Naoki Hanada

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Yokohama, JP

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device wherein n-channel MOSFET, p-channel MOSFET and...
- Patent number 5,321,287
- Issue date Jun 14, 1994
- Kabushiki Kaisha Toshiba
- Teruo Uemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device wherein n-channel MOSFET, p-channel MOSFET and...
- Patent number 5,223,451
- Issue date Jun 29, 1993
- Kabushiki Kaisha Toshiba
- Teruo Uemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having E.sup.2 PROM and EPROM in one chip
- Patent number 5,200,636
- Issue date Apr 6, 1993
- Kabushiki Kaisha Toshiba
- Teruo Uemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing logic semiconductor device having non-volat...
- Patent number 5,158,902
- Issue date Oct 27, 1992
- Kabushiki Kaisha Toshiba
- Naoki Hanada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device having a non-volatile...
- Patent number 5,094,967
- Issue date Mar 10, 1992
- Kabushiki Kaisha Toshiba
- Kazuyoshi Shinada
- H01 - BASIC ELECTRIC ELEMENTS