Naohiro HOSODA

Person

Yokkaichi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional memory device containing amorphous and crystallin...
- Patent number 11,894,298
- Issue date Feb 6, 2024
- SanDisk Technologies LLC
- Masanori Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory die with source side of three-dimensional memory array bonde...
- Patent number 11,417,621
- Issue date Aug 16, 2022
- SanDisk Technologies LLC
- Naohiro Hosoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory die with source side of three-dimensional memory array bonde...
- Patent number 11,367,733
- Issue date Jun 21, 2022
- SanDisk Technologies LLC
- Naohiro Hosoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing amorphous and crystallin...
- Patent number 11,289,416
- Issue date Mar 29, 2022
- SanDisk Technologies LLC
- Masanori Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for etching bottom punch-through opening in a memory film of...
- Patent number 11,018,152
- Issue date May 25, 2021
- SanDisk Technologies LLC
- Tatsuya Hinoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonded structure including a performance-optimized support chip and...
- Patent number 11,011,506
- Issue date May 18, 2021
- SanDisk Technologies LLC
- Naohiro Hosoda
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device including stepped connection plates...
- Patent number 10,903,237
- Issue date Jan 26, 2021
- SanDisk Technologies LLC
- Naohiro Hosoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonded structure including a performance-optimized support chip and...
- Patent number 10,665,580
- Issue date May 26, 2020
- SanDisk Technologies LLC
- Naohiro Hosoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with gated contact via structures a...
- Patent number 10,453,798
- Issue date Oct 22, 2019
- SanDisk Technologies LLC
- Masanori Tsutsumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing multi-threshold-voltage...
- Patent number 10,347,647
- Issue date Jul 9, 2019
- SanDisk Technologies LLC
- Naohiro Hosoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing structurally reinforced...
- Patent number 10,115,730
- Issue date Oct 30, 2018
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with electrically isolated support...
- Patent number 9,978,766
- Issue date May 22, 2018
- SanDisk Technologies LLC
- Naohiro Hosoda
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SUB-BLOCK SEPARATION IN NAND MEMORY THROUGH WORD LINE BASED SELECTORS
- Publication number 20250140326
- Publication date May 1, 2025
- Western Digital Technologies, Inc.
- Naohiro Hosoda
- G11 - INFORMATION STORAGE
Information Patent Application
SUB-BLOCK SEPARATION IN NAND MEMORY THROUGH WORD LINE BASED SELECTORS
- Publication number 20250140318
- Publication date May 1, 2025
- Western Digital Technologies, Inc.
- Motoo Ohaga
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A MID-STACK SOURCE LAYER...
- Publication number 20240363165
- Publication date Oct 31, 2024
- SANDISK TECHNOLOGIES LLC
- Kento SAKANE
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING SILICON OXYCARBIDE LINER...
- Publication number 20240260267
- Publication date Aug 1, 2024
- SANDISK TECHNOLOGIES LLC
- Masanori TSUTSUMI
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING SILICON OXYCARBIDE LINER...
- Publication number 20240260266
- Publication date Aug 1, 2024
- SANDISK TECHNOLOGIES LLC
- Naohiro HOSODA
Information Patent Application
X-DIRECTION DIVIDED SUB-BLOCK MODE IN NAND
- Publication number 20240212755
- Publication date Jun 27, 2024
- SANDISK TECHNOLOGIES LLC
- Naohiro Hosoda
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED MEMORY BLOCK ISOL...
- Publication number 20240213147
- Publication date Jun 27, 2024
- SANDISK TECHNOLOGIES LLC
- Naohiro HOSODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRLESS THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THER...
- Publication number 20240179906
- Publication date May 30, 2024
- SANDISK TECHNOLOGIES LLC
- Naohiro HOSODA
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A MID-STACK SOURCE LAYER...
- Publication number 20240179908
- Publication date May 30, 2024
- SANDISK TECHNOLOGIES LLC
- Naohiro HOSODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A DRAIN CONTACT ETCH-STOP...
- Publication number 20240038667
- Publication date Feb 1, 2024
- SANDISK TECHNOLOGIES LLC
- Ryo Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING PLURAL METAL OXIDE BLOCK...
- Publication number 20220270967
- Publication date Aug 25, 2022
- SANDISK TECHNOLOGIES LLC
- Naohiro HOSODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DIE WITH SOURCE SIDE OF THREE-DIMENSIONAL MEMORY ARRAY BONDE...
- Publication number 20220181283
- Publication date Jun 9, 2022
- SANDISK TECHNOLOGIES LLC
- Naohiro HOSODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DIE WITH SOURCE SIDE OF THREE-DIMENSIONAL MEMORY ARRAY BONDE...
- Publication number 20220181343
- Publication date Jun 9, 2022
- SANDISK TECHNOLOGIES LLC
- Naohiro HOSODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING AMORPHOUS AND CRYSTALLIN...
- Publication number 20210159167
- Publication date May 27, 2021
- SANDISK TECHNOLOGIES LLC
- Masanori TSUTSUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR ETCHING BOTTOM PUNCH-THROUGH OPENING IN A MEMORY FILM OF...
- Publication number 20210005627
- Publication date Jan 7, 2021
- SANDISK TECHNOLOGIES LLC
- Tatsuya HINOUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDED STRUCTURE INCLUDING A PERFORMANCE-OPTIMIZED SUPPORT CHIP AND...
- Publication number 20200258876
- Publication date Aug 13, 2020
- SANDISK TECHNOLOGIES LLC
- Naohiro HOSODA
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING MULTI-THRESHOLD-VOLTAGE...
- Publication number 20190198515
- Publication date Jun 27, 2019
- SanDisk Technologies LLC
- Naohiro HOSODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH GATED CONTACT VIA STRUCTURES A...
- Publication number 20190096808
- Publication date Mar 28, 2019
- SanDisk Technologies LLC
- Masanori TSUTSUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH ELECTRICALLY ISOLATED SUPPORT...
- Publication number 20180130812
- Publication date May 10, 2018
- SanDisk Technologies LLC
- Naohiro HOSODA
- H01 - BASIC ELECTRIC ELEMENTS

Naohiro HOSODA

Person

Patents Grantslast 30 patents

Three-dimensional memory device containing amorphous and crystallin...

Memory die with source side of three-dimensional memory array bonde...

Memory die with source side of three-dimensional memory array bonde...

Three-dimensional memory device containing amorphous and crystallin...

Method for etching bottom punch-through opening in a memory film of...

Bonded structure including a performance-optimized support chip and...

Three-dimensional memory device including stepped connection plates...

Bonded structure including a performance-optimized support chip and...

Three-dimensional memory device with gated contact via structures a...

Three-dimensional memory device containing multi-threshold-voltage...

Three-dimensional memory device containing structurally reinforced...

Three-dimensional memory device with electrically isolated support...

Patents Applicationslast 30 patents

SUB-BLOCK SEPARATION IN NAND MEMORY THROUGH WORD LINE BASED SELECTORS

SUB-BLOCK SEPARATION IN NAND MEMORY THROUGH WORD LINE BASED SELECTORS

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A MID-STACK SOURCE LAYER...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING SILICON OXYCARBIDE LINER...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING SILICON OXYCARBIDE LINER...

X-DIRECTION DIVIDED SUB-BLOCK MODE IN NAND

THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED MEMORY BLOCK ISOL...

STAIRLESS THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THER...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A MID-STACK SOURCE LAYER...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING A DRAIN CONTACT ETCH-STOP...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING PLURAL METAL OXIDE BLOCK...

MEMORY DIE WITH SOURCE SIDE OF THREE-DIMENSIONAL MEMORY ARRAY BONDE...

MEMORY DIE WITH SOURCE SIDE OF THREE-DIMENSIONAL MEMORY ARRAY BONDE...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING AMORPHOUS AND CRYSTALLIN...

METHOD FOR ETCHING BOTTOM PUNCH-THROUGH OPENING IN A MEMORY FILM OF...

BONDED STRUCTURE INCLUDING A PERFORMANCE-OPTIMIZED SUPPORT CHIP AND...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING MULTI-THRESHOLD-VOLTAGE...

THREE-DIMENSIONAL MEMORY DEVICE WITH GATED CONTACT VIA STRUCTURES A...

THREE-DIMENSIONAL MEMORY DEVICE WITH ELECTRICALLY ISOLATED SUPPORT...