Nestor A. Bojarczuk, JR.

Person

Poughkeepsie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Selective implementation of barrier layers to achieve threshold vol...
- Patent number 8,193,051
- Issue date Jun 5, 2012
- International Business Machines Corporation
- Nestor A. Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective implementation of barrier layers to achieve threshold vol...
- Patent number 7,928,514
- Issue date Apr 19, 2011
- International Business Machines Corporation
- Nestor A. Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including mixed rare earth oxide formed on...
- Patent number 7,923,743
- Issue date Apr 12, 2011
- International Business Machines Corporation
- Nestor Alexander Bojarczuk, Jr.
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Selective implementation of barrier layers to achieve threshold vol...
- Patent number 7,745,278
- Issue date Jun 29, 2010
- International Business Machines Corporation
- Nestor A. Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including mixed rare earth oxide formed on...
- Patent number 7,648,864
- Issue date Jan 19, 2010
- International Business Machines Corporation
- Nestor Alexander Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum nitride and aluminum oxide/aluminum nitride heterostructur...
- Patent number 7,488,640
- Issue date Feb 10, 2009
- International Business Machines Corporation
- Nestor A. Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective implementation of barrier layers to achieve threshold vol...
- Patent number 7,479,683
- Issue date Jan 20, 2009
- International Business Machines Corporation
- Nestor A. Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective implementation of barrier layers to achieve threshold vol...
- Patent number 7,452,767
- Issue date Nov 18, 2008
- International Business Machines Corporation
- Nestor A. Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stabilization of flatband voltages and threshold voltages in hafniu...
- Patent number 7,446,380
- Issue date Nov 4, 2008
- International Business Machines Corporation
- Nestor A. Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including mixed rare earth oxide formed on...
- Patent number 7,432,550
- Issue date Oct 7, 2008
- International Business Machines Corporation
- Nestor Alexander Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming lattice-matched structure on silicon and structur...
- Patent number 7,348,226
- Issue date Mar 25, 2008
- International Business Machines Corporation
- Nestor Alexander Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogen-containing field effect transistor gate stack containing a...
- Patent number 7,242,055
- Issue date Jul 10, 2007
- International Business Machines Corporation
- Nestor A. Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal oxide semiconductor (CMOS) gate stack with high...
- Patent number 7,169,674
- Issue date Jan 30, 2007
- International Business Machines Corporation
- Nestor Alexander Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective implementation of barrier layers to achieve threshold vol...
- Patent number 7,105,889
- Issue date Sep 12, 2006
- International Business Machines Corporation
- Nestor A. Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rare earth metal oxide memory element based on charge storage and m...
- Patent number 7,078,301
- Issue date Jul 18, 2006
- International Business Machines Corporation
- Nestor A. Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming lattice-matched structure on silicon and structur...
- Patent number 6,933,566
- Issue date Aug 23, 2005
- International Business Machines Corporation
- Nestor Alexander Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rare earth metal oxide memory element based on charge storage and m...
- Patent number 6,894,338
- Issue date May 17, 2005
- International Business Machines Corporation
- Nestor A. Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal oxide semiconductor (CMOS) gate stack with high...
- Patent number 6,891,231
- Issue date May 10, 2005
- International Business Machines Corporation
- Nestor Alexander Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric stack without interfacial layer
- Patent number 6,861,728
- Issue date Mar 1, 2005
- International Business Machines Corporation
- Nestor A. Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming lattice-matched structure on silicon and structur...
- Patent number 6,852,575
- Issue date Feb 8, 2005
- International Business Machines Corporation
- Nestor Alexander Bojarczuk, Jr.
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELECTIVE IMPLEMENTATION OF BARRIER LAYERS TO ACHIEVE THRESHOLD VOL...
- Publication number 20110165767
- Publication date Jul 7, 2011
- International Business Machines Corporation
- Nestor A. Bojarczuk, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING MIXED RARE EARTH OXIDE FORMED ON...
- Publication number 20100065815
- Publication date Mar 18, 2010
- International Business Machines Corporation
- Nestor Alexander Bojarczuk, JR.
- B82 - NANO-TECHNOLOGY
Information Patent Application
SELECTIVE IMPLEMENTATION OF BARRIER LAYERS TO ACHIEVE THRESHOLD VOL...
- Publication number 20090152642
- Publication date Jun 18, 2009
- International Business Machines Corporation
- Nestor A. Bojarczuk, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE IMPLEMENTATION OF BARRIER LAYERS TO ACHIEVE TRESHOLD VOLT...
- Publication number 20090011610
- Publication date Jan 8, 2009
- International Business Machines Corporation
- Nestor A. Bojarczuk, JR.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING MIXED RARE EARTH OXIDE FORMED ON...
- Publication number 20080308831
- Publication date Dec 18, 2008
- International Business Machines Corporation
- Nestor Alexander Bojarczuk, JR.
- B82 - NANO-TECHNOLOGY

Nestor A. Bojarczuk, JR.

Person

Patents Grantslast 30 patents

Selective implementation of barrier layers to achieve threshold vol...

Selective implementation of barrier layers to achieve threshold vol...

Semiconductor structure including mixed rare earth oxide formed on...

Selective implementation of barrier layers to achieve threshold vol...

Semiconductor structure including mixed rare earth oxide formed on...

Aluminum nitride and aluminum oxide/aluminum nitride heterostructur...

Selective implementation of barrier layers to achieve threshold vol...

Selective implementation of barrier layers to achieve threshold vol...

Stabilization of flatband voltages and threshold voltages in hafniu...

Semiconductor structure including mixed rare earth oxide formed on...

Method of forming lattice-matched structure on silicon and structur...

Nitrogen-containing field effect transistor gate stack containing a...

Complementary metal oxide semiconductor (CMOS) gate stack with high...

Selective implementation of barrier layers to achieve threshold vol...

Rare earth metal oxide memory element based on charge storage and m...

Method of forming lattice-matched structure on silicon and structur...

Rare earth metal oxide memory element based on charge storage and m...

Complementary metal oxide semiconductor (CMOS) gate stack with high...

Dielectric stack without interfacial layer

Method of forming lattice-matched structure on silicon and structur...

Patents Applicationslast 30 patents

SELECTIVE IMPLEMENTATION OF BARRIER LAYERS TO ACHIEVE THRESHOLD VOL...

SEMICONDUCTOR STRUCTURE INCLUDING MIXED RARE EARTH OXIDE FORMED ON...

SELECTIVE IMPLEMENTATION OF BARRIER LAYERS TO ACHIEVE THRESHOLD VOL...

SELECTIVE IMPLEMENTATION OF BARRIER LAYERS TO ACHIEVE TRESHOLD VOLT...

SEMICONDUCTOR STRUCTURE INCLUDING MIXED RARE EARTH OXIDE FORMED ON...