Naoko Takenouchi

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
A P channel MIS type semiconductor device
- Patent number 5,164,801
- Issue date Nov 17, 1992
- Kabushiki Kaisha Toshiba
- Katsuhiko Hieda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with lightly doped drain structure and meth...
- Patent number 5,061,649
- Issue date Oct 29, 1991
- Kabushiki Kaisha Toshiba
- Naoko Takenouchi
- H01 - BASIC ELECTRIC ELEMENTS