dec 31, 2020
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING DEVICE ISOLATION FOR SEMICONDUCTOR APPLICATIONS
- Publication number 20200335583
- Publication date Oct 22, 2020
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION
- Publication number 20200035822
- Publication date Jan 30, 2020
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING NANOWIRE FOR SEMICONDUCTOR APPLICATIONS
- Publication number 20190019681
- Publication date Jan 17, 2019
- Applied Materials, Inc.
- Keith Tatseun WONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING AIR-GAP SPACER FOR N7/N5 FINFET AND BEYOND
- Publication number 20180122945
- Publication date May 3, 2018
- Applied Materials, Inc.
- Chih-Yang CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION
- Publication number 20180061978
- Publication date Mar 1, 2018
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORIZONTAL GATE ALL AROUND DEVICE NANOWIRE AIR GAP SPACER FORMATION
- Publication number 20170309719
- Publication date Oct 26, 2017
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING NANOWIRES FOR HORIZONTAL GATE ALL AROUND DEV...
- Publication number 20170194430
- Publication date Jul 6, 2017
- Applied Materials, Inc.
- Bingxi Sun WOOD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION
- Publication number 20160336405
- Publication date Nov 17, 2016
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of etching silicon nitride spacers with high selectivity rel...
- Publication number 20030207585
- Publication date Nov 6, 2003
- APPLIED MATERIALS, INC.
- Jinhan Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for etching tungsten using NF3 and Cl2
- Publication number 20030092280
- Publication date May 15, 2003
- APPLIED MATERIALS, INC.
- Gene H. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Treatment and evaluation of a substrate processing chamber
- Publication number 20030052083
- Publication date Mar 20, 2003
- Nam-Hun Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Construction of built-up structures on the surface of patterned mas...
- Publication number 20010041309
- Publication date Nov 15, 2001
- Applied Materials, Inc.
- Nam-Hun Kim
- H01 - BASIC ELECTRIC ELEMENTS

Nam-Hun Kim

Person

Patents Grantslast 30 patents

Horizontal gate-all-around device nanowire air gap spacer formation

Horizontal gate all around device nanowire air gap spacer formation

Horizontal gate all around and FinFET device isolation

Methods for forming device isolation for semiconductor applications

Horizontal gate all around device nanowire air gap spacer formation

Horizontal gate all around and FinFET device isolation

Methods for fabricating nanowire for semiconductor applications

Method for fabricating junctions and spacers for horizontal gate al...

Method of fabricating air-gap spacer for N7/N5 finFET and beyond

Horizontal gate all around and FinFET device isolation

Treatment and evaluation of a substrate processing chamber

Method of etching silicon nitride spacers with high selectivity rel...

Construction of built-up structures on the surface of patterned mas...

Plasma etching of silicon using fluorinated gas mixtures

Storage poly process without carbon contamination

Plasma etching of polysilicon using fluorinated gas mixtures

Method for etching a trench having rounded top and bottom corners i...

Patents Applicationslast 30 patents

HORIZONTAL GATE-ALL-AROUND DEVICE NANOWIRE AIR GAP SPACER FORMATION

HORIZONTAL GATE ALL AROUND DEVICE NANOWIRE AIR GAP SPACER FORMATION

METHODS FOR FORMING DEVICE ISOLATION FOR SEMICONDUCTOR APPLICATIONS

HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION

METHODS FOR FABRICATING NANOWIRE FOR SEMICONDUCTOR APPLICATIONS

METHOD OF FABRICATING AIR-GAP SPACER FOR N7/N5 FINFET AND BEYOND

HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION

HORIZONTAL GATE ALL AROUND DEVICE NANOWIRE AIR GAP SPACER FORMATION

METHOD FOR FABRICATING NANOWIRES FOR HORIZONTAL GATE ALL AROUND DEV...

HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION

Method of etching silicon nitride spacers with high selectivity rel...

Method for etching tungsten using NF3 and Cl2

Treatment and evaluation of a substrate processing chamber

Construction of built-up structures on the surface of patterned mas...