Naoki Hatta

Person

Hachioji-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor substrate and method for manufacturing semiconductor...
- Patent number 9,773,678
- Issue date Sep 26, 2017
- Kabushiki Kaisha Toyota Jidoshokki
- Ko Imaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for semiconductor substrate
- Patent number 9,761,479
- Issue date Sep 12, 2017
- Kabushiki Kaisha Toyota Jidoshokki
- Ko Imaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide substrate, semiconductor device and method for manu...
- Patent number 8,890,170
- Issue date Nov 18, 2014
- Hoya Corporation
- Hiroyuki Nagasawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing silicon carbide single crystal
- Patent number 8,133,321
- Issue date Mar 13, 2012
- Hoya Corporation
- Takamitsu Kawahara
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR ELEMENT AND METHOD FOR PRODU...
- Publication number 20200168460
- Publication date May 28, 2020
- TAMURA CORPORATION
- Akito KURAMATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR...
- Publication number 20170213735
- Publication date Jul 27, 2017
- Kabushiki Kaisha Toyota Jidoshokki
- Ko IMAOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD FOR SEMICONDUCTOR SUBSTRATE
- Publication number 20160204023
- Publication date Jul 14, 2016
- KABUSHIKI KAISHA TOYOTA JIDOSHOKKI
- Ko IMAOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD FOR MANU...
- Publication number 20130234164
- Publication date Sep 12, 2013
- HOYA CORPORATION
- Hiroyuki Nagasawa
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR DEVICE
- Publication number 20130228797
- Publication date Sep 5, 2013
- HOYA CORPORATION
- Hiroyuki Nagasawa
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20110006310
- Publication date Jan 13, 2011
- HOYA CORPORATION
- Hiroyuki Nagasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for Producing Silicon Carbide Single Crystal
- Publication number 20080289570
- Publication date Nov 27, 2008
- HOYA CORPORATION
- Takamitsu Kawahara
- C30 - CRYSTAL GROWTH

Naoki Hatta

Person

Patents Grantslast 30 patents

Semiconductor substrate and method for manufacturing semiconductor...

Manufacturing method for semiconductor substrate

Silicon carbide substrate, semiconductor device and method for manu...

Process for producing silicon carbide single crystal

Patents Applicationslast 30 patents

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR ELEMENT AND METHOD FOR PRODU...

SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR...

MANUFACTURING METHOD FOR SEMICONDUCTOR SUBSTRATE

SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD FOR MANU...

SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Process for Producing Silicon Carbide Single Crystal