Nathaniel C. BERLINER

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with improved field layer
- Patent number 10,566,416
- Issue date Feb 18, 2020
- Microsemi Corporation
- Amaury Gendron-Hansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal doping for FinFET devices
- Patent number 9,105,559
- Issue date Aug 11, 2015
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Creating extremely thin semiconductor-on-insulator (ETSOI) having s...
- Patent number 9,018,024
- Issue date Apr 28, 2015
- International Business Machines Corporation
- Nathaniel C. Berliner
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of creating an extremely thin semiconductor-on-insulator (ET...
- Patent number 8,940,554
- Issue date Jan 27, 2015
- International Business Machines Corporation
- Nathaniel C. Berliner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Raised silicide contact
- Patent number 8,927,422
- Issue date Jan 6, 2015
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to enable compressively strained pFET channel in a FinFET st...
- Patent number 8,900,973
- Issue date Dec 2, 2014
- International Business Machines Corporation
- Nathaniel C. Berliner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal fill and dual threshold voltage for replacement gate met...
- Patent number 8,796,128
- Issue date Aug 5, 2014
- International Business Machines Corporation
- Lisa F. Edge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of creating an extremely thin semiconductor-on-insulator (ET...
- Patent number 8,124,427
- Issue date Feb 28, 2012
- International Business Machines Corporation
- Nathaniel C. Berliner
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device with improved field layer
- Publication number 20190058032
- Publication date Feb 21, 2019
- MICROSEMI CORPORATION
- Amaury Gendron-Hansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFORMAL DOPING FOR FINFET DEVICES
- Publication number 20150079773
- Publication date Mar 19, 2015
- GLOBALFOUNDRIES INC.
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL FILL AND DUAL THRESHOLD VOLTAGE FOR REPLACEMENT GATE MET...
- Publication number 20140084382
- Publication date Mar 27, 2014
- International Business Machines Corporation
- Nathaniel Berliner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RAISED SILICIDE CONTACT
- Publication number 20130334693
- Publication date Dec 19, 2013
- International Business Machines Corporation
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL FILL AND DUAL THRESHOLD VOLTAGE FOR REPLACEMENT GATE MET...
- Publication number 20130200467
- Publication date Aug 8, 2013
- International Business Machines Corporation
- Lisa F. Edge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO ENABLE COMPRESSIVELY STRAINED PFET CHANNEL IN A FINFET ST...
- Publication number 20130052801
- Publication date Feb 28, 2013
- International Business Machines Corporation
- Nathaniel C. Berliner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CREATING AN EXTREMELY THIN SEMICONDUCTOR-ON-INSULATOR (ET...
- Publication number 20120125538
- Publication date May 24, 2012
- International Business Machines Corporation
- Nathaniel C. BERLINER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CREATING AN EXTREMELY THIN SEMICONDUCTOR-ON- INSULATOR (E...
- Publication number 20110097824
- Publication date Apr 28, 2011
- International Business Machines Corporation
- Nathaniel C. BERLINER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CREATING EXTREMELY THIN SEMICONDUCTOR-ON-INSULATOR (ETSOI) HAVING S...
- Publication number 20110095393
- Publication date Apr 28, 2011
- International Business Machines Corporation
- Nathaniel C. Berliner
- H01 - BASIC ELECTRIC ELEMENTS

Nathaniel C. BERLINER

Person

Patents Grantslast 30 patents

Semiconductor device with improved field layer

Conformal doping for FinFET devices

Creating extremely thin semiconductor-on-insulator (ETSOI) having s...

Method of creating an extremely thin semiconductor-on-insulator (ET...

Raised silicide contact

Method to enable compressively strained pFET channel in a FinFET st...

Dual metal fill and dual threshold voltage for replacement gate met...

Method of creating an extremely thin semiconductor-on-insulator (ET...

Patents Applicationslast 30 patents

Semiconductor device with improved field layer

CONFORMAL DOPING FOR FINFET DEVICES

DUAL METAL FILL AND DUAL THRESHOLD VOLTAGE FOR REPLACEMENT GATE MET...

RAISED SILICIDE CONTACT

DUAL METAL FILL AND DUAL THRESHOLD VOLTAGE FOR REPLACEMENT GATE MET...

METHOD TO ENABLE COMPRESSIVELY STRAINED PFET CHANNEL IN A FINFET ST...

METHOD OF CREATING AN EXTREMELY THIN SEMICONDUCTOR-ON-INSULATOR (ET...

METHOD OF CREATING AN EXTREMELY THIN SEMICONDUCTOR-ON- INSULATOR (E...

CREATING EXTREMELY THIN SEMICONDUCTOR-ON-INSULATOR (ETSOI) HAVING S...