Naohiro Nishikawa

Person

Ibaraki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Epitaxial substrate for field effect transistor
- Patent number 10,340,375
- Issue date Jul 2, 2019
- Sumitomo Chemical Company, Limited
- Masahiko Hata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer, method of producing semiconductor wafer, and h...
- Patent number 9,761,686
- Issue date Sep 12, 2017
- Sumitomo Chemical Company, Limited
- Sadanori Yamanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer, method of producing semiconductor wafer, elect...
- Patent number 9,559,196
- Issue date Jan 31, 2017
- Sumitomo Chemical Company, Limited
- Naohiro Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride epitaxial crystal, method for production thereof, a...
- Patent number 8,350,292
- Issue date Jan 8, 2013
- Sumitomo Chemical Company, Limited
- Naohiro Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group 3-5 nitride semiconductor multilayer substrate, method for ma...
- Patent number 8,053,811
- Issue date Nov 8, 2011
- Sumitomo Chemical Company Limited
- Kazumasa Hiramatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor epitaxial crystal substrate
- Patent number 7,951,685
- Issue date May 31, 2011
- Sumitomo Chemical Company, Limited
- Hiroyuki Sazawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR WAFER, METHOD OF PRODUCING SEMICONDUCTOR WAFER, AND H...
- Publication number 20160372569
- Publication date Dec 22, 2016
- Sumitomo Chemical Company, Limited
- Sadanori YAMANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER, METHOD OF PRODUCING SEMICONDUCTOR WAFER, ELECT...
- Publication number 20130056794
- Publication date Mar 7, 2013
- Sumitomo Chemical Company, Limited
- Naohiro NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING SEMICONDUCTOR WAFER, AND SEMICONDUCTOR WAFER
- Publication number 20120068224
- Publication date Mar 22, 2012
- Sumitomo Chemical Company, Limited
- Naohiro NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DE...
- Publication number 20110108885
- Publication date May 12, 2011
- Sumitomo Chemical Company Limite
- Hiroyuki Sazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DE...
- Publication number 20110042719
- Publication date Feb 24, 2011
- SUMITOMO CHEMICAL COMPANY, LIMITED
- Hiroyuki Sazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE EPITAXIAL CRYSTAL, METHOD FOR PRODUCTION THEREOF, A...
- Publication number 20100117094
- Publication date May 13, 2010
- Sumitomo Chemical Company, Limited
- Naohiro Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing semiconductor epitaxial crystal substrate
- Publication number 20100084742
- Publication date Apr 8, 2010
- Sumitomo Chemical Company Limited
- Hiroyuki Sazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SUBSTRATE FOR FIELD EFFECT TRANSISTOR
- Publication number 20100019277
- Publication date Jan 28, 2010
- Sumitomo Chemical Company, Limited
- Masahiko Hata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sustrate and Semiconductor Light-Emitting Device
- Publication number 20090236629
- Publication date Sep 24, 2009
- SUMITOMO CHEMICAL COMPANY, LIMITED
- Naohiro Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method For Producing Group III-V Nitride Semiconductor Substrate
- Publication number 20090093122
- Publication date Apr 9, 2009
- Sumitomo Chemical Company Limited
- Kazumasa Ueda
- C30 - CRYSTAL GROWTH
Information Patent Application
Group 3-5 Nitride Semiconductor Multilayer Substrate, Method for Ma...
- Publication number 20090085165
- Publication date Apr 2, 2009
- Sumitomo Chemical Company, Limited
- Kazumasa Hiramatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Free-Standing Substrate, Method for Producing the Same and Semicond...
- Publication number 20090008652
- Publication date Jan 8, 2009
- Sumitomo Chemical Company, Ltd.
- Kazumasa Ueda
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Multilayer Substrate, Method For Producing Same And L...
- Publication number 20080087881
- Publication date Apr 17, 2008
- Kazumasa Ueda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trimethylgallium, a method for producing the same and a gallium nit...
- Publication number 20060075959
- Publication date Apr 13, 2006
- Sumitomo Chemical Company, Limited
- Masanobu Matsubara
- C30 - CRYSTAL GROWTH

Naohiro Nishikawa

Person

Patents Grantslast 30 patents

Epitaxial substrate for field effect transistor

Semiconductor wafer, method of producing semiconductor wafer, and h...

Semiconductor wafer, method of producing semiconductor wafer, elect...

Gallium nitride epitaxial crystal, method for production thereof, a...

Group 3-5 nitride semiconductor multilayer substrate, method for ma...

Method for manufacturing semiconductor epitaxial crystal substrate

Patents Applicationslast 30 patents

SEMICONDUCTOR WAFER, METHOD OF PRODUCING SEMICONDUCTOR WAFER, AND H...

SEMICONDUCTOR WAFER, METHOD OF PRODUCING SEMICONDUCTOR WAFER, ELECT...

METHOD OF PRODUCING SEMICONDUCTOR WAFER, AND SEMICONDUCTOR WAFER

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DE...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DE...

GALLIUM NITRIDE EPITAXIAL CRYSTAL, METHOD FOR PRODUCTION THEREOF, A...

Method for manufacturing semiconductor epitaxial crystal substrate

EPITAXIAL SUBSTRATE FOR FIELD EFFECT TRANSISTOR

Sustrate and Semiconductor Light-Emitting Device

Method For Producing Group III-V Nitride Semiconductor Substrate

Group 3-5 Nitride Semiconductor Multilayer Substrate, Method for Ma...

Free-Standing Substrate, Method for Producing the Same and Semicond...

Semiconductor Multilayer Substrate, Method For Producing Same And L...

Trimethylgallium, a method for producing the same and a gallium nit...