Narasimhulu Kanike

Person

Wappingers Falls, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit (IC) chip having both metal and silicon gate fie...
- Patent number 9,012,283
- Issue date Apr 21, 2015
- International Business Machines Corporation
- Narasimhulu Kanike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a body-contacted SOI FINFET
- Patent number 8,993,402
- Issue date Mar 31, 2015
- International Business Machines Corporation
- Narasimhulu Kanike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High threshold voltage NMOS transistors for low power IC technology
- Patent number 8,969,969
- Issue date Mar 3, 2015
- International Business Machines Corporation
- Victor W. C. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High threshold voltage NMOS transistors for low power IC technology
- Patent number 8,927,361
- Issue date Jan 6, 2015
- International Business Machines Corporation
- Roger Allen Booth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of fin-based devices and ETSOI devices
- Patent number 8,779,511
- Issue date Jul 15, 2014
- International Business Machines Corporation
- Narasimhulu Kanike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Poly resistor and metal gate fabrication and structure
- Patent number 8,377,763
- Issue date Feb 19, 2013
- International Business Machines Corporation
- Narasimhulu Kanike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an embedded polysilicon resistor and an embed...
- Patent number 8,377,790
- Issue date Feb 19, 2013
- International Business Machines Corporation
- Narasimhulu Kanike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of fin-based devices and ETSOI devices
- Patent number 8,236,634
- Issue date Aug 7, 2012
- International Business Machines Corporation
- Narasimhulu Kanike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor embedded resistor generation
- Patent number 8,012,821
- Issue date Sep 6, 2011
- Samsung Electronics Co., Ltd.
- Choongryul Ryou
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of Manufacturing a Body-Contacted SOI FINFET
- Publication number 20140048881
- Publication date Feb 20, 2014
- International Business Machines Corporation
- Narasimhulu Kanike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH THRESHOLD VOLTAGE NMOS TRANSISTORS FOR LOW POWER IC TECHNOLOGY
- Publication number 20130196476
- Publication date Aug 1, 2013
- International Business Machines Corporation
- Roger Allen Booth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit (IC) Chip Having Both Metal and Silicon Gate Fie...
- Publication number 20120292664
- Publication date Nov 22, 2012
- International Business Machines Corporation
- Narasimhulu Kanike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF FIN-BASED DEVICES AND ETSOI DEVICES
- Publication number 20120261756
- Publication date Oct 18, 2012
- International Business Machines Corporation
- Narasimhulu Kanike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATION BODIES FOR AN EMBEDDED POLYSILICON RESISTOR A...
- Publication number 20120196423
- Publication date Aug 2, 2012
- International Business Machines Corporation
- Narasimhulu Kanike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Poly Resistor and Metal Gate Fabrication and Structure
- Publication number 20120139049
- Publication date Jun 7, 2012
- International Business Machines Corporation
- Narasimhulu Kanike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Threshold Voltage NMOS Transistors For Low Power IC Technology
- Publication number 20100237425
- Publication date Sep 23, 2010
- International Business Machines Corporation
- Victor W.C. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR EMBEDDED RESISTOR GENERATION
- Publication number 20100197106
- Publication date Aug 5, 2010
- Samsung Electronics Co., Ltd.
- Choongryul Ryou
- H01 - BASIC ELECTRIC ELEMENTS

Narasimhulu Kanike

Person

Patents Grantslast 30 patents

Integrated circuit (IC) chip having both metal and silicon gate fie...

Method of manufacturing a body-contacted SOI FINFET

High threshold voltage NMOS transistors for low power IC technology

High threshold voltage NMOS transistors for low power IC technology

Integration of fin-based devices and ETSOI devices

Poly resistor and metal gate fabrication and structure

Method of fabricating an embedded polysilicon resistor and an embed...

Integration of fin-based devices and ETSOI devices

Semiconductor embedded resistor generation

Patents Applicationslast 30 patents

Method of Manufacturing a Body-Contacted SOI FINFET

HIGH THRESHOLD VOLTAGE NMOS TRANSISTORS FOR LOW POWER IC TECHNOLOGY

Integrated Circuit (IC) Chip Having Both Metal and Silicon Gate Fie...

INTEGRATION OF FIN-BASED DEVICES AND ETSOI DEVICES

METHOD OF FABRICATION BODIES FOR AN EMBEDDED POLYSILICON RESISTOR A...

Poly Resistor and Metal Gate Fabrication and Structure

High Threshold Voltage NMOS Transistors For Low Power IC Technology

SEMICONDUCTOR EMBEDDED RESISTOR GENERATION