Nicholas G. MINUTILLO

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Arsenic-doped epitaxial source/drain regions for NMOS
- Patent number 12,094,881
- Issue date Sep 17, 2024
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source or drain structures with vertical trenches
- Patent number 11,935,887
- Issue date Mar 19, 2024
- Intel Corporation
- Ryan Keech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with isolation below source and drain
- Patent number 11,923,410
- Issue date Mar 5, 2024
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High aspect ratio source or drain structures with abrupt dopant pro...
- Patent number 11,804,523
- Issue date Oct 31, 2023
- Intel Corporation
- Ryan Keech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source-channel junction for III-V metal-oxide-semiconductor field e...
- Patent number 11,756,998
- Issue date Sep 12, 2023
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel layer formation for III-V metal-oxide-semiconductor field e...
- Patent number 11,695,081
- Issue date Jul 4, 2023
- Intel Corporation
- Sean Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Arsenic-doped epitaxial, source/drain regions for NMOS
- Patent number 11,610,889
- Issue date Mar 21, 2023
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with high density channel semiconductor over dielectric...
- Patent number 11,557,658
- Issue date Jan 17, 2023
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source or drain structures with phosphorous and arsenic co-dopants
- Patent number 11,552,169
- Issue date Jan 10, 2023
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel layer formation for III-V metal-oxide-semiconductor field e...
- Patent number 11,508,577
- Issue date Nov 22, 2022
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar semiconductor device including a replacement channel str...
- Patent number 11,355,621
- Issue date Jun 7, 2022
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structure with indium phosphide channel
- Patent number 11,276,694
- Issue date Mar 15, 2022
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source-channel junction for III-V metal-oxide-semiconductor field e...
- Patent number 11,257,904
- Issue date Feb 22, 2022
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with isolation below source and drain
- Patent number 11,171,207
- Issue date Nov 9, 2021
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V semiconductor devices having asymmetric source and drai...
- Patent number 11,164,747
- Issue date Nov 2, 2021
- Intel Corporation
- Sean T. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel layer formed in an art trench
- Patent number 11,164,974
- Issue date Nov 2, 2021
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Art trench spacers to enable fin release for non-lattice matched ch...
- Patent number 11,049,773
- Issue date Jun 29, 2021
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SOURCE OR DRAIN STRUCTURES WITH VERTICAL TRENCHES
- Publication number 20240170484
- Publication date May 23, 2024
- Intel Corporation
- Ryan KEECH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN
- Publication number 20240113161
- Publication date Apr 4, 2024
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ASPECT RATIO SOURCE OR DRAIN STRUCTURES WITH ABRUPT DOPANT PRO...
- Publication number 20240014268
- Publication date Jan 11, 2024
- Intel Corporation
- Ryan KEECH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH DOPED INTRINSIC GERMANIUM CAPS ON SOURCE DRAIN REG...
- Publication number 20230207560
- Publication date Jun 29, 2023
- Intel Corporation
- Cory C. Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES TO ENABLE LOWER SUBTHRESHOLD SLOPE IN GALLIUM NITRI...
- Publication number 20230197840
- Publication date Jun 22, 2023
- Intel Corporation
- Sanyam Bajaj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARSENIC-DOPED EPITAXIAL SOURCE/DRAIN REGIONS FOR NMOS
- Publication number 20230197729
- Publication date Jun 22, 2023
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRE-FLOW OF P-TYPE DOPANT PRECURSOR TO ENABLE THINNER P-GAN LAYERS...
- Publication number 20230132548
- Publication date May 4, 2023
- Intel Corporation
- Atsunori Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
pGaN ENHANCEMENT MODE HEMTs WITH DOPANT DIFFUSION SPACER
- Publication number 20220199816
- Publication date Jun 23, 2022
- Intel Corporation
- Michael Beumer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE-CHANNEL JUNCTION FOR III-V METAL-OXIDE-SEMICONDUCTOR FIELD E...
- Publication number 20220140076
- Publication date May 5, 2022
- Intel Corporation
- Cheng-Ying HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN
- Publication number 20220028972
- Publication date Jan 27, 2022
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ASPECT RATION SOURCE OR DRAIN STRUCTURES WITH ABRUPT DOPANT PR...
- Publication number 20210091181
- Publication date Mar 25, 2021
- Intel Corporation
- Ryan KEECH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES WITH VERTICAL TRENCHES
- Publication number 20200312842
- Publication date Oct 1, 2020
- Intel Corporation
- Ryan KEECH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES WITH PHOSPHOROUS AND ARSENIC CO-DOPANTS
- Publication number 20200312958
- Publication date Oct 1, 2020
- Intel Corporation
- Anand MURTHY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH HIGH DENSITY CHANNEL SEMICONDUCTOR OVER DIELECTRIC...
- Publication number 20200287024
- Publication date Sep 10, 2020
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN
- Publication number 20200279916
- Publication date Sep 3, 2020
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR SEMICONDUCTOR DEVICE INCLUDING A REPLACEMENT CHANNEL STR...
- Publication number 20200227539
- Publication date Jul 16, 2020
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPROVED CHANNEL LAYER FORMED IN AN ART TRENCH
- Publication number 20200220017
- Publication date Jul 9, 2020
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-V SEMICONDUCTOR DEVICES HAVING ASYMMETRIC SOURCE AND DRAI...
- Publication number 20200203169
- Publication date Jun 25, 2020
- Intel Corporation
- Sean T. MA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARSENIC-DOPED EPITAXIAL SOURCE/DRAIN REGIONS FOR NMOS
- Publication number 20200105754
- Publication date Apr 2, 2020
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH INDIUM PHOSPHIDE CHANNEL
- Publication number 20200098757
- Publication date Mar 26, 2020
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC LINING LAYERS FOR SEMICONDUCTOR DEVICES
- Publication number 20200006501
- Publication date Jan 2, 2020
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL LAYER FORMATION FOR III-V METAL-OXIDE-SEMICONDUCTOR FIELD E...
- Publication number 20200006576
- Publication date Jan 2, 2020
- Intel Corporation
- Sean MA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL LAYER FOR III-V METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRAN...
- Publication number 20200006523
- Publication date Jan 2, 2020
- Intel Corporation
- Matthew METZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL LAYER FORMATION FOR III-V METAL-OXIDE-SEMICONDUCTOR FIELD E...
- Publication number 20200006069
- Publication date Jan 2, 2020
- Intel Corporation
- Gilbert DEWEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE-CHANNEL JUNCTION FOR III-V METAL-OXIDE-SEMICONDUCTOR FIELD E...
- Publication number 20200006480
- Publication date Jan 2, 2020
- Cheng-Ying HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ART TRENCH SPACERS TO ENABLE FIN RELEASE FOR NON-LATTICE MATCHED CH...
- Publication number 20190267289
- Publication date Aug 29, 2019
- Intel Corporation
- Gilbert DEWEY
- H01 - BASIC ELECTRIC ELEMENTS

Nicholas G. MINUTILLO

Person

Patents Grantslast 30 patents

Arsenic-doped epitaxial source/drain regions for NMOS

Source or drain structures with vertical trenches

Transistor with isolation below source and drain

High aspect ratio source or drain structures with abrupt dopant pro...

Source-channel junction for III-V metal-oxide-semiconductor field e...

Channel layer formation for III-V metal-oxide-semiconductor field e...

Arsenic-doped epitaxial, source/drain regions for NMOS

Transistors with high density channel semiconductor over dielectric...

Source or drain structures with phosphorous and arsenic co-dopants

Channel layer formation for III-V metal-oxide-semiconductor field e...

Non-planar semiconductor device including a replacement channel str...

Transistor structure with indium phosphide channel

Source-channel junction for III-V metal-oxide-semiconductor field e...

Transistor with isolation below source and drain

Group III-V semiconductor devices having asymmetric source and drai...

Channel layer formed in an art trench

Art trench spacers to enable fin release for non-lattice matched ch...

Patents Applicationslast 30 patents

SOURCE OR DRAIN STRUCTURES WITH VERTICAL TRENCHES

TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN

HIGH ASPECT RATIO SOURCE OR DRAIN STRUCTURES WITH ABRUPT DOPANT PRO...

TRANSISTORS WITH DOPED INTRINSIC GERMANIUM CAPS ON SOURCE DRAIN REG...

GATE STRUCTURES TO ENABLE LOWER SUBTHRESHOLD SLOPE IN GALLIUM NITRI...

ARSENIC-DOPED EPITAXIAL SOURCE/DRAIN REGIONS FOR NMOS

PRE-FLOW OF P-TYPE DOPANT PRECURSOR TO ENABLE THINNER P-GAN LAYERS...

pGaN ENHANCEMENT MODE HEMTs WITH DOPANT DIFFUSION SPACER

SOURCE-CHANNEL JUNCTION FOR III-V METAL-OXIDE-SEMICONDUCTOR FIELD E...

TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN

HIGH ASPECT RATION SOURCE OR DRAIN STRUCTURES WITH ABRUPT DOPANT PR...

SOURCE OR DRAIN STRUCTURES WITH VERTICAL TRENCHES

SOURCE OR DRAIN STRUCTURES WITH PHOSPHOROUS AND ARSENIC CO-DOPANTS

TRANSISTORS WITH HIGH DENSITY CHANNEL SEMICONDUCTOR OVER DIELECTRIC...

TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN

NON-PLANAR SEMICONDUCTOR DEVICE INCLUDING A REPLACEMENT CHANNEL STR...

IMPROVED CHANNEL LAYER FORMED IN AN ART TRENCH

GROUP III-V SEMICONDUCTOR DEVICES HAVING ASYMMETRIC SOURCE AND DRAI...

ARSENIC-DOPED EPITAXIAL SOURCE/DRAIN REGIONS FOR NMOS

TRANSISTOR STRUCTURE WITH INDIUM PHOSPHIDE CHANNEL

DIELECTRIC LINING LAYERS FOR SEMICONDUCTOR DEVICES

CHANNEL LAYER FORMATION FOR III-V METAL-OXIDE-SEMICONDUCTOR FIELD E...

CHANNEL LAYER FOR III-V METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRAN...

CHANNEL LAYER FORMATION FOR III-V METAL-OXIDE-SEMICONDUCTOR FIELD E...

SOURCE-CHANNEL JUNCTION FOR III-V METAL-OXIDE-SEMICONDUCTOR FIELD E...

ART TRENCH SPACERS TO ENABLE FIN RELEASE FOR NON-LATTICE MATCHED CH...