Nanbo Gong

Person

White Plains, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transfer length phase change material (PCM) based bridge cell
- Patent number 12,150,392
- Issue date Nov 19, 2024
- International Business Machines Corporation
- Guy M. Cohen
Information Patent Grant
Physically unclonable function based on a phase change material array
- Patent number 12,099,616
- Issue date Sep 24, 2024
- International Business Machines Corporation
- Guy M. Cohen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Phase-change material-based XOR logic gates
- Patent number 12,058,943
- Issue date Aug 6, 2024
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Grant
FeFET unit cells for neuromorphic computing
- Patent number 12,026,605
- Issue date Jul 2, 2024
- International Business Machines Corporation
- Nanbo Gong
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile analog resistive memory cells implementing ferroelectr...
- Patent number 11,948,618
- Issue date Apr 2, 2024
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Grant
Temperature-assisted device with integrated thin-film heater
- Patent number 11,942,388
- Issue date Mar 26, 2024
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gates having embedded metal-insulator-metal capacitors
- Patent number 11,929,404
- Issue date Mar 12, 2024
- International Business Machines Corporation
- Alexander Reznicek
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
FeFET with double gate structure
- Patent number 11,923,458
- Issue date Mar 5, 2024
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile phase change material logic device
- Patent number 11,915,751
- Issue date Feb 27, 2024
- International Business Machines Corporation
- Guy M. Cohen
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory cell with ovonic threshold switch
- Patent number 11,910,734
- Issue date Feb 20, 2024
- International Business Machines Corporation
- Nanbo Gong
Information Patent Grant
ReRAM analog PUF using filament location
- Patent number 11,864,474
- Issue date Jan 2, 2024
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random-access memory random number generator
- Patent number 11,856,798
- Issue date Dec 26, 2023
- International Business Machines Corporation
- Guy M. Cohen
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Physical unclonable function device with phase change
- Patent number 11,844,293
- Issue date Dec 12, 2023
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low program voltage flash memory cells with embedded heater in the...
- Patent number 11,818,886
- Issue date Nov 14, 2023
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Grant
PCM cell with resistance drift correction
- Patent number 11,818,971
- Issue date Nov 14, 2023
- International Business Machines Corporation
- Heng Wu
Information Patent Grant
Phase change memory with conductive bridge filament
- Patent number 11,805,714
- Issue date Oct 31, 2023
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Grant
Drift mitigation for resistive memory devices
- Patent number 11,805,713
- Issue date Oct 31, 2023
- International Business Machines Corporation
- Guy M. Cohen
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric field effect transistor for implementation of decisio...
- Patent number 11,790,243
- Issue date Oct 17, 2023
- International Business Machines Corporation
- Nanbo Gong
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile analog resistive memory cells implementing ferroelectr...
- Patent number 11,727,977
- Issue date Aug 15, 2023
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Grant
Using ferroelectric field-effect transistors (FeFETs) as capacitive...
- Patent number 11,688,457
- Issue date Jun 27, 2023
- International Business Machines Corporation
- Nanbo Gong
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Phase change memory cell with ovonic threshold switch
- Patent number 11,665,983
- Issue date May 30, 2023
- International Business Machines Corporation
- Nanbo Gong
Information Patent Grant
Phase-change material-based XOR logic gates
- Patent number 11,653,578
- Issue date May 16, 2023
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile tunable capacitive processing unit
- Patent number 11,647,684
- Issue date May 9, 2023
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-memory resistive random access memory XOR logic using compliment...
- Patent number 11,631,809
- Issue date Apr 18, 2023
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Grant
Temperature assisted programming of flash memory for neuromorphic c...
- Patent number 11,631,462
- Issue date Apr 18, 2023
- International Business Machines Corporation
- Nanbo Gong
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
PCM cell with resistance drift correction
- Patent number 11,563,173
- Issue date Jan 24, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level cell threshold voltage operation of one-selector-one-re...
- Patent number 11,557,342
- Issue date Jan 17, 2023
- International Business Machines Corporation
- Nanbo Gong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-voltage flash memory integrated with a vertical field effect tr...
- Patent number 11,456,308
- Issue date Sep 27, 2022
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory erasure using proximity heaters
- Patent number 11,437,102
- Issue date Sep 6, 2022
- International Business Machines Corporation
- Guy M. Cohen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Multi-level ferroelectric field-effect transistor devices
- Patent number 11,430,510
- Issue date Aug 30, 2022
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
PARALLEL COMPUTATION ON INPUT VECTORS BY ORTHOGONAL REPRESENTATION
- Publication number 20240338214
- Publication date Oct 10, 2024
- International Business Machines Corporation
- Guy M. Cohen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NON-VOLATILE MEMORY-BASED ACTIVATION FUNCTION
- Publication number 20240202512
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Nanbo Gong
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PIEZOELECTRIC MEMORY
- Publication number 20240147873
- Publication date May 2, 2024
- International Business Machines Corporation
- Guy M. Cohen
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY DEVICE ERASURE
- Publication number 20240088065
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Nanbo Gong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCALIZED ANNEAL OF FERROELECTRIC DIELECTRIC
- Publication number 20240074207
- Publication date Feb 29, 2024
- International Business Machines Corporation
- Nanbo Gong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOLID-STATE SWITCH
- Publication number 20230320105
- Publication date Oct 5, 2023
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL WITH OVONIC THRESHOLD SWITCH
- Publication number 20230309422
- Publication date Sep 28, 2023
- International Business Machines Corporation
- Nanbo Gong
Information Patent Application
RERAM ANALOG PUF USING FILAMENT LOCATION
- Publication number 20230301212
- Publication date Sep 21, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY RANDOM NUMBER GENERATOR
- Publication number 20230284462
- Publication date Sep 7, 2023
- International Business Machines Corporation
- Guy M. Cohen
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE ANALOG RESISTIVE MEMORY CELLS IMPLEMENTING FERROELECTR...
- Publication number 20230274773
- Publication date Aug 31, 2023
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Application
RRAM FILAMENT LOCATION FOR PHYSICALLY UNCLONABLE FUNCTION
- Publication number 20230268292
- Publication date Aug 24, 2023
- International Business Machines Corporation
- Nanbo Gong
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PHASE-CHANGE MATERIAL-BASED XOR LOGIC GATES
- Publication number 20230189669
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Application
GLOBAL HEATER FOR PHASE CHANGE MEMORY
- Publication number 20230180644
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Nanbo Gong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRIFT MITIGATION FOR RESISTIVE MEMORY DEVICES
- Publication number 20230180643
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHYSICALLY UNCLONABLE FUNCTION BASED ON A PHASE CHANGE MATERIAL ARRAY
- Publication number 20230153444
- Publication date May 18, 2023
- International Business Machines Corporation
- Guy M. Cohen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PHYSICAL UNCLONABLE FUNCTION DEVICE WITH PHASE CHANGE
- Publication number 20230108998
- Publication date Apr 6, 2023
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW PROGRAM VOLTAGE FLASH MEMORY CELLS WITH EMBEDDED HEATER IN THE...
- Publication number 20230097904
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE PHASE CHANGE MATERIAL LOGIC DEVICE
- Publication number 20230083308
- Publication date Mar 16, 2023
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATES HAVING EMBEDDED METAL-INSULATOR-METAL CAPACITORS
- Publication number 20230065091
- Publication date Mar 2, 2023
- International Business Machines Corporation
- Alexander Reznicek
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PCM CELL WITH RESISTANCE DRIFT CORRECTION
- Publication number 20230047004
- Publication date Feb 16, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIKE-TIMING-DEPENDENT PLASTICITY USING INVERSE RESISTIVITY PHASE-C...
- Publication number 20230040983
- Publication date Feb 9, 2023
- International Business Machines Corporation
- Guy M. Cohen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FEFET WITH DOUBLE GATE STRUCTURE
- Publication number 20220393031
- Publication date Dec 8, 2022
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEMPERATURE-ASSISTED DEVICE WITH INTEGRATED THIN-FILM HEATER
- Publication number 20220336312
- Publication date Oct 20, 2022
- International Business Machines Corporation
- Bahman Hekmatshoartabari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE TUNABLE CAPACITIVE PROCESSING UNIT
- Publication number 20220320428
- Publication date Oct 6, 2022
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ERASURE USING PROXIMITY HEATERS
- Publication number 20220284958
- Publication date Sep 8, 2022
- International Business Machines Corporation
- Guy M. Cohen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
USING FERROELECTRIC FIELD-EFFECT TRANSISTORS (FeFETs) AS CAPACITIVE...
- Publication number 20220208259
- Publication date Jun 30, 2022
- International Business Machines Corporation
- Nanbo Gong
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TRANSFER LENGTH PHASE CHANGE MATERIAL (PCM) BASED BRIDGE CELL
- Publication number 20220199899
- Publication date Jun 23, 2022
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LEVEL FERROELECTRIC FIELD-EFFECT TRANSISTOR DEVICES
- Publication number 20220189546
- Publication date Jun 16, 2022
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE ANALOG RESISTIVE MEMORY CELLS IMPLEMENTING FERROELECTR...
- Publication number 20220189526
- Publication date Jun 16, 2022
- International Business Machines Corporation
- Nanbo Gong
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY CELL WITH OVONIC THRESHOLD SWITCH
- Publication number 20220190238
- Publication date Jun 16, 2022
- International Business Machines Corporation
- Nanbo Gong
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Transfer length phase change material (PCM) based bridge cell

Physically unclonable function based on a phase change material array

Phase-change material-based XOR logic gates

FeFET unit cells for neuromorphic computing

Non-volatile analog resistive memory cells implementing ferroelectr...

Temperature-assisted device with integrated thin-film heater

Transistor gates having embedded metal-insulator-metal capacitors

FeFET with double gate structure

Nonvolatile phase change material logic device

Phase change memory cell with ovonic threshold switch

ReRAM analog PUF using filament location

Resistive random-access memory random number generator

Physical unclonable function device with phase change

Low program voltage flash memory cells with embedded heater in the...

PCM cell with resistance drift correction

Phase change memory with conductive bridge filament

Drift mitigation for resistive memory devices

Ferroelectric field effect transistor for implementation of decisio...

Non-volatile analog resistive memory cells implementing ferroelectr...

Using ferroelectric field-effect transistors (FeFETs) as capacitive...

Phase change memory cell with ovonic threshold switch

Phase-change material-based XOR logic gates

Nonvolatile tunable capacitive processing unit

In-memory resistive random access memory XOR logic using compliment...

Temperature assisted programming of flash memory for neuromorphic c...

PCM cell with resistance drift correction

Multi-level cell threshold voltage operation of one-selector-one-re...

Low-voltage flash memory integrated with a vertical field effect tr...

Memory erasure using proximity heaters

Multi-level ferroelectric field-effect transistor devices

Patents Applicationslast 30 patents

PARALLEL COMPUTATION ON INPUT VECTORS BY ORTHOGONAL REPRESENTATION

NON-VOLATILE MEMORY-BASED ACTIVATION FUNCTION

PIEZOELECTRIC MEMORY

FERROELECTRIC MEMORY DEVICE ERASURE

LOCALIZED ANNEAL OF FERROELECTRIC DIELECTRIC

SOLID-STATE SWITCH

PHASE CHANGE MEMORY CELL WITH OVONIC THRESHOLD SWITCH

RERAM ANALOG PUF USING FILAMENT LOCATION

RESISTIVE RANDOM-ACCESS MEMORY RANDOM NUMBER GENERATOR

NON-VOLATILE ANALOG RESISTIVE MEMORY CELLS IMPLEMENTING FERROELECTR...

RRAM FILAMENT LOCATION FOR PHYSICALLY UNCLONABLE FUNCTION

PHASE-CHANGE MATERIAL-BASED XOR LOGIC GATES

GLOBAL HEATER FOR PHASE CHANGE MEMORY

DRIFT MITIGATION FOR RESISTIVE MEMORY DEVICES

PHYSICALLY UNCLONABLE FUNCTION BASED ON A PHASE CHANGE MATERIAL ARRAY

PHYSICAL UNCLONABLE FUNCTION DEVICE WITH PHASE CHANGE

LOW PROGRAM VOLTAGE FLASH MEMORY CELLS WITH EMBEDDED HEATER IN THE...

NONVOLATILE PHASE CHANGE MATERIAL LOGIC DEVICE

TRANSISTOR GATES HAVING EMBEDDED METAL-INSULATOR-METAL CAPACITORS

PCM CELL WITH RESISTANCE DRIFT CORRECTION

SPIKE-TIMING-DEPENDENT PLASTICITY USING INVERSE RESISTIVITY PHASE-C...

FEFET WITH DOUBLE GATE STRUCTURE

TEMPERATURE-ASSISTED DEVICE WITH INTEGRATED THIN-FILM HEATER

NONVOLATILE TUNABLE CAPACITIVE PROCESSING UNIT

MEMORY ERASURE USING PROXIMITY HEATERS

USING FERROELECTRIC FIELD-EFFECT TRANSISTORS (FeFETs) AS CAPACITIVE...

TRANSFER LENGTH PHASE CHANGE MATERIAL (PCM) BASED BRIDGE CELL

MULTI-LEVEL FERROELECTRIC FIELD-EFFECT TRANSISTOR DEVICES

NON-VOLATILE ANALOG RESISTIVE MEMORY CELLS IMPLEMENTING FERROELECTR...

PHASE CHANGE MEMORY CELL WITH OVONIC THRESHOLD SWITCH