Nandakumar Mahalingam

Person

Dallas, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with diffusion suppression and LDD implants an...
- Patent number 12,154,901
- Issue date Nov 26, 2024
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Damage implantation of cap layer
- Patent number 12,154,987
- Issue date Nov 26, 2024
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High resistance poly resistor
- Patent number 12,107,117
- Issue date Oct 1, 2024
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon, nitrogen and/or fluorine co-implants for low resistance tra...
- Patent number 12,015,057
- Issue date Jun 18, 2024
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-rotation gate-edge diode leakage reduction for MOS transistors
- Patent number 12,009,423
- Issue date Jun 11, 2024
- Texas Instruments Incorporated
- Brian Edward Hornung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel stop and well dopant migration control implant for reduced...
- Patent number 11,869,956
- Issue date Jan 9, 2024
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing cross-wafer variability for minimum width resistors
- Patent number 11,764,111
- Issue date Sep 19, 2023
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with low noise transistor and low temperature...
- Patent number 11,676,961
- Issue date Jun 13, 2023
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with diffusion suppression and LDD implants an...
- Patent number 11,616,058
- Issue date Mar 28, 2023
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High resistance poly resistor
- Patent number 11,588,008
- Issue date Feb 21, 2023
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate implant for reduced resistance temperature coefficient variabi...
- Patent number 11,581,399
- Issue date Feb 14, 2023
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bent gate logic device
- Patent number 11,532,629
- Issue date Dec 20, 2022
- Texas Instmments Incorporated
- Nandakumar Mahalingam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable implant and wafer-level feed-forward for dopant dose optim...
- Patent number 11,455,452
- Issue date Sep 27, 2022
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Dopant anneal with stabilization step for IC with matched devices
- Patent number 11,205,578
- Issue date Dec 21, 2021
- Texas Instruments Incorporated
- Brian K. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric spaced diode
- Patent number 11,152,350
- Issue date Oct 19, 2021
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric spaced diode
- Patent number 11,011,508
- Issue date May 18, 2021
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded memory with enhanced channel stop implants
- Patent number 10,593,680
- Issue date Mar 17, 2020
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compensated well ESD diodes with reduced capacitance
- Patent number 10,497,695
- Issue date Dec 3, 2019
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fringe capacitance reduction for replacement gate CMOS
- Patent number 10,439,041
- Issue date Oct 8, 2019
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive spline for metal gates
- Patent number 10,276,684
- Issue date Apr 30, 2019
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy contacts to mitigate plasma charging damage to gate dielectrics
- Patent number 10,249,621
- Issue date Apr 2, 2019
- Texas Instruments Incorporated
- Mark Robert Visokay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially recessed channel core transistors in replacement gate flow
- Patent number 10,115,638
- Issue date Oct 30, 2018
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single mask level including a resistor and a through-gate implant
- Patent number 10,026,730
- Issue date Jul 17, 2018
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid high-k first and high-k last replacement gate process
- Patent number 9,960,162
- Issue date May 1, 2018
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with deep Nwell implanted through the gate
- Patent number 9,865,599
- Issue date Jan 9, 2018
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded memory with enhanced channel stop implants
- Patent number 9,853,034
- Issue date Dec 26, 2017
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fringe capacitance reduction for replacement gate CMOS
- Patent number 9,780,192
- Issue date Oct 3, 2017
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single mask level including a resistor and a through-gate implant
- Patent number 9,761,581
- Issue date Sep 12, 2017
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compensated well ESD diodes with reduced capacitance
- Patent number 9,589,959
- Issue date Mar 7, 2017
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diodes for replacement metal gate integrated circuits
- Patent number 9,564,427
- Issue date Feb 7, 2017
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TWO-ROTATION GATE-EDGE DIODE LEAKAGE REDUCTION FOR MOS
- Publication number 20240304723
- Publication date Sep 12, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Brian Edward Hornung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON, NITROGEN AND/OR FLUORINE CO-IMPLANTS FOR LOW RESISTANCE TRA...
- Publication number 20240290844
- Publication date Aug 29, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL STOP AND WELL DOPANT MIGRATION CONTROL IMPLANT FOR REDUCED...
- Publication number 20240088262
- Publication date Mar 14, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION STRUCTURE WITH NITRIDE PULLBACK BY IMPLANT...
- Publication number 20240006230
- Publication date Jan 4, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam NANDAKUMAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING CROSS-WAFER VARIABILITY FOR MINIMUM WIDTH RESISTORS
- Publication number 20230386923
- Publication date Nov 30, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADVANCED POLY RESISTOR AND CMOS TRANSISTOR
- Publication number 20230326954
- Publication date Oct 12, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH LOW NOISE TRANSISTOR AND LOW TEMPERATURE...
- Publication number 20230290775
- Publication date Sep 14, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SMALL GRAIN SIZE POLYSILICON ENGINEERING FOR THRESHOLD VOLTAGE MISM...
- Publication number 20230245891
- Publication date Aug 3, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Bhaskar Srinivasan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DIFFUSION SUPPRESSION AND LDD IMPLANTS AN...
- Publication number 20230230975
- Publication date Jul 20, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE IMPLANT FOR REDUCED RESISTANCE TEMPERATURE COEFFICIENT VARIABI...
- Publication number 20230154971
- Publication date May 18, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RESISTANCE POLY RESISTOR
- Publication number 20230141752
- Publication date May 11, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL STOP AND WELL DOPANT MIGRATION CONTROL IMPLANT FOR REDUCED...
- Publication number 20230095534
- Publication date Mar 30, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BENT GATE LOGIC DEVICE
- Publication number 20220399337
- Publication date Dec 15, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Nandakumar Mahalingam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION SCHEME TO BUILD RESISTOR, CAPACITOR, EFUSE USING SILICO...
- Publication number 20220375856
- Publication date Nov 24, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-ROTATION GATE-EDGE DIODE LEAKAGE REDUCTION FOR MOS TRANSISTORS
- Publication number 20220209012
- Publication date Jun 30, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Brian Edward Hornung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON, NITROGEN AND/OR FLUORINE CO-IMPLANTS FOR LOW RESISTANCE TRA...
- Publication number 20220208973
- Publication date Jun 30, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DIFFUSION SUPPRESSION AND LDD IMPLANTS AN...
- Publication number 20220189954
- Publication date Jun 16, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH LOW NOISE TRANSISTOR AND LOW TEMPERATURE...
- Publication number 20220139907
- Publication date May 5, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DAMAGE IMPLANTATION OF CAP LAYER
- Publication number 20220102553
- Publication date Mar 31, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE IMPLANT FOR REDUCED RESISTANCE TEMPERATURE COEFFICIENT VARIABI...
- Publication number 20210408221
- Publication date Dec 30, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH-GATE CO-IMPLANT SPECIES TO CONTROL DOPANT PROFILE IN TRANSI...
- Publication number 20210193467
- Publication date Jun 24, 2021
- TEXAS INSTRUMENTS INCORPORATED
- MAHALINGAM NANDAKUMAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING CROSS-WAFER VARIABILITY FOR MINIMUM WIDTH RESISTORS
- Publication number 20210125872
- Publication date Apr 29, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE IMPLANT AND WAFER-LEVEL FEED-FORWARD FOR DOPANT DOSE OPTIM...
- Publication number 20210089694
- Publication date Mar 25, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
HIGH RESISTANCE POLY RESISTOR
- Publication number 20200279905
- Publication date Sep 3, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC SPACED DIODE
- Publication number 20200194422
- Publication date Jun 18, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dielectric Spaced Diode
- Publication number 20200194423
- Publication date Jun 18, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPANT ANNEAL WITH STABILIZATION STEP FOR IC WITH MATCHED DEVICES
- Publication number 20190115226
- Publication date Apr 18, 2019
- TEXAS INSTRUMENTS INCORPORATED
- BRIAN K. KIRKPATRICK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUMMY CONTACTS TO MITIGATE PLASMA CHARGING DAMAGE TO GATE DIELECTRICS
- Publication number 20180175023
- Publication date Jun 21, 2018
- TEXAS INSTRUMENTS INCORPORATED
- MARK ROBERT VISOKAY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED MEMORY WITH ENHANCED CHANNEL STOP IMPLANTS
- Publication number 20180090503
- Publication date Mar 29, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Damage Implantation of a Cap Layer
- Publication number 20170365715
- Publication date Dec 21, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS

Nandakumar Mahalingam

Person

Patents Grantslast 30 patents

Semiconductor device with diffusion suppression and LDD implants an...

Damage implantation of cap layer

High resistance poly resistor

Carbon, nitrogen and/or fluorine co-implants for low resistance tra...

Two-rotation gate-edge diode leakage reduction for MOS transistors

Channel stop and well dopant migration control implant for reduced...

Reducing cross-wafer variability for minimum width resistors

Semiconductor device with low noise transistor and low temperature...

Semiconductor device with diffusion suppression and LDD implants an...

High resistance poly resistor

Gate implant for reduced resistance temperature coefficient variabi...

Bent gate logic device

Variable implant and wafer-level feed-forward for dopant dose optim...

Dopant anneal with stabilization step for IC with matched devices

Dielectric spaced diode

Dielectric spaced diode

Embedded memory with enhanced channel stop implants

Compensated well ESD diodes with reduced capacitance

Fringe capacitance reduction for replacement gate CMOS

Conductive spline for metal gates

Dummy contacts to mitigate plasma charging damage to gate dielectrics

Partially recessed channel core transistors in replacement gate flow

Single mask level including a resistor and a through-gate implant

Hybrid high-k first and high-k last replacement gate process

Transistor with deep Nwell implanted through the gate

Embedded memory with enhanced channel stop implants

Fringe capacitance reduction for replacement gate CMOS

Single mask level including a resistor and a through-gate implant

Compensated well ESD diodes with reduced capacitance

Schottky diodes for replacement metal gate integrated circuits

Patents Applicationslast 30 patents

TWO-ROTATION GATE-EDGE DIODE LEAKAGE REDUCTION FOR MOS

CARBON, NITROGEN AND/OR FLUORINE CO-IMPLANTS FOR LOW RESISTANCE TRA...

CHANNEL STOP AND WELL DOPANT MIGRATION CONTROL IMPLANT FOR REDUCED...

SHALLOW TRENCH ISOLATION STRUCTURE WITH NITRIDE PULLBACK BY IMPLANT...

REDUCING CROSS-WAFER VARIABILITY FOR MINIMUM WIDTH RESISTORS

ADVANCED POLY RESISTOR AND CMOS TRANSISTOR

SEMICONDUCTOR DEVICE WITH LOW NOISE TRANSISTOR AND LOW TEMPERATURE...

SMALL GRAIN SIZE POLYSILICON ENGINEERING FOR THRESHOLD VOLTAGE MISM...

SEMICONDUCTOR DEVICE WITH DIFFUSION SUPPRESSION AND LDD IMPLANTS AN...

GATE IMPLANT FOR REDUCED RESISTANCE TEMPERATURE COEFFICIENT VARIABI...

HIGH RESISTANCE POLY RESISTOR

CHANNEL STOP AND WELL DOPANT MIGRATION CONTROL IMPLANT FOR REDUCED...

BENT GATE LOGIC DEVICE

INTEGRATION SCHEME TO BUILD RESISTOR, CAPACITOR, EFUSE USING SILICO...

TWO-ROTATION GATE-EDGE DIODE LEAKAGE REDUCTION FOR MOS TRANSISTORS

CARBON, NITROGEN AND/OR FLUORINE CO-IMPLANTS FOR LOW RESISTANCE TRA...

SEMICONDUCTOR DEVICE WITH DIFFUSION SUPPRESSION AND LDD IMPLANTS AN...

SEMICONDUCTOR DEVICE WITH LOW NOISE TRANSISTOR AND LOW TEMPERATURE...

DAMAGE IMPLANTATION OF CAP LAYER

GATE IMPLANT FOR REDUCED RESISTANCE TEMPERATURE COEFFICIENT VARIABI...

THROUGH-GATE CO-IMPLANT SPECIES TO CONTROL DOPANT PROFILE IN TRANSI...

REDUCING CROSS-WAFER VARIABILITY FOR MINIMUM WIDTH RESISTORS

VARIABLE IMPLANT AND WAFER-LEVEL FEED-FORWARD FOR DOPANT DOSE OPTIM...

HIGH RESISTANCE POLY RESISTOR

DIELECTRIC SPACED DIODE

Dielectric Spaced Diode

DOPANT ANNEAL WITH STABILIZATION STEP FOR IC WITH MATCHED DEVICES

DUMMY CONTACTS TO MITIGATE PLASMA CHARGING DAMAGE TO GATE DIELECTRICS

EMBEDDED MEMORY WITH ENHANCED CHANNEL STOP IMPLANTS

Damage Implantation of a Cap Layer