Naotaka Kuroda

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect transistor, and multilayered epitaxial film for use in...
- Patent number 9,954,087
- Issue date Apr 24, 2018
- Renesas Electronics Corporation
- Takashi Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor, and multilayered epitaxial film for use in...
- Patent number 8,853,666
- Issue date Oct 7, 2014
- Renesas Electronics Corporation
- Takashi Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and heat sink with 3-dimensional thermal condu...
- Patent number 8,476,756
- Issue date Jul 2, 2013
- NEC Corporation
- Naotaka Kuroda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with reduced gate leakage current
- Patent number 8,466,495
- Issue date Jun 18, 2013
- NEC Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit simulator, circuit simulation method and program
- Patent number 8,332,190
- Issue date Dec 11, 2012
- NEC Corporation
- Masahiro Tanomura
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Field effect transistor with reduced gate leakage current
- Patent number 8,198,652
- Issue date Jun 12, 2012
- NEC Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and heat sink with 3-dimensional thermal condu...
- Patent number 8,063,484
- Issue date Nov 22, 2011
- NEC Corporation
- Naotaka Kuroda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with heat dissipating means
- Patent number 7,741,700
- Issue date Jun 22, 2010
- NEC Corporation
- Naotaka Kuroda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing gallium nitride crystal substrate, and galliu...
- Patent number 6,824,610
- Issue date Nov 30, 2004
- NEC Corporation
- Masatomo Shibata
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIELD EFFECT TRANSISTOR AND MULTILAYERED EPITAXIAL FILM FOR USE IN...
- Publication number 20180233590
- Publication date Aug 16, 2018
- RENESAS ELECTRONICS CORPORATION
- Takashi Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR, AND MULTILAYERED EPITAXIAL FILM FOR USE IN...
- Publication number 20140367743
- Publication date Dec 18, 2014
- Takashi Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH REDUCED GATE LEAKAGE CURRENT
- Publication number 20120217547
- Publication date Aug 30, 2012
- NEC Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20120012995
- Publication date Jan 19, 2012
- NEC Corporation
- Naotaka Kuroda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR
- Publication number 20100224910
- Publication date Sep 9, 2010
- NEC Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT SIMULATOR, CIRCUIT SIMULATION METHOD AND PROGRAM
- Publication number 20100057412
- Publication date Mar 4, 2010
- NEC Corporation
- Masahiro Tanomura
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Semiconductor device
- Publication number 20100007013
- Publication date Jan 14, 2010
- Naotaka Kuroda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR
- Publication number 20090267114
- Publication date Oct 29, 2009
- NEC Corporation
- Tatsuo Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR, AND MULTILAYERED EPITAXIAL FILM FOR USE IN...
- Publication number 20090045438
- Publication date Feb 19, 2009
- Takashi Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20080230807
- Publication date Sep 25, 2008
- NEC ELECTRONICS CORPORATION
- Naotaka Kuroda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for producing gallium nitride crystal substrate, and galliu...
- Publication number 20020175340
- Publication date Nov 28, 2002
- Masatomo Shibata
- C30 - CRYSTAL GROWTH

Naotaka Kuroda

Person

Patents Grantslast 30 patents

Field effect transistor, and multilayered epitaxial film for use in...

Field effect transistor, and multilayered epitaxial film for use in...

Semiconductor device and heat sink with 3-dimensional thermal condu...

Field effect transistor with reduced gate leakage current

Circuit simulator, circuit simulation method and program

Field effect transistor with reduced gate leakage current

Semiconductor device and heat sink with 3-dimensional thermal condu...

Transistor with heat dissipating means

Process for producing gallium nitride crystal substrate, and galliu...

Patents Applicationslast 30 patents

FIELD EFFECT TRANSISTOR AND MULTILAYERED EPITAXIAL FILM FOR USE IN...

FIELD EFFECT TRANSISTOR, AND MULTILAYERED EPITAXIAL FILM FOR USE IN...

FIELD EFFECT TRANSISTOR WITH REDUCED GATE LEAKAGE CURRENT

Semiconductor device

FIELD EFFECT TRANSISTOR

CIRCUIT SIMULATOR, CIRCUIT SIMULATION METHOD AND PROGRAM

Semiconductor device

FIELD EFFECT TRANSISTOR

FIELD EFFECT TRANSISTOR, AND MULTILAYERED EPITAXIAL FILM FOR USE IN...

Semiconductor Device

Process for producing gallium nitride crystal substrate, and galliu...