Naoyuki KAWABATA

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including an active region that includes a swi...
- Patent number 11,189,689
- Issue date Nov 30, 2021
- Mitsubishi Electric Corporation
- Masayuki Furuhashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing SiC epitaxial wafer
- Patent number 9,988,738
- Issue date Jun 5, 2018
- Mitsubishi Electric Corporation
- Nobuyuki Tomita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 9,722,017
- Issue date Aug 1, 2017
- Mitsubishi Electric Corporation
- Takaaki Tominaga
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20240405077
- Publication date Dec 5, 2024
- Mitsubishi Electric Corporation
- Naoyuki KAWABATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE
- Publication number 20230335410
- Publication date Oct 19, 2023
- Mitsubishi Electric Corporation
- Akira KIYOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER
- Publication number 20230215921
- Publication date Jul 6, 2023
- Mitsubishi Electric Corporation
- Yuichi NAGAHISA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER
- Publication number 20230133459
- Publication date May 4, 2023
- Mitsubishi Electric Corporation
- Takanori TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING S...
- Publication number 20230006045
- Publication date Jan 5, 2023
- Mitsubishi Electric Corporation
- Naoyuki KAWABATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200235203
- Publication date Jul 23, 2020
- Mitsubishi Electric Corporation
- Masayuki FURUHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE SEMICONDUC...
- Publication number 20160336392
- Publication date Nov 17, 2016
- Mitsubishi Electric Corporation
- Takaaki TOMINAGA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC EPITAXIAL WAFER PRODUCTION METHOD
- Publication number 20150354090
- Publication date Dec 10, 2015
- MITSUBISHI ELECTRIC CORPORATION
- Nobuyuki TOMITA
- C30 - CRYSTAL GROWTH

Naoyuki KAWABATA

Person

Patents Grantslast 30 patents

Semiconductor device including an active region that includes a swi...

Method for manufacturing SiC epitaxial wafer

Silicon carbide semiconductor device

Patents Applicationslast 30 patents

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER

SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING S...

SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE SEMICONDUC...

SIC EPITAXIAL WAFER PRODUCTION METHOD