Natalie Barbara Feilchenfeld

Person

Jericho, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Lateral PiN diodes and schottky diodes
- Patent number 10,535,551
- Issue date Jan 14, 2020
- GLOBALFOUNDRIES Inc.
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device structures for a silicon-on-insulator substrate with a high-...
- Patent number 10,446,644
- Issue date Oct 15, 2019
- GLOBALFOUNDRIES Inc.
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tapered gate oxide in LDMOS devices
- Patent number 10,050,115
- Issue date Aug 14, 2018
- GLOBALFOUNDRIES Inc.
- Brennan J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral PiN diodes and schottky diodes
- Patent number 9,947,573
- Issue date Apr 17, 2018
- GLOBALFOUNDRIES Inc.
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures with contact trenches and isolation trenches
- Patent number 9,893,157
- Issue date Feb 13, 2018
- GLOBALFOUNDRIES Inc.
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with a dopant implant region having a linea...
- Patent number 9,799,652
- Issue date Oct 24, 2017
- GLOBALFOUNDRIES Inc.
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with isolated ohmic trenches and stand-alo...
- Patent number 9,786,606
- Issue date Oct 10, 2017
- GLOBALFOUNDRIES Inc.
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with a dopant implant region having a linea...
- Patent number 9,768,028
- Issue date Sep 19, 2017
- GLOBALFOUNDRIES Inc.
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual shallow trench isolation (STI) structure for field effect tran...
- Patent number 9,595,579
- Issue date Mar 14, 2017
- GLOBALFOUNDRIES Inc.
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with isolated ohmic trenches and stand-alo...
- Patent number 9,324,632
- Issue date Apr 26, 2016
- GLOBALFOUNDRIES Inc.
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned bipolar junction transistor having self-planarizing is...
- Patent number 9,202,869
- Issue date Dec 1, 2015
- GLOBALFOUNDRIES Inc.
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage laterally diffused metal oxide semiconductor
- Patent number 9,059,276
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral diffusion field effect transistor with drain region self-al...
- Patent number 8,946,013
- Issue date Feb 3, 2015
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interdigitated capacitors with a zero quadratic voltage coefficient...
- Patent number 8,901,710
- Issue date Dec 2, 2014
- International Business Machines Corporation
- Frederick G. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated zener diode, an integrated circuit incorporating multiple...
- Patent number 8,796,108
- Issue date Aug 5, 2014
- International Business Machines Corporation
- Frederick G. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with raised extrinsic self-aligned base using se...
- Patent number 8,525,293
- Issue date Sep 3, 2013
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated Zener diode
- Patent number 8,492,866
- Issue date Jul 23, 2013
- International Business Machines Corporation
- Frederick G. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with raised extrinsic self-aligned base using se...
- Patent number 8,236,662
- Issue date Aug 7, 2012
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of multiple gate oxides with shallow trench isolation m...
- Patent number 8,227,318
- Issue date Jul 24, 2012
- International Business Machines Corporation
- Max Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for creation of a metal insulator metal capacitor
- Patent number 8,227,849
- Issue date Jul 24, 2012
- International Business Machines Corporation
- Ebenezer E. Eshun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral diffusion field effect transistor with drain region self-al...
- Patent number 8,114,750
- Issue date Feb 14, 2012
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral diffusion field effect transistor with a trench field plate
- Patent number 7,956,412
- Issue date Jun 7, 2011
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures including means for lateral current carrying capability...
- Patent number 7,904,868
- Issue date Mar 8, 2011
- International Business Machines Corporation
- Natalie Barbara Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with raised extrinsic self-aligned base using se...
- Patent number 7,892,910
- Issue date Feb 22, 2011
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modifying layout of IC based on function of interconnect and relate...
- Patent number 7,886,240
- Issue date Feb 8, 2011
- International Business Machines Corporation
- James W. Adkisson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Optimized device isolation
- Patent number 7,868,423
- Issue date Jan 11, 2011
- International Business Machines Corporation
- John J. Benoit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral diffusion field effect transistor with asymmetric gate diel...
- Patent number 7,829,945
- Issue date Nov 9, 2010
- International Business Machines Corporation
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for creation of a metal insulator metal capacitor
- Patent number 7,728,372
- Issue date Jun 1, 2010
- International Business Machines Corporation
- Ebenezer E. Eshun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of metal-insulator-metal capacitor simultaneously with al...
- Patent number 7,511,940
- Issue date Mar 31, 2009
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for lateral current carrying capability improvement in semi...
- Patent number 7,453,151
- Issue date Nov 18, 2008
- International Business Machines Corporation
- Natalie Barbara Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LATERAL PiN DIODES AND SCHOTTKY DIODES
- Publication number 20180204761
- Publication date Jul 19, 2018
- GLOBALFOUNDRIES INC.
- Natalie B. FEILCHENFELD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE STRUCTURES FOR A SILICON-ON-INSULATOR SUBSTRATE WITH A HIGH-...
- Publication number 20160372582
- Publication date Dec 22, 2016
- GLOBALFOUNDRIES INC.
- Renata Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TAPERED GATE OXIDE IN LDMOS DEVICES
- Publication number 20160190269
- Publication date Jun 30, 2016
- International Business Machines Corporation
- Brennan J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH ISOLATED OHMIC TRENCHES AND STAND-ALO...
- Publication number 20160190067
- Publication date Jun 30, 2016
- GLOBALFOUNDRIES INC.
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL PiN DIODES AND SCHOTTKY DIODES
- Publication number 20160064475
- Publication date Mar 3, 2016
- International Business Machines Corporation
- Natalie B. FEILCHENFELD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BIPOLAR JUNCTION TRANSISTOR HAVING SELF-PLANARIZING IS...
- Publication number 20160043202
- Publication date Feb 11, 2016
- GLOBALFOUNDRIES INC.
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH ISOLATED OHMIC TRENCHES AND STAND-ALO...
- Publication number 20150348870
- Publication date Dec 3, 2015
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL SHALLOW TRENCH ISOLATION (STI) FIELD EFFECT TRANSISTOR (FET) A...
- Publication number 20150255539
- Publication date Sep 10, 2015
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR
- Publication number 20140346597
- Publication date Nov 27, 2014
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BIPOLAR JUNCTION TRANSISTOR HAVING SELF-PLANARIZING IS...
- Publication number 20140332927
- Publication date Nov 13, 2014
- International Business Machines Corporation
- NATALIE B. FEILCHENFELD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL SHALLOW TRENCH ISOLATION (STI) FIELD EFFECT TRANSISTOR (FET) A...
- Publication number 20140327084
- Publication date Nov 6, 2014
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERDIGITATED CAPACITORS WITH A ZERO QUADRATIC VOLTAGE COEFFICIENT...
- Publication number 20140239448
- Publication date Aug 28, 2014
- International Business Machines Corporation
- Frederick G. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATED ZENER DIODE, AN INTEGRATED CIRCUIT INCORPORATING MULTIPLE...
- Publication number 20130299938
- Publication date Nov 14, 2013
- Frederick G. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATED ZENER DIODE
- Publication number 20130175656
- Publication date Jul 11, 2013
- International Business Machines Corporation
- Frederick G. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH RAISED EXTRINSIC SELF-ALIGNED BASE USING SE...
- Publication number 20120319233
- Publication date Dec 20, 2012
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DIFFUSION FIELD EFFECT TRANSISTOR WITH DRAIN REGION SELF-AL...
- Publication number 20120126319
- Publication date May 24, 2012
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration of Multiple Gate Oxides with Shallow Trench Isolation M...
- Publication number 20110117714
- Publication date May 19, 2011
- International Business Machines Corporation
- Max Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH RAISED EXTRINSIC SELF-ALIGNED BASE USING SE...
- Publication number 20110062548
- Publication date Mar 17, 2011
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR CREATION OF A METAL INSULATOR METAL CAPACITOR
- Publication number 20100149723
- Publication date Jun 17, 2010
- International Business Machines Corporation
- EBENEZER E. ESHUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized Device Isolation
- Publication number 20100117122
- Publication date May 13, 2010
- John J. Benoit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DIFFUSION FIELD EFFECT TRANSISTOR WITH DRAIN REGION SELF-AL...
- Publication number 20090261426
- Publication date Oct 22, 2009
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODIFYING LAYOUT OF IC BASED ON FUNCTION OF INTERCONNECT AND RELATE...
- Publication number 20090193378
- Publication date Jul 30, 2009
- James W. Adkisson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
LATERAL DIFFUSION FIELD EFFECT TRANSISTOR WITH A TRENCH FIELD PLATE
- Publication number 20090140343
- Publication date Jun 4, 2009
- International Business Machines Corporation
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DIFFUSION FIELD EFFECT TRANSISTOR WITH ASYMMETRIC GATE DIEL...
- Publication number 20090108347
- Publication date Apr 30, 2009
- James W. Adkisson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DESIGN STRUCTURES INCLUDING MEANS FOR LATERAL CURRENT CARRYING CAPA...
- Publication number 20090106726
- Publication date Apr 23, 2009
- Natalie Barbara Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL CURRENT CARRYING CAPABILITY IMPROVEMENT IN SEMICONDUCTOR DE...
- Publication number 20080308940
- Publication date Dec 18, 2008
- Natalie Barbara Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH RAISED EXTRINSIC SELF-ALIGNED BASE USING SE...
- Publication number 20080203490
- Publication date Aug 28, 2008
- Natalie B. Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR LATERAL CURRENT CARRYING CAPABILITY IMPROVEMENT IN SEMI...
- Publication number 20080122096
- Publication date May 29, 2008
- Natalie Barbara Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF METAL-INSULATOR-METAL CAPACITOR SIMULTANEOUSLY WITH AL...
- Publication number 20080019077
- Publication date Jan 24, 2008
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR CREATION OF A METAL INSULATOR METAL CAPACITOR
- Publication number 20070262416
- Publication date Nov 15, 2007
- International Business Machines Corporation
- Ebenezer E. Eshun
- H01 - BASIC ELECTRIC ELEMENTS

Natalie Barbara Feilchenfeld

Person

Patents Grantslast 30 patents

Lateral PiN diodes and schottky diodes

Device structures for a silicon-on-insulator substrate with a high-...

Tapered gate oxide in LDMOS devices

Lateral PiN diodes and schottky diodes

Structures with contact trenches and isolation trenches

Semiconductor structure with a dopant implant region having a linea...

Semiconductor structures with isolated ohmic trenches and stand-alo...

Semiconductor structure with a dopant implant region having a linea...

Dual shallow trench isolation (STI) structure for field effect tran...

Semiconductor structures with isolated ohmic trenches and stand-alo...

Self-aligned bipolar junction transistor having self-planarizing is...

High voltage laterally diffused metal oxide semiconductor

Lateral diffusion field effect transistor with drain region self-al...

Interdigitated capacitors with a zero quadratic voltage coefficient...

Isolated zener diode, an integrated circuit incorporating multiple...

Bipolar transistor with raised extrinsic self-aligned base using se...

Isolated Zener diode

Bipolar transistor with raised extrinsic self-aligned base using se...

Integration of multiple gate oxides with shallow trench isolation m...

Method and structure for creation of a metal insulator metal capacitor

Lateral diffusion field effect transistor with drain region self-al...

Lateral diffusion field effect transistor with a trench field plate

Structures including means for lateral current carrying capability...

Bipolar transistor with raised extrinsic self-aligned base using se...

Modifying layout of IC based on function of interconnect and relate...

Optimized device isolation

Lateral diffusion field effect transistor with asymmetric gate diel...

Method and structure for creation of a metal insulator metal capacitor

Formation of metal-insulator-metal capacitor simultaneously with al...

Methods for lateral current carrying capability improvement in semi...

Patents Applicationslast 30 patents

LATERAL PiN DIODES AND SCHOTTKY DIODES

DEVICE STRUCTURES FOR A SILICON-ON-INSULATOR SUBSTRATE WITH A HIGH-...

TAPERED GATE OXIDE IN LDMOS DEVICES

SEMICONDUCTOR STRUCTURES WITH ISOLATED OHMIC TRENCHES AND STAND-ALO...

LATERAL PiN DIODES AND SCHOTTKY DIODES

SELF-ALIGNED BIPOLAR JUNCTION TRANSISTOR HAVING SELF-PLANARIZING IS...

SEMICONDUCTOR STRUCTURES WITH ISOLATED OHMIC TRENCHES AND STAND-ALO...

DUAL SHALLOW TRENCH ISOLATION (STI) FIELD EFFECT TRANSISTOR (FET) A...

HIGH VOLTAGE LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR

SELF-ALIGNED BIPOLAR JUNCTION TRANSISTOR HAVING SELF-PLANARIZING IS...

DUAL SHALLOW TRENCH ISOLATION (STI) FIELD EFFECT TRANSISTOR (FET) A...

INTERDIGITATED CAPACITORS WITH A ZERO QUADRATIC VOLTAGE COEFFICIENT...

ISOLATED ZENER DIODE, AN INTEGRATED CIRCUIT INCORPORATING MULTIPLE...

ISOLATED ZENER DIODE

BIPOLAR TRANSISTOR WITH RAISED EXTRINSIC SELF-ALIGNED BASE USING SE...

LATERAL DIFFUSION FIELD EFFECT TRANSISTOR WITH DRAIN REGION SELF-AL...

Integration of Multiple Gate Oxides with Shallow Trench Isolation M...

BIPOLAR TRANSISTOR WITH RAISED EXTRINSIC SELF-ALIGNED BASE USING SE...

METHOD AND STRUCTURE FOR CREATION OF A METAL INSULATOR METAL CAPACITOR

Optimized Device Isolation

LATERAL DIFFUSION FIELD EFFECT TRANSISTOR WITH DRAIN REGION SELF-AL...

MODIFYING LAYOUT OF IC BASED ON FUNCTION OF INTERCONNECT AND RELATE...

LATERAL DIFFUSION FIELD EFFECT TRANSISTOR WITH A TRENCH FIELD PLATE

LATERAL DIFFUSION FIELD EFFECT TRANSISTOR WITH ASYMMETRIC GATE DIEL...

DESIGN STRUCTURES INCLUDING MEANS FOR LATERAL CURRENT CARRYING CAPA...

LATERAL CURRENT CARRYING CAPABILITY IMPROVEMENT IN SEMICONDUCTOR DE...

BIPOLAR TRANSISTOR WITH RAISED EXTRINSIC SELF-ALIGNED BASE USING SE...

METHODS FOR LATERAL CURRENT CARRYING CAPABILITY IMPROVEMENT IN SEMI...

FORMATION OF METAL-INSULATOR-METAL CAPACITOR SIMULTANEOUSLY WITH AL...

METHOD AND STRUCTURE FOR CREATION OF A METAL INSULATOR METAL CAPACITOR