Naoyoshi Tamura

Person

Yamato, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Connecting device
- Patent number 10,147,993
- Issue date Dec 4, 2018
- Molex, LLC
- Tomonari Nakata
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 9,865,734
- Issue date Jan 9, 2018
- SOCIONEXT INC.
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-frequency wave transmitting device including a connecting port...
- Patent number 9,577,309
- Issue date Feb 21, 2017
- Molex, LLC
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 9,577,098
- Issue date Feb 21, 2017
- SOCIONEXT INC.
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 9,431,285
- Issue date Aug 30, 2016
- Fujitsu Semiconductor Limited
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 9,401,427
- Issue date Jul 26, 2016
- SOCIONEXT INC.
- Yosuke Shimamune
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 9,390,960
- Issue date Jul 12, 2016
- Fujitsu Semiconductor Limited
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 9,214,524
- Issue date Dec 15, 2015
- Fujitsu Semiconductor Limited
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 9,112,027
- Issue date Aug 18, 2015
- SOCIONEXT INC.
- Yosuke Shimamune
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 8,853,673
- Issue date Oct 7, 2014
- Fujitsu Semiconductor Limited
- Yosuke Shimamune
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for manufacturing semiconductor device with multiple carbon...
- Patent number 8,765,560
- Issue date Jul 1, 2014
- Fujitsu Semiconductor Limited
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid connector
- Patent number 8,740,477
- Issue date Jun 3, 2014
- Molex Incorporated
- Naoyoshi Tamura
- G02 - OPTICS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 8,741,721
- Issue date Jun 3, 2014
- Fujitsu Semiconductor Limited
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 8,703,596
- Issue date Apr 22, 2014
- Fujitsu Semiconductor Limited
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 8,586,438
- Issue date Nov 19, 2013
- Fujitsu Semiconductor Limited
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,551,849
- Issue date Oct 8, 2013
- Fujitsu Semiconductor Limited
- Naoyoshi Tamura
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,518,785
- Issue date Aug 27, 2013
- Fujitsu Semiconductor Limited
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a plurality of phosphorus-doped silicon...
- Patent number 8,519,486
- Issue date Aug 27, 2013
- Fujitsu Semiconductor Limited
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 8,502,284
- Issue date Aug 6, 2013
- Fujitsu Semiconductor Limited
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device having silicon carbide...
- Patent number 8,501,571
- Issue date Aug 6, 2013
- Fujitsu Semiconductor Limited
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 8,466,450
- Issue date Jun 18, 2013
- Fujitsu Semiconductor Limited
- Yosuke Shimamune
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 8,338,831
- Issue date Dec 25, 2012
- Fujitsu Semiconductor Limited
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,278,177
- Issue date Oct 2, 2012
- Fujitsu Semiconductor Limited
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 8,269,256
- Issue date Sep 18, 2012
- Fujitsu Semiconductor Limited
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture of semiconductor device with stress structure
- Patent number 8,247,283
- Issue date Aug 21, 2012
- Fujitsu Semiconductor Limited
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture of semiconductor device with stress structure
- Patent number 8,247,284
- Issue date Aug 21, 2012
- Fujitsu Semiconductor Limited
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device comprising active regi...
- Patent number 8,232,180
- Issue date Jul 31, 2012
- Fujitsu Semiconductor Limited
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,207,042
- Issue date Jun 26, 2012
- Fujitsu Semiconductor Limited
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and production method thereof
- Patent number 8,164,085
- Issue date Apr 24, 2012
- Fujitsu Semiconductor Limited
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-channel MOS transistor and fabrication process thereof
- Patent number 8,158,498
- Issue date Apr 17, 2012
- Fujitsu Semiconductor Limited
- Masashi Shima
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GUIDEWIRE, A METHOD FOR MANUFACTURING A GUIDEWIRE, AND A CONNECTOR...
- Publication number 20200306508
- Publication date Oct 1, 2020
- Molex, LLC
- Naoyoshi TAMURA
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Application
CABLE ASSEMBLY, CABLE HOLDER, AND PRODUCTION METHOD FOR CABLE ASSEMBLY
- Publication number 20200203854
- Publication date Jun 25, 2020
- Molex, LLC
- Naoyoshi TAMURA
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20170117412
- Publication date Apr 27, 2017
- SOCIONEXT INC.
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONNECTING DEVICE
- Publication number 20170054194
- Publication date Feb 23, 2017
- Molex, LLC
- Tomonari NAKATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20160308053
- Publication date Oct 20, 2016
- SOCIONEXT INC.
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20150295086
- Publication date Oct 15, 2015
- SOCIONEXT INC.
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20140361340
- Publication date Dec 11, 2014
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-FREQUENCY TRANSMISSION DEVICE
- Publication number 20140333388
- Publication date Nov 13, 2014
- Molex Incorporated
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20130280897
- Publication date Oct 24, 2013
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20130248930
- Publication date Sep 26, 2013
- FUJITSU SEMICONDUCTOR LIMITED
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20130196482
- Publication date Aug 1, 2013
- FUJITSU SEMICONDUCTOR LIMITED
- Naoyoshi Tamura
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20130005134
- Publication date Jan 3, 2013
- FUJITSU SEMICONDUCTOR LIMITED
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20120329229
- Publication date Dec 27, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20120309176
- Publication date Dec 6, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20120171829
- Publication date Jul 5, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20120171834
- Publication date Jul 5, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20120135574
- Publication date May 31, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Naoyoshi TAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID CONNECTOR
- Publication number 20120121223
- Publication date May 17, 2012
- Molex Incorporated
- Naoyoshi Tamura
- G02 - OPTICS
Information Patent Application
MANUFACTURE OF SEMICONDUCTOR DEVICE WITH STRESS STRUCTURE
- Publication number 20120045878
- Publication date Feb 23, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURE OF SEMICONDUCTOR DEVICE WITH STRESS STRUCTURE
- Publication number 20120040502
- Publication date Feb 16, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20120009750
- Publication date Jan 12, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20110217847
- Publication date Sep 8, 2011
- FUJITSU SEMICONDUCTOR LIMITED
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
- Publication number 20110049533
- Publication date Mar 3, 2011
- FUJITSU SEMICONDUCTOR LIMITED
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20110027965
- Publication date Feb 3, 2011
- FUJITSU SEMICONDUCTOR LIMITED
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20100320546
- Publication date Dec 23, 2010
- FUJITSU SEMICONDUCTOR LIMITED
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20100301350
- Publication date Dec 2, 2010
- FUJITSU SEMICONDUCTOR LIMITED
- Naoyoshi Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20100301394
- Publication date Dec 2, 2010
- FUJITSU SEMICONDUCTOR LIMITED
- Yosuke Shimamune
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURE METHOD FOR SEMICONDUCTOR DEVICE WHOSE GATE INSULATING F...
- Publication number 20100178744
- Publication date Jul 15, 2010
- Fujitsu Microelectronics Limited
- Haruhiko Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
- Publication number 20100129971
- Publication date May 27, 2010
- FUJITSU MICROELECTRONICS LIMITED
- Hiroyuki Ohta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURE OF SEMICONDUCTOR DEVICE WITH STRESS STRUCTURE
- Publication number 20100047978
- Publication date Feb 25, 2010
- Fujitsu Microelectronics Limited
- Naoyoshi TAMURA
- H01 - BASIC ELECTRIC ELEMENTS

Naoyoshi Tamura

Person

Patents Grantslast 30 patents

Connecting device

Semiconductor device and fabrication method thereof

High-frequency wave transmitting device including a connecting port...

Semiconductor device and fabrication method thereof

Method of manufacturing semiconductor device

Semiconductor device and fabrication method thereof

Method of manufacturing semiconductor device

Method of manufacturing a semiconductor device

Semiconductor device and fabrication method thereof

Semiconductor device and fabrication method thereof

Method for manufacturing semiconductor device with multiple carbon...

Hybrid connector

Semiconductor device and manufacturing method thereof

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device and manufacturing method thereof

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Semiconductor device having a plurality of phosphorus-doped silicon...

Semiconductor device and method of manufacturing semiconductor device

Method of manufacturing semiconductor device having silicon carbide...

Semiconductor device and fabrication method thereof

Semiconductor device and manufacturing method thereof

Semiconductor device and method of manufacturing the same

Semiconductor device and manufacturing method thereof

Manufacture of semiconductor device with stress structure

Manufacture of semiconductor device with stress structure

Manufacturing method of semiconductor device comprising active regi...

Semiconductor device and method of manufacturing the same

Semiconductor device and production method thereof

P-channel MOS transistor and fabrication process thereof

Patents Applicationslast 30 patents

GUIDEWIRE, A METHOD FOR MANUFACTURING A GUIDEWIRE, AND A CONNECTOR...

CABLE ASSEMBLY, CABLE HOLDER, AND PRODUCTION METHOD FOR CABLE ASSEMBLY

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

CONNECTING DEVICE

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

HIGH-FREQUENCY TRANSMISSION DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

HYBRID CONNECTOR

MANUFACTURE OF SEMICONDUCTOR DEVICE WITH STRESS STRUCTURE

MANUFACTURE OF SEMICONDUCTOR DEVICE WITH STRESS STRUCTURE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

MANUFACTURE METHOD FOR SEMICONDUCTOR DEVICE WHOSE GATE INSULATING F...

SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF

MANUFACTURE OF SEMICONDUCTOR DEVICE WITH STRESS STRUCTURE