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Nawoto Motegi
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Kanagawa, JP
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last 30 patents
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Patent Grant
P-type II-VI compound semiconductor doped
Patent number
5,150,191
Issue date
Sep 22, 1992
Kabushiki Kaisha Toshiba
Nawoto Motegi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Transverse-mode oscillation semiconductor laser device
Patent number
5,065,404
Issue date
Nov 12, 1991
Kabushiki Kaisha Toshiba
Masaki Okajima
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor laser device
Patent number
4,974,233
Issue date
Nov 27, 1990
Kabushiki Kaisha Toshiba
Nobuo Suzuki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor laser device
Patent number
4,858,241
Issue date
Aug 15, 1989
Kabushiki Kaisha Toshiba
Nobuo Suzuki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor laser device having current confining and built-in wa...
Patent number
4,691,321
Issue date
Sep 1, 1987
Kabushiki Kaisha Toshiba
Nawoto Motegi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor laser device and method for manufacturing the same
Patent number
4,647,953
Issue date
Mar 3, 1987
Tokyo Shibaura Denki Kabushiki Kaisha
Masaki Okajima
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Dry etching method of compound semiconductor
Patent number
4,640,737
Issue date
Feb 3, 1987
Kabushiki Kaisha Toshiba
Hiroko Nagasaka
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor laser device having a double heterojunction structure
Patent number
4,635,268
Issue date
Jan 6, 1987
Kabushiki Kaisha Toshiba
Nawoto Motegi
H01 - BASIC ELECTRIC ELEMENTS