Nan Wu

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Floating-gate devices in high voltage applications
- Patent number 11,610,999
- Issue date Mar 21, 2023
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- Alban Zaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Co-integrated high voltage (HV) and medium voltage (MV) field effec...
- Patent number 11,495,660
- Issue date Nov 8, 2022
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- Nan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Co-integrated high voltage (HV) and medium voltage (MV) field effec...
- Patent number 11,289,598
- Issue date Mar 29, 2022
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- Nan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including active regions in RAM areas with de...
- Patent number 11,257,672
- Issue date Feb 22, 2022
- GLOBALFOUNDRIES U.S. INC.
- Nan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a memory cell and method of forming the...
- Patent number 10,784,263
- Issue date Sep 22, 2020
- Micron Technology, Inc.
- Nan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuits constructed from stacked field-effect transistors
- Patent number 10,727,236
- Issue date Jul 28, 2020
- GLOBALFOUNDRIES Inc.
- Nan Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having a memory cell and method of forming the...
- Patent number 10,388,657
- Issue date Aug 20, 2019
- Micron Technology, Inc.
- Nan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuits constructed from stacked field-effect transistors
- Patent number 10,276,453
- Issue date Apr 30, 2019
- GLOBALFOUNDRIES Inc.
- Nan Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIELD EFFECT TRANSISTOR WITH ADJUSTABLE EFFECTIVE GATE LENGTH
- Publication number 20240097029
- Publication date Mar 21, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Nan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATED HIGH VOLTAGE (HV) AND MEDIUM VOLTAGE (MV) FIELD EFFEC...
- Publication number 20220149152
- Publication date May 12, 2022
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- Nan WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOATING-GATE DEVICES IN HIGH VOLTAGE APPLICATIONS
- Publication number 20210391457
- Publication date Dec 16, 2021
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- Alban ZAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATED HIGH VOLTAGE (HV) AND MEDIUM VOLTAGE (MV) FIELD EFFEC...
- Publication number 20210328055
- Publication date Oct 21, 2021
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- Nan WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUITS CONSTRUCTED FROM STACKED FIELD-EFFECT TRANSISTORS
- Publication number 20200203355
- Publication date Jun 25, 2020
- GLOBALFOUNDRIES INC.
- Nan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING ACTIVE REGIONS IN RAM AREAS WITH DE...
- Publication number 20190348280
- Publication date Nov 14, 2019
- GLOBALFOUNDRIES INC.
- Nan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Memory Cell and Method of Forming the...
- Publication number 20190273082
- Publication date Sep 5, 2019
- Micron Technology, Inc.
- Nan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Memory Cell and Method of Forming the...
- Publication number 20170278848
- Publication date Sep 28, 2017
- Micron Technology, Inc.
- Nan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD FOR AN INTEGRATED CIRCUIT STRUCTURE COMPRISING...
- Publication number 20090176368
- Publication date Jul 9, 2009
- Nan Wu
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Floating-gate devices in high voltage applications

Co-integrated high voltage (HV) and medium voltage (MV) field effec...

Co-integrated high voltage (HV) and medium voltage (MV) field effec...

Semiconductor devices including active regions in RAM areas with de...

Semiconductor device having a memory cell and method of forming the...

Circuits constructed from stacked field-effect transistors

Semiconductor device having a memory cell and method of forming the...

Circuits constructed from stacked field-effect transistors

Patents Applicationslast 30 patents

FIELD EFFECT TRANSISTOR WITH ADJUSTABLE EFFECTIVE GATE LENGTH

CO-INTEGRATED HIGH VOLTAGE (HV) AND MEDIUM VOLTAGE (MV) FIELD EFFEC...

FLOATING-GATE DEVICES IN HIGH VOLTAGE APPLICATIONS

CO-INTEGRATED HIGH VOLTAGE (HV) AND MEDIUM VOLTAGE (MV) FIELD EFFEC...

CIRCUITS CONSTRUCTED FROM STACKED FIELD-EFFECT TRANSISTORS

SEMICONDUCTOR DEVICES INCLUDING ACTIVE REGIONS IN RAM AREAS WITH DE...

Semiconductor Device Having a Memory Cell and Method of Forming the...

Semiconductor Device Having a Memory Cell and Method of Forming the...

MANUFACTURING METHOD FOR AN INTEGRATED CIRCUIT STRUCTURE COMPRISING...