Naomi YOSHIDA

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Fluorine-free tungsten ALD for dielectric selectivity improvement
- Patent number 12,062,545
- Issue date Aug 13, 2024
- Applied Materials, Inc.
- Ilanit Fisher
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of dielectric material fill and treatment
- Patent number 12,046,508
- Issue date Jul 23, 2024
- Applied Materials, Inc.
- Shi You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device having an oxygen free platinum group metal film
- Patent number 11,894,233
- Issue date Feb 6, 2024
- Applied Materials, Inc.
- Yixiong Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Integrated dipole flow for transistor
- Patent number 11,888,045
- Issue date Jan 30, 2024
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate-all-around device nanowire air gap spacer formation
- Patent number 11,848,369
- Issue date Dec 19, 2023
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of cleaning a structure and method of depositing a capping l...
- Patent number 11,830,725
- Issue date Nov 28, 2023
- Applied Materials, Inc.
- Naomi Yoshida
- B08 - CLEANING
Information Patent Grant
Method of dielectric material fill and treatment
- Patent number 11,615,984
- Issue date Mar 28, 2023
- Applied Materials, Inc.
- Shi You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen free deposition of platinum group metal films
- Patent number 11,488,830
- Issue date Nov 1, 2022
- Applied Materials, Inc.
- Yixiong Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Horizontal gate all around device nanowire air gap spacer formation
- Patent number 11,282,936
- Issue date Mar 22, 2022
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated dipole flow for transistor
- Patent number 11,245,022
- Issue date Feb 8, 2022
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around and FinFET device isolation
- Patent number 11,145,761
- Issue date Oct 12, 2021
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for n-type metal oxide semiconductor (NMOS) m...
- Patent number 11,075,276
- Issue date Jul 27, 2021
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around device nanowire air gap spacer formation
- Patent number 10,777,650
- Issue date Sep 15, 2020
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tantalum-containing material removal
- Patent number 10,727,080
- Issue date Jul 28, 2020
- Applied Materials, Inc.
- Xikun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for doping engineering and threshold voltage...
- Patent number 10,665,450
- Issue date May 26, 2020
- Applied Materials, Inc.
- Yixiong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low thickness dependent work-function nMOS integration for metal gate
- Patent number 10,608,097
- Issue date Mar 31, 2020
- Applied Materials, Inc.
- Paul F. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around device isolation
- Patent number 10,573,719
- Issue date Feb 25, 2020
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-limiting and saturating chemical vapor deposition of a silicon...
- Patent number 10,553,425
- Issue date Feb 4, 2020
- Applied Materials, Inc.
- Jessica S. Kachian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around and FinFET device isolation
- Patent number 10,490,666
- Issue date Nov 26, 2019
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating asymmetrical three dimensional device
- Patent number 10,381,465
- Issue date Aug 13, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface functionalization and passivation with a control layer
- Patent number 10,262,858
- Issue date Apr 16, 2019
- Applied Materials, Inc.
- Naomi Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating junctions and spacers for horizontal gate al...
- Patent number 10,177,227
- Issue date Jan 8, 2019
- Applied Materials, Inc.
- Naomi Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum content control of TiAIN films
- Patent number 10,170,321
- Issue date Jan 1, 2019
- Applied Materials, Inc.
- Wenyu Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature atomic layer deposition of oxides on compound semic...
- Patent number 10,134,585
- Issue date Nov 20, 2018
- The Regents of the University of California
- Kasra Sardashti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-threshold voltage (Vt) workfunction metal by selective atomic...
- Patent number 10,109,534
- Issue date Oct 23, 2018
- Applied Materials, Inc.
- Adam Brand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around and FinFET device isolation
- Patent number 9,865,735
- Issue date Jan 9, 2018
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-limiting and saturating chemical vapor deposition of a silicon...
- Patent number 9,773,663
- Issue date Sep 26, 2017
- Applied Materials, Inc.
- Jessica S. Kachian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-threshold voltage structures with a lanthanum nitride film an...
- Patent number 9,748,354
- Issue date Aug 29, 2017
- Applied Materials, Inc.
- Wei V. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating three dimensional device
- Patent number 9,748,364
- Issue date Aug 29, 2017
- Varian Semiconductor Equipment Associates, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for forming horizontal gate all around device...
- Patent number 9,673,277
- Issue date Jun 6, 2017
- Applied Materials, Inc.
- Adam Brand
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SOURCE CONTACT FOR 3D MEMORY WITH CMOS BONDED ARRAY
- Publication number 20250022935
- Publication date Jan 16, 2025
- Applied Materials, Inc.
- Chang Seok Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT CAPPING WITH INTEGRATED PROCESS STEPS
- Publication number 20250006474
- Publication date Jan 2, 2025
- Applied Materials, Inc.
- Naomi YOSHIDA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF DIELECTRIC MATERIAL FILL AND TREATMENT
- Publication number 20240379420
- Publication date Nov 14, 2024
- Applied Materials, Inc.
- Shi YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D NAND CELLS WITH ENHANCED ERASE SPEED THROUGH DIPOLE ENGINEERING...
- Publication number 20240365551
- Publication date Oct 31, 2024
- Applied Materials, Inc.
- Chang Seok Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED METHOD AND TOOL FOR HIGH QUALITY SELECTIVE SILICON NITRI...
- Publication number 20240249934
- Publication date Jul 25, 2024
- Applied Materials, Inc.
- Naomi Yoshida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INTEGRATED METHOD AND TOOL FOR HIGH QUALITY SELECTIVE SILICON NITRI...
- Publication number 20230420232
- Publication date Dec 28, 2023
- Applied Materials, Inc.
- Tomohiko Kitajima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INTEGRATED METHOD AND TOOL FOR HIGH QUALITY SELECTIVE SILICON NITRI...
- Publication number 20230369031
- Publication date Nov 16, 2023
- Applied Materials, Inc.
- Tomohiko Kitajima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF DIELECTRIC MATERIAL FILL AND TREATMENT
- Publication number 20230187276
- Publication date Jun 15, 2023
- Applied Materials, Inc.
- Shi YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxygen Free Deposition Of Platinum Group Metal Films
- Publication number 20230025937
- Publication date Jan 26, 2023
- Applied Materials, Inc.
- Yixiong Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HORIZONTAL GATE-ALL-AROUND DEVICE NANOWIRE AIR GAP SPACER FORMATION
- Publication number 20220173220
- Publication date Jun 2, 2022
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED DIPOLE FLOW FOR TRANSISTOR
- Publication number 20220115516
- Publication date Apr 14, 2022
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLUORINE-FREE TUNGSTEN ALD FOR DIELECTRIC SELECTIVITY IMPROVEMENT
- Publication number 20210384036
- Publication date Dec 9, 2021
- Applied Materials, Inc.
- Ilanit Fisher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fluorine-Free Tungsten ALD And Tungsten Selective CVD For Dielectrics
- Publication number 20210384035
- Publication date Dec 9, 2021
- Applied Materials, Inc.
- Ilanit Fisher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF DIELECTRIC MATERIAL FILL AND TREATMENT
- Publication number 20210317580
- Publication date Oct 14, 2021
- Applied Materials, Inc.
- Shi YOU
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF CLEANING A STRUCTURE AND METHOD OF DEPOSITING A CAPPING L...
- Publication number 20210233765
- Publication date Jul 29, 2021
- Applied Materials, Inc.
- Naomi YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORIZONTAL GATE ALL AROUND DEVICE NANOWIRE AIR GAP SPACER FORMATION
- Publication number 20200411656
- Publication date Dec 31, 2020
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED DIPOLE FLOW FOR TRANSISTOR
- Publication number 20200373404
- Publication date Nov 26, 2020
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR N-TYPE METAL OXIDE SEMICONDUCTOR (NMOS) M...
- Publication number 20200111885
- Publication date Apr 9, 2020
- Applied Materials, Inc.
- YONGJING LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxygen Free Deposition Of Platinum Group Metal Films
- Publication number 20200063263
- Publication date Feb 27, 2020
- Applied Materials, Inc.
- Yixiong Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION
- Publication number 20200035822
- Publication date Jan 30, 2020
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR DOPING ENGINEERING AND THRESHOLD VOLTAGE...
- Publication number 20190057863
- Publication date Feb 21, 2019
- YIXIONG YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Thickness Dependent Work-Function nMOS Integration For Metal Gate
- Publication number 20190019874
- Publication date Jan 17, 2019
- Applied Materials, Inc.
- Paul F. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TANTALUM-CONTAINING MATERIAL REMOVAL
- Publication number 20190013211
- Publication date Jan 10, 2019
- Applied Materials, Inc.
- Xikun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Aluminum Content Control of TiAIN Films
- Publication number 20180269065
- Publication date Sep 20, 2018
- Applied Materials, Inc.
- Wenyu Zhang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION
- Publication number 20180061978
- Publication date Mar 1, 2018
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-LIMITING AND SATURATING CHEMICAL VAPOR DEPOSITION OF A SILICON...
- Publication number 20180019116
- Publication date Jan 18, 2018
- Applied Materials, Inc.
- Jessica S. KACHIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE FUNCTIONALIZATION AND PASSIVATION WITH A CONTROL LAYER
- Publication number 20170309479
- Publication date Oct 26, 2017
- Applied Materials, Inc.
- Naomi YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORIZONTAL GATE ALL AROUND DEVICE NANOWIRE AIR GAP SPACER FORMATION
- Publication number 20170309719
- Publication date Oct 26, 2017
- Applied Materials, Inc.
- Shiyu SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-THRESHOLD VOLTAGE STRUCTURES WITH A LANTHANUM NITRIDE FILM AN...
- Publication number 20170179252
- Publication date Jun 22, 2017
- Applied Materials, Inc.
- Wei V. TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-LIMITING AND SATURATING CHEMICAL VAPOR DEPOSITION OF A SILICON...
- Publication number 20170040159
- Publication date Feb 9, 2017
- Applied Materials, Inc.
- Jessica S. KACHIAN
- H01 - BASIC ELECTRIC ELEMENTS

Naomi YOSHIDA

Person

Patents Grantslast 30 patents

Fluorine-free tungsten ALD for dielectric selectivity improvement

Method of dielectric material fill and treatment

Electronic device having an oxygen free platinum group metal film

Integrated dipole flow for transistor

Horizontal gate-all-around device nanowire air gap spacer formation

Method of cleaning a structure and method of depositing a capping l...

Method of dielectric material fill and treatment

Oxygen free deposition of platinum group metal films

Horizontal gate all around device nanowire air gap spacer formation

Integrated dipole flow for transistor

Horizontal gate all around and FinFET device isolation

Methods and apparatus for n-type metal oxide semiconductor (NMOS) m...

Horizontal gate all around device nanowire air gap spacer formation

Tantalum-containing material removal

Methods and apparatus for doping engineering and threshold voltage...

Low thickness dependent work-function nMOS integration for metal gate

Horizontal gate all around device isolation

Self-limiting and saturating chemical vapor deposition of a silicon...

Horizontal gate all around and FinFET device isolation

Method for fabricating asymmetrical three dimensional device

Surface functionalization and passivation with a control layer

Method for fabricating junctions and spacers for horizontal gate al...

Aluminum content control of TiAIN films

Low temperature atomic layer deposition of oxides on compound semic...

Multi-threshold voltage (Vt) workfunction metal by selective atomic...

Horizontal gate all around and FinFET device isolation

Self-limiting and saturating chemical vapor deposition of a silicon...

Multi-threshold voltage structures with a lanthanum nitride film an...

Method for fabricating three dimensional device

Methods and apparatus for forming horizontal gate all around device...

Patents Applicationslast 30 patents

SOURCE CONTACT FOR 3D MEMORY WITH CMOS BONDED ARRAY

INTERCONNECT CAPPING WITH INTEGRATED PROCESS STEPS

METHOD OF DIELECTRIC MATERIAL FILL AND TREATMENT

3D NAND CELLS WITH ENHANCED ERASE SPEED THROUGH DIPOLE ENGINEERING...

INTEGRATED METHOD AND TOOL FOR HIGH QUALITY SELECTIVE SILICON NITRI...

INTEGRATED METHOD AND TOOL FOR HIGH QUALITY SELECTIVE SILICON NITRI...

INTEGRATED METHOD AND TOOL FOR HIGH QUALITY SELECTIVE SILICON NITRI...

METHOD OF DIELECTRIC MATERIAL FILL AND TREATMENT

Oxygen Free Deposition Of Platinum Group Metal Films

HORIZONTAL GATE-ALL-AROUND DEVICE NANOWIRE AIR GAP SPACER FORMATION

INTEGRATED DIPOLE FLOW FOR TRANSISTOR

FLUORINE-FREE TUNGSTEN ALD FOR DIELECTRIC SELECTIVITY IMPROVEMENT

Fluorine-Free Tungsten ALD And Tungsten Selective CVD For Dielectrics

METHOD OF DIELECTRIC MATERIAL FILL AND TREATMENT

METHOD OF CLEANING A STRUCTURE AND METHOD OF DEPOSITING A CAPPING L...

HORIZONTAL GATE ALL AROUND DEVICE NANOWIRE AIR GAP SPACER FORMATION

INTEGRATED DIPOLE FLOW FOR TRANSISTOR

METHODS AND APPARATUS FOR N-TYPE METAL OXIDE SEMICONDUCTOR (NMOS) M...

Oxygen Free Deposition Of Platinum Group Metal Films

HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION

METHODS AND APPARATUS FOR DOPING ENGINEERING AND THRESHOLD VOLTAGE...

Low Thickness Dependent Work-Function nMOS Integration For Metal Gate

TANTALUM-CONTAINING MATERIAL REMOVAL

Aluminum Content Control of TiAIN Films

HORIZONTAL GATE ALL AROUND AND FINFET DEVICE ISOLATION

SELF-LIMITING AND SATURATING CHEMICAL VAPOR DEPOSITION OF A SILICON...

SURFACE FUNCTIONALIZATION AND PASSIVATION WITH A CONTROL LAYER

HORIZONTAL GATE ALL AROUND DEVICE NANOWIRE AIR GAP SPACER FORMATION

MULTI-THRESHOLD VOLTAGE STRUCTURES WITH A LANTHANUM NITRIDE FILM AN...

SELF-LIMITING AND SATURATING CHEMICAL VAPOR DEPOSITION OF A SILICON...