Naoki Kaneyama

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Inazawa-shi, JP

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Patents Grantslast 30 patents

Information Patent Grant
Group III nitride compound semiconductor device having a superlatti...
- Patent number 7,015,515
- Issue date Mar 21, 2006
- Toyoda Gosei Co., Ltd.
- Tetsuya Taki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor light-emitting device
- Patent number 6,861,663
- Issue date Mar 1, 2005
- Toyoda Gosei Co., Ltd.
- Katsuhisa Sawazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing group III nitride compound semiconductor li...
- Patent number 6,762,070
- Issue date Jul 13, 2004
- Toyoda Gosei Co., Ltd
- Naoki Kaneyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor light-emitting device havi...
- Patent number 6,452,214
- Issue date Sep 17, 2002
- Toyoda Gosei Co., Ltd.
- Naoki Kaneyama
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
Method for producing group III nitride compounds semiconductor
- Publication number 20040169192
- Publication date Sep 2, 2004
- Hisaki Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing group III nitride compound semiconductor device
- Publication number 20020197827
- Publication date Dec 26, 2002
- Tetsuya Taki
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of manufacturing group III nitride compound semiconductor li...
- Publication number 20020175332
- Publication date Nov 28, 2002
- Toyoda Gosei Co., Ltd.
- Naoki Kaneyama
- B82 - NANO-TECHNOLOGY
Information Patent Application
Group III nitride compound semiconductor light-emitting device
- Publication number 20020056836
- Publication date May 16, 2002
- Katsuhisa Sawazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III nitride compound semiconductor light-emitting device
- Publication number 20020014632
- Publication date Feb 7, 2002
- Naoki Kaneyama
- B82 - NANO-TECHNOLOGY