Nariaki IKEDA

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
GaN-based semiconductor element
- Patent number 8,729,603
- Issue date May 20, 2014
- Furukawa Electric Co., Ltd.
- Nariaki Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 8,569,800
- Issue date Oct 29, 2013
- Furukawa Electric Co., Ltd.
- Nariaki Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,525,225
- Issue date Sep 3, 2013
- The Furukawa Electric Co., Ltd.
- Hiroshi Kambayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor, method of manufacturing field effect trans...
- Patent number 8,450,782
- Issue date May 28, 2013
- Furukawa Electric Co., Ltd.
- Yoshihiro Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor and method for fabricating the same
- Patent number 8,304,774
- Issue date Nov 6, 2012
- Furukawa Electric Co., Ltd.
- Shusuke Kaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based semiconductor device and method of manufacturing the same
- Patent number 8,304,809
- Issue date Nov 6, 2012
- Furukawa Electric Co., Ltd.
- Shusuke Kaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN semiconductor device having a high withstand voltage
- Patent number 8,183,597
- Issue date May 22, 2012
- Furukawa Electric Co., Ltd.
- Nariaki Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based semiconductor element
- Patent number 8,178,898
- Issue date May 15, 2012
- Furukawa Electric Co., Ltd.
- Nariaki Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 8,035,128
- Issue date Oct 11, 2011
- Furukawa Electric Co., Ltd.
- Nariaki Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing GaN-based transistors
- Patent number 7,943,496
- Issue date May 17, 2011
- Furukawa Electric Co., Ltd.
- Takehiko Nomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN based semiconductor element
- Patent number 7,812,371
- Issue date Oct 12, 2010
- Furukawa Electric Co., Ltd.
- Shusuke Kaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical device having a carrier-depleted layer
- Patent number 6,911,713
- Issue date Jun 28, 2005
- The Furukawa Electric Co., Ltd.
- Nariaki Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor optical device and method for fabricating same
- Patent number 6,821,798
- Issue date Nov 23, 2004
- The Furukawa Electric Co., Ltd.
- Satoshi Arakawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GaN-BASED SEMICONDUCTOR ELEMENT
- Publication number 20120193639
- Publication date Aug 2, 2012
- FURUKAWA ELECTRIC CO., LTD.
- Nariaki IKEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20110318913
- Publication date Dec 29, 2011
- FURUKAWA ELECTRIC CO., LTD.
- Nariaki Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20110316048
- Publication date Dec 29, 2011
- FURUKAWA ELECTRIC CO., LTD.
- Nariaki Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR
- Publication number 20110241017
- Publication date Oct 6, 2011
- FURUKAWA ELECTRIC CO., LTD.
- Nariaki IKEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR, METHOD OF MANUFACTURING FIELD EFFECT TRANS...
- Publication number 20110241088
- Publication date Oct 6, 2011
- FURUKAWA ELECTRIC CO., LTD.
- Yoshihiro SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20110198669
- Publication date Aug 18, 2011
- FURUKAWA ELECTRIC CO., LTD.
- Shusuke Kaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING GAN-BASED TRANSISTORS
- Publication number 20100210080
- Publication date Aug 19, 2010
- FURUKAWA ELECTRIC CO., LTD.
- Takehiko Nomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of producing the same
- Publication number 20100117186
- Publication date May 13, 2010
- Hiroshi Kambayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20100117146
- Publication date May 13, 2010
- FURUKAWA ELECTRIC CO., LTD.
- Nariaki Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN-BASED SEMICONDUCTOR ELEMENT
- Publication number 20100032683
- Publication date Feb 11, 2010
- Nariaki Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN based semiconductor element
- Publication number 20090278172
- Publication date Nov 12, 2009
- Shusuke Kaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN-based semiconductor device and method of manufacturing the same
- Publication number 20090140295
- Publication date Jun 4, 2009
- Shusuke Kaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF FORMING ELECTRODE
- Publication number 20080006846
- Publication date Jan 10, 2008
- The Furukawa Electric Co, Ltd.
- Nariaki Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN SEMICONDUCTOR DEVICE
- Publication number 20070210335
- Publication date Sep 13, 2007
- THE FURUKAWA ELECTRIC CO., LTD.
- Nariaki Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20070051979
- Publication date Mar 8, 2007
- The Furukawa Electric Co, Ltd.
- Hiroshi Kambayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optical device having a carrier-depleted layer
- Publication number 20040048406
- Publication date Mar 11, 2004
- THE FURUKAWA ELECTRIC CO., LTD.
- Nariaki Ikeda
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor optical device and method for fabricating same
- Publication number 20020105992
- Publication date Aug 8, 2002
- The Furukawa Electric CO., LTD
- Satoshi Arakawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor optical device having reduced parasitic capacitance
- Publication number 20020100911
- Publication date Aug 1, 2002
- The Furukawa Electric CO., LTD
- Satoshi Arakawa
- B82 - NANO-TECHNOLOGY

Nariaki IKEDA

Person

Patents Grantslast 30 patents

GaN-based semiconductor element

Field effect transistor

Semiconductor device

Field effect transistor, method of manufacturing field effect trans...

Transistor and method for fabricating the same

GaN-based semiconductor device and method of manufacturing the same

GaN semiconductor device having a high withstand voltage

GaN-based semiconductor element

Semiconductor device and method for fabricating the same

Method of manufacturing GaN-based transistors

GaN based semiconductor element

Optical device having a carrier-depleted layer

Semiconductor optical device and method for fabricating same

Patents Applicationslast 30 patents

GaN-BASED SEMICONDUCTOR ELEMENT

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

FIELD EFFECT TRANSISTOR

FIELD EFFECT TRANSISTOR, METHOD OF MANUFACTURING FIELD EFFECT TRANS...

TRANSISTOR AND METHOD FOR FABRICATING THE SAME

METHOD OF MANUFACTURING GAN-BASED TRANSISTORS

Semiconductor device and method of producing the same

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

GaN-BASED SEMICONDUCTOR ELEMENT

GaN based semiconductor element

GaN-based semiconductor device and method of manufacturing the same

III-V NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF FORMING ELECTRODE

GaN SEMICONDUCTOR DEVICE

Semiconductor device

Optical device having a carrier-depleted layer

Semiconductor optical device and method for fabricating same

Semiconductor optical device having reduced parasitic capacitance