Naoki Shibata

Person

Aichi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Production method for group III nitride semiconductor and group III...
- Patent number 9,837,494
- Issue date Dec 5, 2017
- Toyoda Gosei Co., Ltd.
- Koji Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing group III nitride semiconductor
- Patent number 9,214,339
- Issue date Dec 15, 2015
- Toyoda Gosei Co., Ltd.
- Koji Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing Group III nitride semiconductor and Group III...
- Patent number 9,209,021
- Issue date Dec 8, 2015
- Toyoda Gosei Co., Ltd.
- Koji Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing Ga-containing group III nitride semiconductor
- Patent number 9,190,268
- Issue date Nov 17, 2015
- TOYODA GOSEI CO. LTD.
- Koji Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Support structure of windshield
- Patent number 8,651,552
- Issue date Feb 18, 2014
- Mazda Motor Corporation
- Nobuyuki Shibutake
- B62 - LAND VEHICLES FOR TRAVELLING OTHERWISE THAN ON RAILS
Information Patent Grant
Semiconductor substrate, electronic device, optical device, and pro...
- Patent number 8,084,281
- Issue date Dec 27, 2011
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Field-effect transistor, semiconductor device, a method for manufac...
- Patent number 7,981,744
- Issue date Jul 19, 2011
- Toyoda Gosei Co., Ltd.
- Masayoshi Kosaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
n-Electrode for III group nitride based compound semiconductor element
- Patent number 7,872,274
- Issue date Jan 18, 2011
- Toyoda Gosei Co., Ltd.
- Shunsuke Murai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using group III nitrogen compound
- Patent number 7,867,800
- Issue date Jan 11, 2011
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode for p-type SiC
- Patent number 7,564,062
- Issue date Jul 21, 2009
- Toyoda Gosei, Co., Ltd.
- Tomohiro Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an undercoat layer and method of manufa...
- Patent number 7,550,782
- Issue date Jun 23, 2009
- Toyoda Gosei Co., Ltd.
- Masanori Murakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a low temperature-grown buffer layer, a light emi...
- Patent number 7,524,741
- Issue date Apr 28, 2009
- Toyoda Gosei Co., Ltd.
- Yasuhisa Ushida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using group III nitrogen compound
- Patent number 7,332,366
- Issue date Feb 19, 2008
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor element based on Group III element nitride
- Patent number 7,312,472
- Issue date Dec 25, 2007
- Toyoda Gosei Co., Ltd.
- Toshiaki Chiyo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor light-emitting element
- Patent number 7,247,884
- Issue date Jul 24, 2007
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode for p-type Group III nitride compound semiconductor layer...
- Patent number 7,190,076
- Issue date Mar 13, 2007
- Toyoda Gosei Co., Ltd.
- Ippei Fujimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wiring structure for semiconductor device
- Patent number 7,164,207
- Issue date Jan 16, 2007
- Toyoda Gosei Co., Ltd.
- Masahiro Shimada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using group III nitrogen compound
- Patent number 7,138,286
- Issue date Nov 21, 2006
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing group III nitride compound semiconductor
- Patent number 7,128,846
- Issue date Oct 31, 2006
- Toyoda Gosei Co., Ltd.
- Kazuki Nishijima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device
- Patent number 7,042,012
- Issue date May 9, 2006
- Toyoda Gosei Co., Ltd.
- Masanobu Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type semiconductor manufacturing method and semiconductor device
- Patent number 7,029,939
- Issue date Apr 18, 2006
- Toyoda Gosei Co., Ltd.
- Toshiaki Chiyo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III group nitride compound semiconductor luminescent element
- Patent number 7,030,414
- Issue date Apr 18, 2006
- Toyoda Gosei Co., Ltd.
- Shinya Asami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor device and method for form...
- Patent number 7,018,915
- Issue date Mar 28, 2006
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting aluminum gallium indium nitride compound semiconduct...
- Patent number 7,001,790
- Issue date Feb 21, 2006
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor device and method for prod...
- Patent number 6,982,435
- Issue date Jan 3, 2006
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and devices related to electrode pads for p-type Group III...
- Patent number 6,955,936
- Issue date Oct 18, 2005
- Toyoda Gosei Co., Ltd.
- Toshiya Uemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing semiconductor resistance, device for reducing s...
- Patent number 6,943,128
- Issue date Sep 13, 2005
- Toyoda Gosei Co., Ltd.
- Toshiaki Chiyo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode for p-type SiC
- Patent number 6,943,376
- Issue date Sep 13, 2005
- Toyoda Gosei Co., Ltd.
- Osamu Nakatsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor device and method of produ...
- Patent number 6,939,733
- Issue date Sep 6, 2005
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical semiconductor device
- Patent number 6,933,169
- Issue date Aug 23, 2005
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for Producing Group III Nitride Semiconductor and Group III...
- Publication number 20140353804
- Publication date Dec 4, 2014
- Toyoda Gosei Co., Ltd.
- Koji OKUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND
- Publication number 20140239313
- Publication date Aug 28, 2014
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing Group III Nitride Semiconductor
- Publication number 20140227864
- Publication date Aug 14, 2014
- Toyoda Gosei Co., Ltd.
- Koji OKUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRODUCTION METHOD FOR GROUP III NITRIDE SEMICONDUCTOR AND GROUP III...
- Publication number 20130256743
- Publication date Oct 3, 2013
- Toyoda Gosei Co., Ltd.
- Koji OKUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING Ga-CONTAINING GROUP III NITRIDE SEMICONDUCTOR
- Publication number 20130260541
- Publication date Oct 3, 2013
- Toyoda Gosei Co., Ltd.
- Koji OKUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND
- Publication number 20120217510
- Publication date Aug 30, 2012
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPORT STRUCTURE OF WINDSHIELD
- Publication number 20120032468
- Publication date Feb 9, 2012
- MAZDA MOTOR CORPORATION
- Nobuyuki SHIBUTAKE
- B62 - LAND VEHICLES FOR TRAVELLING OTHERWISE THAN ON RAILS
Information Patent Application
Light-emitting semiconductor device using group III nitrogen compound
- Publication number 20110101412
- Publication date May 5, 2011
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Substrate, Electronic Device, Optical Device, and Pro...
- Publication number 20100301358
- Publication date Dec 2, 2010
- Naoki Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
Production Methods of Semiconductor Crystal and Semiconductor Subst...
- Publication number 20090155580
- Publication date Jun 18, 2009
- Naoki Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
Light-emitting semiconductor device using group III nitrogen compound
- Publication number 20080173880
- Publication date Jul 24, 2008
- TOYODA GOSEI
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Transistor, Semiconductor Device, a Method for Manufac...
- Publication number 20070278532
- Publication date Dec 6, 2007
- Masayoshi Kosaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a low temperature-grown buffer layer, light emitt...
- Publication number 20060223287
- Publication date Oct 5, 2006
- Toyoda Gosei Co., Ltd.
- Yasuhisa Ushida
- C30 - CRYSTAL GROWTH
Information Patent Application
Electrode for p-type SiC
- Publication number 20060169985
- Publication date Aug 3, 2006
- TOYODA GOSEI CO., LTD
- Tomohiro Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting semiconductor device using group III nitrogen compound
- Publication number 20060118821
- Publication date Jun 8, 2006
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20060065898
- Publication date Mar 30, 2006
- TOYODA GOSEI CO., LTD
- Masanori Murakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor light-emitting device
- Publication number 20050247949
- Publication date Nov 10, 2005
- Toyota Gosei Co., Ltd.
- Masanobu Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIght-emitting semiconductor device using group III nitrogen compound
- Publication number 20050224834
- Publication date Oct 13, 2005
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for producing group III nitride compound semiconductor
- Publication number 20050118825
- Publication date Jun 2, 2005
- Kazuki Nishijima
- C30 - CRYSTAL GROWTH
Information Patent Application
Group lll nitride compound semiconductor device and method for form...
- Publication number 20040222499
- Publication date Nov 11, 2004
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III group nitride based semiconductor element and method for manufa...
- Publication number 20040209390
- Publication date Oct 21, 2004
- Masanobu Senda
- C30 - CRYSTAL GROWTH
Information Patent Application
Wiring structure for semiconductor device
- Publication number 20040183201
- Publication date Sep 23, 2004
- Toyoda Gosei Co., Ltd.
- Masahiro Shimada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-type semiconductor manufacturing method and semiconductor device
- Publication number 20040185643
- Publication date Sep 23, 2004
- Toshiaki Chiyo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III group nitride system compound semiconductor light emitting element
- Publication number 20040169186
- Publication date Sep 2, 2004
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- B82 - NANO-TECHNOLOGY
Information Patent Application
Electrode for p-type Group III nitride compound semiconductor and m...
- Publication number 20040130025
- Publication date Jul 8, 2004
- TOYODA GOSEI CO., LTD
- Ippei Fujimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III nitride compound semiconductor device and method of produ...
- Publication number 20040115917
- Publication date Jun 17, 2004
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
III group nitride compound semiconductor luminescent element
- Publication number 20040113169
- Publication date Jun 17, 2004
- Shinya Asami
- B82 - NANO-TECHNOLOGY
Information Patent Application
Compound semiconductor element based on group III element nitride
- Publication number 20040079949
- Publication date Apr 29, 2004
- Toshiaki Chiyo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods and devices related to electrode pads for p-type group III...
- Publication number 20040065892
- Publication date Apr 8, 2004
- Toyoda Gosei Co., Ltd.
- Toshiya Uemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light emititng device
- Publication number 20040061115
- Publication date Apr 1, 2004
- Takahiro Kozawa
- H01 - BASIC ELECTRIC ELEMENTS

Naoki Shibata

Person

Patents Grantslast 30 patents

Production method for group III nitride semiconductor and group III...

Method for producing group III nitride semiconductor

Method for producing Group III nitride semiconductor and Group III...

Method for producing Ga-containing group III nitride semiconductor

Support structure of windshield

Semiconductor substrate, electronic device, optical device, and pro...

Field-effect transistor, semiconductor device, a method for manufac...

n-Electrode for III group nitride based compound semiconductor element

Light-emitting semiconductor device using group III nitrogen compound

Electrode for p-type SiC

Semiconductor device having an undercoat layer and method of manufa...

Method of forming a low temperature-grown buffer layer, a light emi...

Light-emitting semiconductor device using group III nitrogen compound

Compound semiconductor element based on Group III element nitride

Group III nitride compound semiconductor light-emitting element

Electrode for p-type Group III nitride compound semiconductor layer...

Wiring structure for semiconductor device

Light-emitting semiconductor device using group III nitrogen compound

Process for producing group III nitride compound semiconductor

Semiconductor light-emitting device

P-type semiconductor manufacturing method and semiconductor device

III group nitride compound semiconductor luminescent element

Group III nitride compound semiconductor device and method for form...

Light-emitting aluminum gallium indium nitride compound semiconduct...

Group III nitride compound semiconductor device and method for prod...

Methods and devices related to electrode pads for p-type Group III...

Method for reducing semiconductor resistance, device for reducing s...

Electrode for p-type SiC

Group III nitride compound semiconductor device and method of produ...

Optical semiconductor device

Patents Applicationslast 30 patents

Method for Producing Group III Nitride Semiconductor and Group III...

LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND

Method for Producing Group III Nitride Semiconductor

PRODUCTION METHOD FOR GROUP III NITRIDE SEMICONDUCTOR AND GROUP III...

METHOD FOR PRODUCING Ga-CONTAINING GROUP III NITRIDE SEMICONDUCTOR

LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND

SUPPORT STRUCTURE OF WINDSHIELD

Light-emitting semiconductor device using group III nitrogen compound

Semiconductor Substrate, Electronic Device, Optical Device, and Pro...

Production Methods of Semiconductor Crystal and Semiconductor Subst...

Light-emitting semiconductor device using group III nitrogen compound

Field-Effect Transistor, Semiconductor Device, a Method for Manufac...

Method of forming a low temperature-grown buffer layer, light emitt...

Electrode for p-type SiC

Light-emitting semiconductor device using group III nitrogen compound

Semiconductor device and method of manufacturing the same

Semiconductor light-emitting device

LIght-emitting semiconductor device using group III nitrogen compound

Process for producing group III nitride compound semiconductor

Group lll nitride compound semiconductor device and method for form...

III group nitride based semiconductor element and method for manufa...

Wiring structure for semiconductor device

P-type semiconductor manufacturing method and semiconductor device

III group nitride system compound semiconductor light emitting element

Electrode for p-type Group III nitride compound semiconductor and m...

Group III nitride compound semiconductor device and method of produ...

III group nitride compound semiconductor luminescent element

Compound semiconductor element based on group III element nitride

Methods and devices related to electrode pads for p-type group III...

Light emititng device