Nathan Ray PERKINS

Person

Fort Collins, CO, US

People

Patents Grantslast 30 patents

Information Patent Grant
Apparatus and semiconductor structure including a multilayer packag...
- Patent number 10,236,239
- Issue date Mar 19, 2019
- Avago Technologies International Sales Pte. Limited
- Nathan Perkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including a thermally conductive, electrica...
- Patent number 10,032,690
- Issue date Jul 24, 2018
- Avago Technologies General IP (Singapore) Pte. Ltd.
- Nathan Perkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having thermal backside core
- Patent number 9,881,847
- Issue date Jan 30, 2018
- Avago Technologies General IP (Singapore) Pte. Ltd.
- Nathan Perkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having thermal backside core
- Patent number 9,472,484
- Issue date Oct 18, 2016
- Avago Technologies General IP (Singapore) Pte. Ltd.
- Nathan Perkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation for group III-V semiconductor devices having a plated m...
- Patent number 8,941,218
- Issue date Jan 27, 2015
- Avago Technologies General IP (Singapore) Pte. Ltd.
- Nathan Perkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pseudomorphic high electron mobility transistor (pHEMT) comprising...
- Patent number 8,901,606
- Issue date Dec 2, 2014
- Avago Technologies General IP (Singapore) Pte. Ltd.
- Nate Perkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pseudomorphic high electron mobility transistor comprising doped lo...
- Patent number 8,853,743
- Issue date Oct 7, 2014
- Avago Technologies General IP (Singapore) Pte. Ltd.
- Jonathan Abrokwah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a transistor gate with sub-photolithographic d...
- Patent number 8,211,760
- Issue date Jul 3, 2012
- Avago Technologies Wireless IP (Singapore) Pte. Ltd.
- Nathan Ray Perkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a transistor gate with sub-photolithographic d...
- Patent number 7,947,545
- Issue date May 24, 2011
- Avago Technologies Wireless IP (Singapore) Pte. Ltd.
- Nathan Ray Perkins
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Structure Having Thermal Backside Core
- Publication number 20160351466
- Publication date Dec 1, 2016
- Avago Technologies General IP (Singapore) PTE. LTD.
- Nathan Perkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure Including a Thermally Conductive, Electrica...
- Publication number 20160247745
- Publication date Aug 25, 2016
- Avago Technologies General IP (Singapore) PTE. LTD.
- Nathan Perkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure Having Thermal Backside Core
- Publication number 20160240454
- Publication date Aug 18, 2016
- Avago Technologies General IP (Singapore) PTE. LTD.
- Nathan Perkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus and Semiconductor Structure including a Multilayer Packag...
- Publication number 20160225689
- Publication date Aug 4, 2016
- Avago Technologies General IP (Singapore) PTE. LTD.
- Nathan Perkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Passivation for Group III-V Semiconductor Devices Having a Plated M...
- Publication number 20150048484
- Publication date Feb 19, 2015
- Avago Technologies General IP (Singapore) PTE. LTD.
- Nathan Perkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR COMPRISING DOPED LO...
- Publication number 20140138746
- Publication date May 22, 2014
- Jonathan Abrokwah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR (pHEMT) COMPRISING...
- Publication number 20130285119
- Publication date Oct 31, 2013
- Avago Technologies Wireless IP (Singapore) Pte. Lt
- Nate PERKINS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A TRANSISTOR GATE WITH SUB-PHOTOLITHOGRAPHIC D...
- Publication number 20110250743
- Publication date Oct 13, 2011
- Avago Technologies Wireless IP (Singapore) Pte. Ltd.
- Nathan Ray PERKINS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A TRANSISTOR GATE WITH SUB-PHOTOLITHOGRAPHIC D...
- Publication number 20090111253
- Publication date Apr 30, 2009
- Nathan Ray Perkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar transistor with nonselective epitaxial base and raised extr...
- Publication number 20060006416
- Publication date Jan 12, 2006
- Nathan R. Perkins
- H01 - BASIC ELECTRIC ELEMENTS

Nathan Ray PERKINS

Person

Patents Grantslast 30 patents

Apparatus and semiconductor structure including a multilayer packag...

Semiconductor structure including a thermally conductive, electrica...

Semiconductor structure having thermal backside core

Semiconductor structure having thermal backside core

Passivation for group III-V semiconductor devices having a plated m...

Pseudomorphic high electron mobility transistor (pHEMT) comprising...

Pseudomorphic high electron mobility transistor comprising doped lo...

Method for producing a transistor gate with sub-photolithographic d...

Method for producing a transistor gate with sub-photolithographic d...

Patents Applicationslast 30 patents

Semiconductor Structure Having Thermal Backside Core

Semiconductor Structure Including a Thermally Conductive, Electrica...

Semiconductor Structure Having Thermal Backside Core

Apparatus and Semiconductor Structure including a Multilayer Packag...

Passivation for Group III-V Semiconductor Devices Having a Plated M...

PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR COMPRISING DOPED LO...

PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR (pHEMT) COMPRISING...

METHOD FOR PRODUCING A TRANSISTOR GATE WITH SUB-PHOTOLITHOGRAPHIC D...

METHOD FOR PRODUCING A TRANSISTOR GATE WITH SUB-PHOTOLITHOGRAPHIC D...

Bipolar transistor with nonselective epitaxial base and raised extr...