Nerissa Sue Draeger

Person

Milpitas, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Selective atomic layer etching
- Patent number 10,847,375
- Issue date Nov 24, 2020
- Lam Research Corporation
- Chia-Chun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer etching of metal oxide
- Patent number 10,354,887
- Issue date Jul 16, 2019
- Lam Research Corporation
- Andreas Fischer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for selectively sealing ultra low-k porous dielectric layer...
- Patent number 10,049,921
- Issue date Aug 14, 2018
- Lam Research Corporation
- Nerissa Sue Draeger
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Interface engineering during MGO deposition for magnetic tunnel jun...
- Patent number 9,988,715
- Issue date Jun 5, 2018
- Lam Research Corporation
- Katie Lynn Nardi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Treatment for flowable dielectric deposition on substrate surfaces
- Patent number 9,847,222
- Issue date Dec 19, 2017
- Lam Research Corporation
- Patrick Reilly
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Dielectric repair for emerging memory devices
- Patent number 9,627,608
- Issue date Apr 18, 2017
- Lam Research Corporation
- Nerissa Draeger
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Flowable oxide film with tunable wet etch rate
- Patent number 9,299,559
- Issue date Mar 29, 2016
- Novellus Systems, Inc.
- Nerissa Draeger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CVD flowable gap fill
- Patent number 9,257,302
- Issue date Feb 9, 2016
- Novellus Systems, Inc.
- Feng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-K oxide deposition by hydrolysis and condensation
- Patent number 9,245,739
- Issue date Jan 26, 2016
- Lam Research Corporation
- Nicholas Muga Ndiege
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flowable oxide deposition using rapid delivery of process gases
- Patent number 9,064,684
- Issue date Jun 23, 2015
- Novellus Systems, Inc.
- Collin K. L. Mui
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...
Information Patent Grant
Flowable oxide film with tunable wet etch rate
- Patent number 8,846,536
- Issue date Sep 30, 2014
- Novellus Systems, Inc.
- Nerissa Draeger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gap fill integration
- Patent number 8,728,958
- Issue date May 20, 2014
- Novellus Systems, Inc.
- Kaihan Ashtiani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Premetal dielectric integration process
- Patent number 8,685,867
- Issue date Apr 1, 2014
- Novellus Systems, Inc.
- Michal Danek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective capping of copper
- Patent number 8,278,216
- Issue date Oct 2, 2012
- Novellus Systems, Inc.
- Glenn Alers
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Flowable oxide deposition using rapid delivery of process gases
- Patent number 8,278,224
- Issue date Oct 2, 2012
- Novellus Systems, Inc.
- Collin K. L. Mui
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...
Information Patent Grant
CVD flowable gap fill
- Patent number 8,187,951
- Issue date May 29, 2012
- Novellus Systems, Inc.
- Feng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Creation of porosity in low-k films by photo-disassociation of imbe...
- Patent number 8,062,983
- Issue date Nov 22, 2011
- Novellus Systems, Inc.
- Nerissa S. Draeger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer removal process with higher etch amount
- Patent number 8,058,179
- Issue date Nov 15, 2011
- Novellus Systems, Inc.
- Nerissa Draeger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
VLSI fabrication processes for introducing pores into dielectric ma...
- Patent number 7,972,976
- Issue date Jul 5, 2011
- Novellus Systems, Inc.
- Willibrordus Gerardus Maria van den Hoek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
VLSI fabrication processes for introducing pores into dielectric ma...
- Patent number 7,629,224
- Issue date Dec 8, 2009
- Novellus Systems, Inc.
- Willibrordus Gerardus Maria van den Hoek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CVD flowable gap fill
- Patent number 7,629,227
- Issue date Dec 8, 2009
- Novellus Systems, Inc.
- Feng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Creation of porosity in low-k films by photo-disassociation of imbe...
- Patent number 7,510,982
- Issue date Mar 31, 2009
- Novellus Systems, Inc.
- Nerissa S. Draeger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
VLSI fabrication processes for introducing pores into dielectric ma...
- Patent number 7,166,531
- Issue date Jan 23, 2007
- Novellus Systems, Inc.
- Willibrordus Gerardus Maria van den Hoek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preventing and cleaning ruthenium-containing deposits in...
- Patent number 7,107,998
- Issue date Sep 19, 2006
- Novellus Systems, Inc.
- Harold F. R. Greer
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
SELECTIVE ATOMIC LAYER ETCHING
- Publication number 20190393046
- Publication date Dec 26, 2019
- LAM RESEARCH CORPORATION
- Chia-Chun WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER ETCHING OF METAL OXIDE
- Publication number 20190096690
- Publication date Mar 28, 2019
- LAM RESEARCH CORPORATION
- Andreas FISCHER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACE ENGINEERING DURING MGO DEPOSITION FOR MAGNETIC TUNNEL JUN...
- Publication number 20170130330
- Publication date May 11, 2017
- LAM RESEARCH CORPORATION
- Katie Lynn Nardi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
DIELECTRIC REPAIR FOR EMERGING MEMORY DEVICES
- Publication number 20160079521
- Publication date Mar 17, 2016
- LAM RESEARCH CORPORATION
- Nerissa Draeger
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FLOWABLE DIELECTRIC FOR SELECTIVE ULTRA LOW-K PORE SEALING
- Publication number 20160056071
- Publication date Feb 25, 2016
- LAM RESEARCH CORPORATION
- Nerissa Sue Draeger
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
COVERAGE OF HIGH ASPECT RATIO FEATURES USING SPIN-ON DIELECTRIC THR...
- Publication number 20160042945
- Publication date Feb 11, 2016
- LAM RESEARCH CORPORATION
- Ratchana Limary
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TREATMENT FOR FLOWABLE DIELECTRIC DEPOSITION ON SUBSTRATE SURFACES
- Publication number 20150118862
- Publication date Apr 30, 2015
- LAM RESEARCH CORPORATION
- Patrick Reilly
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS AND APPARATUS FOR FORMING FLOWABLE DIELECTRIC FILMS HAVING...
- Publication number 20150118863
- Publication date Apr 30, 2015
- LAM RESEARCH CORPORATION
- Megha Rathod
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ATOMIC LAYER REMOVAL PROCESS WITH HIGHER ETCH AMOUNT
- Publication number 20150118848
- Publication date Apr 30, 2015
- Novellus System, Inc.
- Nerissa Draeger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOWABLE OXIDE FILM WITH TUNABLE WET ETCH RATE
- Publication number 20150044882
- Publication date Feb 12, 2015
- Novellus Systems, Inc.
- Nerissa Draeger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-K OXIDE DEPOSITION BY HYDROLYSIS AND CONDENSATION
- Publication number 20150004806
- Publication date Jan 1, 2015
- LAM RESEARCH CORPORATION
- Nicholas Muga Ndiege
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR DIELECTRIC DEPOSITION
- Publication number 20140302689
- Publication date Oct 9, 2014
- Novellus Systems, Inc.
- Kaihan Ashtiani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOWABLE OXIDE FILM WITH TUNABLE WET ETCH RATE
- Publication number 20130230987
- Publication date Sep 5, 2013
- Nerissa Draeger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOTTOM UP FILL IN HIGH ASPECT RATIO TRENCHES
- Publication number 20120149213
- Publication date Jun 14, 2012
- Lakshminarayana Nittala
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
NOVEL GAP FILL INTEGRATION
- Publication number 20110151678
- Publication date Jun 23, 2011
- Kaihan Ashtiani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for preventing and cleaning ruthenium-containing deposits in...
- Publication number 20050081882
- Publication date Apr 21, 2005
- Novellus Systems, Inc.
- Harold F.R. Greer
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Nerissa Sue Draeger

Person

Patents Grantslast 30 patents

Selective atomic layer etching

Atomic layer etching of metal oxide

Method for selectively sealing ultra low-k porous dielectric layer...

Interface engineering during MGO deposition for magnetic tunnel jun...

Treatment for flowable dielectric deposition on substrate surfaces

Dielectric repair for emerging memory devices

Flowable oxide film with tunable wet etch rate

CVD flowable gap fill

Low-K oxide deposition by hydrolysis and condensation

Flowable oxide deposition using rapid delivery of process gases

Flowable oxide film with tunable wet etch rate

Gap fill integration

Premetal dielectric integration process

Selective capping of copper

Flowable oxide deposition using rapid delivery of process gases

CVD flowable gap fill

Creation of porosity in low-k films by photo-disassociation of imbe...

Atomic layer removal process with higher etch amount

VLSI fabrication processes for introducing pores into dielectric ma...

VLSI fabrication processes for introducing pores into dielectric ma...

CVD flowable gap fill

Creation of porosity in low-k films by photo-disassociation of imbe...

VLSI fabrication processes for introducing pores into dielectric ma...

Method for preventing and cleaning ruthenium-containing deposits in...

Patents Applicationslast 30 patents

SELECTIVE ATOMIC LAYER ETCHING

ATOMIC LAYER ETCHING OF METAL OXIDE

INTERFACE ENGINEERING DURING MGO DEPOSITION FOR MAGNETIC TUNNEL JUN...

DIELECTRIC REPAIR FOR EMERGING MEMORY DEVICES

FLOWABLE DIELECTRIC FOR SELECTIVE ULTRA LOW-K PORE SEALING

COVERAGE OF HIGH ASPECT RATIO FEATURES USING SPIN-ON DIELECTRIC THR...

TREATMENT FOR FLOWABLE DIELECTRIC DEPOSITION ON SUBSTRATE SURFACES

METHODS AND APPARATUS FOR FORMING FLOWABLE DIELECTRIC FILMS HAVING...

ATOMIC LAYER REMOVAL PROCESS WITH HIGHER ETCH AMOUNT

FLOWABLE OXIDE FILM WITH TUNABLE WET ETCH RATE

LOW-K OXIDE DEPOSITION BY HYDROLYSIS AND CONDENSATION

METHODS AND APPARATUS FOR DIELECTRIC DEPOSITION

FLOWABLE OXIDE FILM WITH TUNABLE WET ETCH RATE

BOTTOM UP FILL IN HIGH ASPECT RATIO TRENCHES

NOVEL GAP FILL INTEGRATION

Method for preventing and cleaning ruthenium-containing deposits in...