Naohiro Sugiyama

Person

Nagoya-city, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor substrate made of silicon carbide and method for manu...
- Patent number 10,490,635
- Issue date Nov 26, 2019
- Denso Corporation
- Naohiro Sugiyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing silicon carbide semiconductor device
- Patent number 9,450,068
- Issue date Sep 20, 2016
- Denso Corporation
- Yuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for silicon carbide semiconductor device
- Patent number 9,412,831
- Issue date Aug 9, 2016
- Denso Corporation
- Yuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,604,540
- Issue date Dec 10, 2013
- Denso Corporation
- Rajesh Kumar Malhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing th...
- Patent number 8,575,648
- Issue date Nov 5, 2013
- Denso Corporation
- Yuuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having D mode JFET and E mode JFET and method...
- Patent number 8,373,209
- Issue date Feb 12, 2013
- Denso Corporation
- Rajesh Kumar Malhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ceramic material and electronic device
- Patent number 8,194,392
- Issue date Jun 5, 2012
- Denso Corporation
- Rajesh Kumar Malhan
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Equipment and method for manufacturing silicon carbide single crystal
- Patent number 7,217,323
- Issue date May 15, 2007
- Denso Corporation
- Naohiro Sugiyama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing silicon carbide single crystal from disloc...
- Patent number 7,135,074
- Issue date Nov 14, 2006
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Itaru Gunjishima
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and apparatus for producing single crystal, substrate for gr...
- Patent number 6,786,969
- Issue date Sep 7, 2004
- Denso Corporation
- Hiroyuki Kondo
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and apparatus for fabricating high quality single crystal
- Patent number 6,451,112
- Issue date Sep 17, 2002
- Denso Corporation
- Kazukuni Hara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing silicon carbide single crystal and silicon...
- Patent number 6,214,108
- Issue date Apr 10, 2001
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Atsuto Okamoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing silicon carbide single crystal
- Patent number 5,964,944
- Issue date Oct 12, 1999
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Naohiro Sugiyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing single crystals and a seed crystal used in the...
- Patent number 5,944,890
- Issue date Aug 31, 1999
- Denso Corporation
- Yasuo Kitou
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for growing single crystal
- Patent number 5,895,526
- Issue date Apr 20, 1999
- Nippondenso Co., Ltd.
- Yasuo Kitoh
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR SUBSTRATE MADE OF SILICON CARBIDE AND METHOD FOR MANU...
- Publication number 20190035894
- Publication date Jan 31, 2019
- Denso Corporation
- Naohiro SUGIYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD FOR SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20150072485
- Publication date Mar 12, 2015
- Yuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20150072486
- Publication date Mar 12, 2015
- Denso Corporation
- Yuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having JFET and method for manufacturing the same
- Publication number 20110156052
- Publication date Jun 30, 2011
- DENSO CORPORATION
- Rajesh Kumar MALHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING D MODE JFET AND E MODE JFET AND METHOD...
- Publication number 20110156053
- Publication date Jun 30, 2011
- DENSO CORPORATION
- Rajesh Kumar Malhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING TH...
- Publication number 20110156054
- Publication date Jun 30, 2011
- DENSO CORPORATION
- Yuuichi Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20110133211
- Publication date Jun 9, 2011
- DENSO CORPORATION
- Rajesh Kumar MALHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CERAMIC MATERIAL AND ELECTRONIC DEVICE
- Publication number 20110002083
- Publication date Jan 6, 2011
- DENSO CORPORATION
- Rajesh Kumar MALHAN
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL FROM DISLOC...
- Publication number 20050211156
- Publication date Sep 29, 2005
- Itaru Gunjishima
- C30 - CRYSTAL GROWTH
Information Patent Application
Equipment and method for manufacturing silicon carbide single crystal
- Publication number 20040194694
- Publication date Oct 7, 2004
- DENSO Corporation
- Naohiro Sugiyama
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and apparatus for producing single crystal, substrate for gr...
- Publication number 20020083892
- Publication date Jul 4, 2002
- Hiroyuki Kondo
- C30 - CRYSTAL GROWTH

Naohiro Sugiyama

Person

Patents Grantslast 30 patents

Semiconductor substrate made of silicon carbide and method for manu...

Method for manufacturing silicon carbide semiconductor device

Manufacturing method for silicon carbide semiconductor device

Semiconductor device and method of manufacturing the same

Silicon carbide semiconductor device and method of manufacturing th...

Semiconductor device having D mode JFET and E mode JFET and method...

Ceramic material and electronic device

Equipment and method for manufacturing silicon carbide single crystal

Method for manufacturing silicon carbide single crystal from disloc...

Method and apparatus for producing single crystal, substrate for gr...

Method and apparatus for fabricating high quality single crystal

Method of manufacturing silicon carbide single crystal and silicon...

Method of producing silicon carbide single crystal

Method of producing single crystals and a seed crystal used in the...

Process for growing single crystal

Patents Applicationslast 30 patents

SEMICONDUCTOR SUBSTRATE MADE OF SILICON CARBIDE AND METHOD FOR MANU...

MANUFACTURING METHOD FOR SILICON CARBIDE SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

Semiconductor device having JFET and method for manufacturing the same

SEMICONDUCTOR DEVICE HAVING D MODE JFET AND E MODE JFET AND METHOD...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING TH...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

CERAMIC MATERIAL AND ELECTRONIC DEVICE

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL FROM DISLOC...

Equipment and method for manufacturing silicon carbide single crystal

Method and apparatus for producing single crystal, substrate for gr...