Neville DIAS

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Dual threshold voltage (VT) channel devices and their methods of fa...
- Patent number 11,967,615
- Issue date Apr 23, 2024
- Intel Corporation
- Hsu-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi voltage threshold transistors through process and design-indu...
- Patent number 11,121,040
- Issue date Sep 14, 2021
- Intel Corporation
- Chen-Guan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid finfet structure with bulk source/drain regions
- Patent number 11,075,286
- Issue date Jul 27, 2021
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistor between gates in self-aligned gate edge architecture
- Patent number 10,964,690
- Issue date Mar 30, 2021
- Intel Corporation
- Roman W. Olac-Vaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based thin film resistor
- Patent number 10,930,729
- Issue date Feb 23, 2021
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation well doping with solid-state diffusion sources for finFET...
- Patent number 10,854,607
- Issue date Dec 1, 2020
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FINFET based junctionless wrap around structure
- Patent number 10,854,757
- Issue date Dec 1, 2020
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic splitter using re-entrant poly silicon waveguides
- Patent number 10,811,751
- Issue date Oct 20, 2020
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS antifuse with void-accelerated breakdown
- Patent number 10,763,209
- Issue date Sep 1, 2020
- Intel Corporation
- Roman Olac-Vaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transmission lines using bending fins from local stress
- Patent number 10,761,264
- Issue date Sep 1, 2020
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depletion mode gate in ultrathin FINFET based architecture
- Patent number 10,756,210
- Issue date Aug 25, 2020
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping with solid-state diffusion sources for finFET architectures
- Patent number 10,643,999
- Issue date May 5, 2020
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping with solid-state diffusion sources for finFET architectures
- Patent number 10,340,273
- Issue date Jul 2, 2019
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate metal with laterally graduated work function
- Patent number 10,192,969
- Issue date Jan 29, 2019
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-linear fin-based devices
- Patent number 10,164,115
- Issue date Dec 25, 2018
- Intel Corporation
- Neville L. Dias
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Isolation well doping with solid-state diffusion sources for FinFET...
- Patent number 10,090,304
- Issue date Oct 2, 2018
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate transistor with variably sized fin
- Patent number 9,947,585
- Issue date Apr 17, 2018
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ISOLATION WELL DOPING WITH SOLID-STATE DIFFUSION SOURCES FOR FINFET...
- Publication number 20200251471
- Publication date Aug 6, 2020
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPLETION MODE GATE IN ULTRATHIN FINFET BASED ARCHITECTURE
- Publication number 20200066907
- Publication date Feb 27, 2020
- Intel Corporation
- Chia-Hong JAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTOR BETWEEN GATES IN SELF-ALIGNED GATE EDGE ARCHITECTURE
- Publication number 20200043914
- Publication date Feb 6, 2020
- Intel Corporation
- ROMAN W. OLAC-VAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC SPLITTER USING RE-ENTRANT POLY SILICON WAVEGUIDES
- Publication number 20190356032
- Publication date Nov 21, 2019
- Intel Corporation
- Rahul RAMASWAMY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI VOLTAGE THRESHOLD TRANSISTORS THROUGH PROCESS AND DESIGN-INDU...
- Publication number 20190304840
- Publication date Oct 3, 2019
- Intel Corporation
- Chen-Guan LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPING WITH SOLID-STATE DIFFUSION SOURCES FOR FINFET ARCHITECTURES
- Publication number 20190287973
- Publication date Sep 19, 2019
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSMISSION LINES USING BENDING FINS FROM LOCAL STRESS
- Publication number 20190278022
- Publication date Sep 12, 2019
- Intel Corporation
- Rahul RAMASWAMY
- G02 - OPTICS
Information Patent Application
FINFET BASED JUNCTIONLESS WRAP AROUND STRUCTURE
- Publication number 20190245098
- Publication date Aug 8, 2019
- Rahul RAMASWAMY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID FINFET STRUCTURE WITH BULK SOURCE/DRAIN REGIONS
- Publication number 20190237564
- Publication date Aug 1, 2019
- Intel Corporation
- Chia-Hong JAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-BASED THIN FILM RESISTOR
- Publication number 20190206980
- Publication date Jul 4, 2019
- Intel Corporation
- Chia-Hong JAN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
NON-LINEAR FIN-BASED DEVICES
- Publication number 20190097057
- Publication date Mar 28, 2019
- Intel Corporation
- NEVILLE L. DIAS
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
DUAL THRESHOLD VOLTAGE (VT) CHANNEL DEVICES AND THEIR METHODS OF FA...
- Publication number 20180323260
- Publication date Nov 8, 2018
- Intel Corporation
- Hsu-Yu CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE METAL WITH LATERALLY GRADUATED WORK FUNCTION
- Publication number 20170207312
- Publication date Jul 20, 2017
- Intel Corporation
- Chia-Hong JAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS ANTIFUSE WITH VOID-ACCELERATED BREAKDOWN
- Publication number 20170162503
- Publication date Jun 8, 2017
- Intel Corporation
- Roman OLAC-VAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPING WITH SOLID-STATE DIFFUSION SOURCES FOR FINFET ARCHITECTURES
- Publication number 20170125419
- Publication date May 4, 2017
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE TRANSISTOR WITH VARIABLY SIZED FIN
- Publication number 20170103923
- Publication date Apr 13, 2017
- Intel Corporation
- NIDHI NIDHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-LINEAR FIN-BASED DEVICES
- Publication number 20170098709
- Publication date Apr 6, 2017
- Intel Corporation
- NEVILLE L. DIAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION WELL DOPING WITH SOLID-STATE DIFFUSION SOURCES FOR FINFET...
- Publication number 20160211262
- Publication date Jul 21, 2016
- CHIA-HONG JAN
- H01 - BASIC ELECTRIC ELEMENTS

Neville DIAS

Person

Patents Grantslast 30 patents

Dual threshold voltage (VT) channel devices and their methods of fa...

Multi voltage threshold transistors through process and design-indu...

Hybrid finfet structure with bulk source/drain regions

Resistor between gates in self-aligned gate edge architecture

Fin-based thin film resistor

Isolation well doping with solid-state diffusion sources for finFET...

FINFET based junctionless wrap around structure

Monolithic splitter using re-entrant poly silicon waveguides

MOS antifuse with void-accelerated breakdown

Transmission lines using bending fins from local stress

Depletion mode gate in ultrathin FINFET based architecture

Doping with solid-state diffusion sources for finFET architectures

Doping with solid-state diffusion sources for finFET architectures

Transistor gate metal with laterally graduated work function

Non-linear fin-based devices

Isolation well doping with solid-state diffusion sources for FinFET...

Multi-gate transistor with variably sized fin

Patents Applicationslast 30 patents

ISOLATION WELL DOPING WITH SOLID-STATE DIFFUSION SOURCES FOR FINFET...

DEPLETION MODE GATE IN ULTRATHIN FINFET BASED ARCHITECTURE

RESISTOR BETWEEN GATES IN SELF-ALIGNED GATE EDGE ARCHITECTURE

MONOLITHIC SPLITTER USING RE-ENTRANT POLY SILICON WAVEGUIDES

MULTI VOLTAGE THRESHOLD TRANSISTORS THROUGH PROCESS AND DESIGN-INDU...

DOPING WITH SOLID-STATE DIFFUSION SOURCES FOR FINFET ARCHITECTURES

TRANSMISSION LINES USING BENDING FINS FROM LOCAL STRESS

FINFET BASED JUNCTIONLESS WRAP AROUND STRUCTURE

HYBRID FINFET STRUCTURE WITH BULK SOURCE/DRAIN REGIONS

FIN-BASED THIN FILM RESISTOR

NON-LINEAR FIN-BASED DEVICES

DUAL THRESHOLD VOLTAGE (VT) CHANNEL DEVICES AND THEIR METHODS OF FA...

TRANSISTOR GATE METAL WITH LATERALLY GRADUATED WORK FUNCTION

MOS ANTIFUSE WITH VOID-ACCELERATED BREAKDOWN

DOPING WITH SOLID-STATE DIFFUSION SOURCES FOR FINFET ARCHITECTURES

MULTI-GATE TRANSISTOR WITH VARIABLY SIZED FIN

NON-LINEAR FIN-BASED DEVICES

ISOLATION WELL DOPING WITH SOLID-STATE DIFFUSION SOURCES FOR FINFET...