Naruhito Iwasa

Person

Komatsushima-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Nitride semiconductor with active layer of quantum well structure w...
- Patent number 8,304,790
- Issue date Nov 6, 2012
- Nichia Corporation
- Shuji Nakamura
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nitride semiconductor device having a nitride semiconductor substra...
- Patent number RE42770
- Issue date Oct 4, 2011
- Nichia Corporation
- Hiroyuki Kiyoku
- 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
Information Patent Grant
Nitride semiconductor device having a nitride semiconductor substra...
- Patent number 7,442,254
- Issue date Oct 28, 2008
- Nichia Corporation
- Hiroyuki Kiyoku
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitride semiconductor with active layer of quantum well structure w...
- Patent number 7,166,869
- Issue date Jan 23, 2007
- Nichia Corporation
- Shuji Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor with active layer of quantum well structure w...
- Patent number 7,166,874
- Issue date Jan 23, 2007
- Nichia Corporation
- Shuji Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor growth method, nitride semiconductor substrat...
- Patent number 7,154,128
- Issue date Dec 26, 2006
- Nichia Chemical Industries, Limited
- Hiroyuki Kiyoku
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitride semiconductor growth method, nitride semiconductor substrat...
- Patent number 7,083,679
- Issue date Aug 1, 2006
- Nichia Corporation
- Hiroyuki Kiyoku
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitride semiconductor growth method, nitride semiconductor substrat...
- Patent number 6,940,103
- Issue date Sep 6, 2005
- Nichia Chemical Industries, Ltd.
- Hiroyuki Kiyoku
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitride semiconductor light-emitting device
- Patent number 6,900,465
- Issue date May 31, 2005
- Nichia Corporation
- Shuji Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting gallium nitride-based compound semiconductor device
- Patent number 6,791,103
- Issue date Sep 14, 2004
- Nichia Corporation
- Shuji Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor growth method, nitride semiconductor substrat...
- Patent number 6,756,611
- Issue date Jun 29, 2004
- Nichia Chemical Industries, Ltd.
- Hiroyuki Kiyoku
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitride semiconductor light-emitting devices
- Patent number 6,580,099
- Issue date Jun 17, 2003
- Nichia Chemical Industries, Ltd.
- Shuji Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting gallium nitride-based compound semiconductor device
- Patent number 6,469,323
- Issue date Oct 22, 2002
- Nichia Chemical Industries, Ltd.
- Shuji Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting gallium nitride-based compound semiconductor device
- Patent number 6,215,133
- Issue date Apr 10, 2001
- Nichia Chemical Industries, Ltd.
- Shuji Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing nitride semiconductors, nitride semiconductor sub...
- Patent number 6,153,010
- Issue date Nov 28, 2000
- Nichia Chemical Industries Ltd.
- Hiroyuki Kiyoku
- C30 - CRYSTAL GROWTH
Information Patent Grant
Light-emitting gallium nitride-based compound semiconductor device
- Patent number 6,078,063
- Issue date Jun 20, 2000
- Nichia Chemical Industries Ltd.
- Shuji Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 5,959,307
- Issue date Sep 28, 1999
- Nichia Chemical Industries Ltd.
- Shuji Nakamura
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Light-emitting gallium nitride-based compound semiconductor device
- Patent number 5,880,486
- Issue date Mar 9, 1999
- Nichia Chemical Industries, Ltd.
- Shuji Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor light-emitting device
- Patent number 5,777,350
- Issue date Jul 7, 1998
- Nichia Chemical Industries, Ltd.
- Shuji Nakamura
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Light-emitting gallium nitride-based compound semiconductor device
- Patent number 5,747,832
- Issue date May 5, 1998
- Nichia Chemical Industries, Ltd.
- Shuji Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting gallium nitride-based compound semiconducor device
- Patent number 5,734,182
- Issue date Mar 31, 1998
- Nichia Chemical Industries Ltd.
- Shuji Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting gallium nitride-based compound semiconductor device
- Patent number 5,578,839
- Issue date Nov 26, 1996
- Nichia Chemical Industries, Ltd.
- Shuji Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing P-type compound semiconductor
- Patent number 5,468,678
- Issue date Nov 21, 1995
- Nichia Chemical Industries, Ltd.
- Shuji Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing P-type compound semiconductor
- Patent number 5,306,662
- Issue date Apr 26, 1994
- Nichia Chemical Industries, Ltd.
- Shuji Nakamura
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Nitride semiconductor with active layer of quantum well structure w...
- Publication number 20070272915
- Publication date Nov 29, 2007
- NICHIA CORPORATION
- Shuji Nakamura
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nitride semiconductor growth method, nitride semiconductor substrat...
- Publication number 20070057276
- Publication date Mar 15, 2007
- Nichia Chemical Industries, Ltd.
- Hiroyuki Kiyoku
- C30 - CRYSTAL GROWTH
Information Patent Application
Nitride semiconductor growth method, nitride semiconductor substrat...
- Publication number 20050202682
- Publication date Sep 15, 2005
- Nichia Chemical Industries, Ltd.
- Hiroyuki Kiyoku
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR WITH ACTIVE LAYER OF WELL STRUCTURE WITH INDI...
- Publication number 20040183063
- Publication date Sep 23, 2004
- Nichia Corporation
- Shuji Nakamura
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nitride semiconductor with active layer of quantum well structure w...
- Publication number 20040101012
- Publication date May 27, 2004
- Nichia Corporation
- Shuji Nakamura
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nitride semiconductor growth method, nitride semiconductor substrat...
- Publication number 20040094773
- Publication date May 20, 2004
- Nichia Chemical Industries, Ltd.
- Hiroyuki Kiyoku
- C30 - CRYSTAL GROWTH
Information Patent Application
Light-emitting gallium nitride-based compound semiconductor device
- Publication number 20030216011
- Publication date Nov 20, 2003
- Nichia Chemical Industries Ltd.
- Shuji Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride semiconductor growth method, nitride semiconductor substrat...
- Publication number 20030037722
- Publication date Feb 27, 2003
- Nichia Chemical Industries, Ltd.
- Hiroyuki Kiyoku
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nitride semiconductor device
- Publication number 20030015724
- Publication date Jan 23, 2003
- Nichia Chemical Industries, Ltd.
- Shuji Nakamura
- B82 - NANO-TECHNOLOGY
Information Patent Application
Light-emitting gallium nitride-based compound semiconductor device
- Publication number 20030006424
- Publication date Jan 9, 2003
- Nichia Chemical Industries Ltd.
- Shuji Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride semiconductor light-emitting device
- Publication number 20020167019
- Publication date Nov 14, 2002
- Nichia Chemical Industries, Ltd.
- Shuji Nakamura
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nitride semiconductor growth method, nitride semiconductor substrat...
- Publication number 20020046693
- Publication date Apr 25, 2002
- Nichia Chemical Industries, Ltd.
- Hiroyuki Kiyoku
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nitride semiconductor light-emitting device
- Publication number 20010030318
- Publication date Oct 18, 2001
- Shuji Nakamura
- B82 - NANO-TECHNOLOGY

Naruhito Iwasa

Person

Patents Grantslast 30 patents

Nitride semiconductor with active layer of quantum well structure w...

Nitride semiconductor device having a nitride semiconductor substra...

Nitride semiconductor device having a nitride semiconductor substra...

Nitride semiconductor with active layer of quantum well structure w...

Nitride semiconductor with active layer of quantum well structure w...

Nitride semiconductor growth method, nitride semiconductor substrat...

Nitride semiconductor growth method, nitride semiconductor substrat...

Nitride semiconductor growth method, nitride semiconductor substrat...

Nitride semiconductor light-emitting device

Light-emitting gallium nitride-based compound semiconductor device

Nitride semiconductor growth method, nitride semiconductor substrat...

Nitride semiconductor light-emitting devices

Light-emitting gallium nitride-based compound semiconductor device

Light-emitting gallium nitride-based compound semiconductor device

Method of growing nitride semiconductors, nitride semiconductor sub...

Light-emitting gallium nitride-based compound semiconductor device

Nitride semiconductor device

Light-emitting gallium nitride-based compound semiconductor device

Nitride semiconductor light-emitting device

Light-emitting gallium nitride-based compound semiconductor device

Light-emitting gallium nitride-based compound semiconducor device

Light-emitting gallium nitride-based compound semiconductor device

Method of manufacturing P-type compound semiconductor

Method of manufacturing P-type compound semiconductor

Patents Applicationslast 30 patents

Nitride semiconductor with active layer of quantum well structure w...

Nitride semiconductor growth method, nitride semiconductor substrat...

Nitride semiconductor growth method, nitride semiconductor substrat...

NITRIDE SEMICONDUCTOR WITH ACTIVE LAYER OF WELL STRUCTURE WITH INDI...

Nitride semiconductor with active layer of quantum well structure w...

Nitride semiconductor growth method, nitride semiconductor substrat...

Light-emitting gallium nitride-based compound semiconductor device

Nitride semiconductor growth method, nitride semiconductor substrat...

Nitride semiconductor device

Light-emitting gallium nitride-based compound semiconductor device

Nitride semiconductor light-emitting device

Nitride semiconductor growth method, nitride semiconductor substrat...

Nitride semiconductor light-emitting device