Naoki KANEDA

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Nitride semiconductor epitaxial wafer and field effect nitride tran...
- Patent number 10,340,345
- Issue date Jul 2, 2019
- Sumitomo Chemical Company, Limited
- Takeshi Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor multilayer structure and method of manufacturing the...
- Patent number 9,899,570
- Issue date Feb 20, 2018
- Sumitomo Chemical Company, Limited
- Naoki Kaneda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor epitaxial wafer and field effect nitride tran...
- Patent number 9,780,175
- Issue date Oct 3, 2017
- Sumitomo Chemical Company, Limited
- Takeshi Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and method of manufacturing the same
- Patent number 9,530,858
- Issue date Dec 27, 2016
- Sumitomo Chemical Company, Limited
- Akihisa Terano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage gallium nitride based semiconductor device and manufac...
- Patent number 9,184,244
- Issue date Nov 10, 2015
- SCIOCS COMPANY LIMITED
- Naoki Kaneda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor element and method of manufacturing the same
- Patent number 9,059,328
- Issue date Jun 16, 2015
- Hitachi Metals, Ltd.
- Akihisa Terano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride semiconductor crystal, group III nitride semicond...
- Patent number 9,013,026
- Issue date Apr 21, 2015
- Hitachi Metals, Ltd.
- Tadayoshi Tsuchiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride rectifying device
- Patent number 8,835,930
- Issue date Sep 16, 2014
- Hitachi Metals, Ltd.
- Tadayoshi Tsuchiya
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NITRIDE SEMICONDUCTOR EPITAXIAL WAFER AND FIELD EFFECT NITRIDE TRAN...
- Publication number 20170365666
- Publication date Dec 21, 2017
- Sumitomo Chemical Company, Limited
- Takeshi TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MULTILAYER STRUCTURE AND METHOD OF MANUFACTURING THE...
- Publication number 20170141270
- Publication date May 18, 2017
- Sumitomo Chemical Company, Limited
- Naoki KANEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICE AND MANUFAC...
- Publication number 20150243736
- Publication date Aug 27, 2015
- Hitachi Metals, Ltd.
- Naoki KANEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride Semiconductor Device and Method of Manufacturing the Same
- Publication number 20150179780
- Publication date Jun 25, 2015
- Hitachi Metals, Ltd.
- Akihisa TERANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUTOR DEVICE
- Publication number 20140191369
- Publication date Jul 10, 2014
- Hitachi Metals, Ltd.
- Tadayoshi TSUCHIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride Semiconductor Element and Method of Manufacturing the Same
- Publication number 20140117376
- Publication date May 1, 2014
- Hitachi Metals, Ltd.
- Akihisa TERANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, GROUP III NITRIDE SEMICOND...
- Publication number 20140070371
- Publication date Mar 13, 2014
- Hitachi Metals, Ltd.
- Tadayoshi TSUCHIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR EPITAXIAL WAFER AND FIELD EFFECT NITRIDE TRAN...
- Publication number 20130187172
- Publication date Jul 25, 2013
- Hitachi Cable, Ltd.
- Takeshi TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE RECTIFYING DEVICE
- Publication number 20130001585
- Publication date Jan 3, 2013
- Hitachi Cable, Ltd.
- Tadayoshi TSUCHIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIODE
- Publication number 20120313108
- Publication date Dec 13, 2012
- Hitachi Cable, Ltd.
- Tadayoshi TSUCHIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a semiconductor structure for use in a light emit...
- Publication number 20040224434
- Publication date Nov 11, 2004
- Hitachi Cable, Ltd.
- Kenji Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LED of AlGaInP system and epitaxial wafer used for same
- Publication number 20020145146
- Publication date Oct 10, 2002
- Kenji Shibata
- H01 - BASIC ELECTRIC ELEMENTS

Naoki KANEDA

Person

Patents Grantslast 30 patents

Nitride semiconductor epitaxial wafer and field effect nitride tran...

Semiconductor multilayer structure and method of manufacturing the...

Nitride semiconductor epitaxial wafer and field effect nitride tran...

Nitride semiconductor device and method of manufacturing the same

High voltage gallium nitride based semiconductor device and manufac...

Nitride semiconductor element and method of manufacturing the same

Group III nitride semiconductor crystal, group III nitride semicond...

Gallium nitride rectifying device

Patents Applicationslast 30 patents

NITRIDE SEMICONDUCTOR EPITAXIAL WAFER AND FIELD EFFECT NITRIDE TRAN...

SEMICONDUCTOR MULTILAYER STRUCTURE AND METHOD OF MANUFACTURING THE...

HIGH VOLTAGE GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICE AND MANUFAC...

Nitride Semiconductor Device and Method of Manufacturing the Same

NITRIDE SEMICONDUTOR DEVICE

Nitride Semiconductor Element and Method of Manufacturing the Same

GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, GROUP III NITRIDE SEMICOND...

NITRIDE SEMICONDUCTOR EPITAXIAL WAFER AND FIELD EFFECT NITRIDE TRAN...

GALLIUM NITRIDE RECTIFYING DEVICE

SEMICONDUCTOR DIODE

Method of forming a semiconductor structure for use in a light emit...

LED of AlGaInP system and epitaxial wafer used for same