Naoki OOI

Person

Itami-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing silicon carbide substrate
- Patent number 9,631,296
- Issue date Apr 25, 2017
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device
- Patent number 9,082,683
- Issue date Jul 14, 2015
- Sumitomo Electric Industries, Ltd
- Naoki Ooi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device
- Patent number 8,759,187
- Issue date Jun 24, 2014
- Sumitomo Electric Industries, Ltd
- Naoki Ooi
Information Patent Grant
Method for manufacturing silicon carbide semiconductor device
- Patent number 8,652,954
- Issue date Feb 18, 2014
- Sumitomo Electric Industries, Ltd
- Naoki Ooi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device
- Patent number 8,642,436
- Issue date Feb 4, 2014
- Sumitomo Electric Industries, Ltd
- Naoki Ooi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE
- Publication number 20170152609
- Publication date Jun 1, 2017
- Sumitomo Electric Industries, Ltd.
- Shinsuke FUJIWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MAUFACTURING SILICON CARBIDE SUBSTRATE
- Publication number 20150225873
- Publication date Aug 13, 2015
- Sumitomo Electric Industries, Ltd.
- Shinsuke FUJIWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20140120682
- Publication date May 1, 2014
- Sumitomo Electric Industries, Ltd.
- Naoki Ooi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE CRYSTAL
- Publication number 20130061801
- Publication date Mar 14, 2013
- Sumitomo Electric Industries, Ltd.
- Shinsuke FUJIWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20130045593
- Publication date Feb 21, 2013
- Sumitomo Electric Industries, Ltd.
- Naoki OOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20120184092
- Publication date Jul 19, 2012
- Sumitomo Electric Industries, Ltd.
- Naoki Ooi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20120164810
- Publication date Jun 28, 2012
- Sumitomo Electric Industries, Ltd.
- Naoki Ooi
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method of manufacturing silicon carbide substrate

Method of manufacturing silicon carbide semiconductor device

Method of manufacturing silicon carbide semiconductor device

Method for manufacturing silicon carbide semiconductor device

Method of manufacturing silicon carbide semiconductor device

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE

METHOD OF MAUFACTURING SILICON CARBIDE SUBSTRATE

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SILICON CARBIDE CRYSTAL

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE